Title: Epitaxial growth of in-plane nanowires and nanowire devices

Abstract

Exemplary embodiments provide semiconductor nanowires and nanowire devices/applications and methods for their formation. In embodiments, in-plane nanowires can be epitaxially grown on a patterned substrate, which are more favorable than vertical ones for device processing and three-dimensional (3D) integrated circuits. In embodiments, the in-plane nanowire can be formed by selective epitaxy utilizing lateral overgrowth and faceting of an epilayer initially grown in a one-dimensional (1D) nanoscale opening. In embodiments, optical, electrical, and thermal connections can be established and controlled between the nanowire, the substrate, and additional electrical or optical components for better device and system performance.

Inventors:

Lee, Seung Chang; Brueck, Steven R. J.

Issue Date:

2013-10-15

Research Org.:

STC.UNM, Albuquerque, NM (United States)

Sponsoring Org.:

USDOE

OSTI Identifier:

1531879

Patent Number(s):

8557622

Application Number:

13/223,580

Assignee:

STC.UNM (Albuquerque, NM)

Patent Classifications (CPCs):

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

B - PERFORMING OPERATIONS B82 - NANOTECHNOLOGY B82Y - SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES

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H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

H01L21/02439 - {Materials}
H01L21/0237 - {Materials}
H01L33/18 - within the light emitting region
H01L33/06 - within the light emitting region, e.g. quantum confinement structure or tunnel barrier

B - PERFORMING OPERATIONS B82 - NANOTECHNOLOGY B82Y - SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES

B82Y99/00 - Subject matter not provided for in other groups of this subclass

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01S - DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT

H01S5/32 - comprising PN junctions, e.g. hetero- or double- heterostructures

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

H01L29/127 - {Quantum box structures}
H01L29/0665 - {the shape of the body defining a nanostructure
H01L21/02603 - {Nanowires}
H01L21/02521 - {Materials}
H01L29/7853 - {the body having a non-rectangular crossection}

B - PERFORMING OPERATIONS B82 - NANOTECHNOLOGY B82Y - SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES

B82Y10/00 - Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic

Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC Y10S - TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS

Y10S977/951 - Laser

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

H01L29/0673 - {oriented parallel to a substrate}
H01L21/02639 - {Preparation of substrate for selective deposition}

Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC Y10S - TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS

Y10S977/962 - for carrying or transporting

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

H01L29/7783 - {using III-V semiconductor material}
H01L29/158 - {Structures without potential periodicity in a direction perpendicular to a major surface of the substrate, i.e. vertical direction, e.g. lateral superlattices, lateral surface superlattices [LSS]}
H01L21/02507 - {Alternating layers, e.g. superlattice}

B - PERFORMING OPERATIONS B82 - NANOTECHNOLOGY B82Y - SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES

B82Y40/00 - Manufacture or treatment of nanostructures

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DOE Contract Number:  

50615

Resource Type:

Patent

Resource Relation:

Patent File Date: 2011-09-01

Country of Publication:

United States

Language:

English