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Title: Structures of and methods for forming vertically aligned Si wire arrays

Abstract

A structure consisting of vertically aligned wire arrays on a Si substrate and a method for producing such wire arrays. The wire arrays are fabricated and positioned on a substrate with an orientation and density particularly adapted for conversion of received light to energy. A patterned oxide layer is used to provide for wire arrays that exhibit narrow diameter and length distribution and provide for controlled wire position.

Inventors:
; ; ;
Issue Date:
Research Org.:
California Institute of Technology (CalTech), Pasadena, CA (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1531871
Patent Number(s):
8530338
Application Number:
12/176,099
Assignee:
California Institute of Technology (Pasadena, CA)
Patent Classifications (CPCs):
B - PERFORMING OPERATIONS B82 - NANOTECHNOLOGY B82Y - SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
DOE Contract Number:  
FG02-03ER15483
Resource Type:
Patent
Resource Relation:
Patent File Date: 2008-07-18
Country of Publication:
United States
Language:
English

Citation Formats

Kayes, Brendan M., Filler, Michael A., Lewis, Nathan S., and Atwater, Jr., Harry A. Structures of and methods for forming vertically aligned Si wire arrays. United States: N. p., 2013. Web.
Kayes, Brendan M., Filler, Michael A., Lewis, Nathan S., & Atwater, Jr., Harry A. Structures of and methods for forming vertically aligned Si wire arrays. United States.
Kayes, Brendan M., Filler, Michael A., Lewis, Nathan S., and Atwater, Jr., Harry A. Tue . "Structures of and methods for forming vertically aligned Si wire arrays". United States. https://www.osti.gov/servlets/purl/1531871.
@article{osti_1531871,
title = {Structures of and methods for forming vertically aligned Si wire arrays},
author = {Kayes, Brendan M. and Filler, Michael A. and Lewis, Nathan S. and Atwater, Jr., Harry A.},
abstractNote = {A structure consisting of vertically aligned wire arrays on a Si substrate and a method for producing such wire arrays. The wire arrays are fabricated and positioned on a substrate with an orientation and density particularly adapted for conversion of received light to energy. A patterned oxide layer is used to provide for wire arrays that exhibit narrow diameter and length distribution and provide for controlled wire position.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Sep 10 00:00:00 EDT 2013},
month = {Tue Sep 10 00:00:00 EDT 2013}
}

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