Controlling the emissive properties of materials-improved lasers and upconversion materials
Abstract
Systems and methods for producing crystalline materials by atomic layer deposition, allowing for high control of localized doping. Such materials may be fibers or films suitable for use in optoelectronics and lasers.
- Inventors:
- Issue Date:
- Research Org.:
- Argonne National Laboratory (ANL), Argonne, IL (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1531869
- Patent Number(s):
- 8518179
- Application Number:
- 13/385,661
- Assignee:
- UChicago Argonne, LLC (Chicago, IL)
- Patent Classifications (CPCs):
-
C - CHEMISTRY C04 - CEMENTS C04B - LIME, MAGNESIA
C - CHEMISTRY C23 - COATING METALLIC MATERIAL C23C - COATING METALLIC MATERIAL
- DOE Contract Number:
- AC02-06CH11357
- Resource Type:
- Patent
- Resource Relation:
- Patent File Date: 2012-02-29
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; 37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY
Citation Formats
Proslier, Thomas, Becker, Nicholas G., Pellin, Michael J., Klug, Jeffrey, and Elam, Jeffrey W. Controlling the emissive properties of materials-improved lasers and upconversion materials. United States: N. p., 2013.
Web.
Proslier, Thomas, Becker, Nicholas G., Pellin, Michael J., Klug, Jeffrey, & Elam, Jeffrey W. Controlling the emissive properties of materials-improved lasers and upconversion materials. United States.
Proslier, Thomas, Becker, Nicholas G., Pellin, Michael J., Klug, Jeffrey, and Elam, Jeffrey W. Tue .
"Controlling the emissive properties of materials-improved lasers and upconversion materials". United States. https://www.osti.gov/servlets/purl/1531869.
@article{osti_1531869,
title = {Controlling the emissive properties of materials-improved lasers and upconversion materials},
author = {Proslier, Thomas and Becker, Nicholas G. and Pellin, Michael J. and Klug, Jeffrey and Elam, Jeffrey W.},
abstractNote = {Systems and methods for producing crystalline materials by atomic layer deposition, allowing for high control of localized doping. Such materials may be fibers or films suitable for use in optoelectronics and lasers.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Aug 27 00:00:00 EDT 2013},
month = {Tue Aug 27 00:00:00 EDT 2013}
}
Works referenced in this record:
Low-Temperature Al2O3 Atomic Layer Deposition
journal, February 2004
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Optical data storage medium with super resolution layer
patent-application, September 2005
- Cheong, Byung-Ki; Lee, Hyun-Suk; Lee, Taek-Sung
- US Patent Application 10/977604; 20050208257
Atomic layer deposition on fibrous materials
patent-application, May 2008
- Palley, Igor; Li, Chien-Wei; Bhatnagar, Ashok
- US Patent Application 11/602830; 20080119098
Controlled nano-doping of ultra thin films
patent, June 2009
- Chang, Jane P.; Van, Trinh Tu; Chiang, Tony P.
- US Patent Document 7,544,398
Method for fabricating a Fe-Si based thin film, and Fe-Si based thin film
patent-application, October 2004
- Funakubo, Hiroshi
- US Patent Application 10/758097; 20040206387
