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Title: Optical devices having controlled nonlinearity

Abstract

An optical device is provided having a solid state nonlinear material with a nanostructured extent, in at least one dimension, that is less than about 10 nm or that is at a temperature of less than about 77 K. An electronic band gap, EGap, of the material is at least about twice as large as an energy of a photon with a wavelength, λ, equal to an operational wavelength of the device. The material is characterized by a switching figure of merit, ξ, having a value that is at least about 2π. A dielectric structure is around at least one dimension of the nonlinear material in a geometric arrangement having a characteristic photonic band gap that at least partially overlaps the electronic band gap of the material. At least one waveguide is disposed at the dielectric structure in sufficient proximity with the material for coupling light to the material.

Inventors:
; ; ;
Issue Date:
Research Org.:
Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1531845
Patent Number(s):
8,369,670
Application Number:
12/596,709
Assignee:
Massachusetts Institute of Technology (Cambridge, MA)
DOE Contract Number:  
DMR02-13282; FG02-97ER25308
Resource Type:
Patent
Resource Relation:
Patent File Date: 2008-05-01
Country of Publication:
United States
Language:
English

Citation Formats

Bermel, Peter, Rodriguez, Alejandro, Soljacic, Marin, and Joannopoulos, John. Optical devices having controlled nonlinearity. United States: N. p., 2013. Web.
Bermel, Peter, Rodriguez, Alejandro, Soljacic, Marin, & Joannopoulos, John. Optical devices having controlled nonlinearity. United States.
Bermel, Peter, Rodriguez, Alejandro, Soljacic, Marin, and Joannopoulos, John. Tue . "Optical devices having controlled nonlinearity". United States. https://www.osti.gov/servlets/purl/1531845.
@article{osti_1531845,
title = {Optical devices having controlled nonlinearity},
author = {Bermel, Peter and Rodriguez, Alejandro and Soljacic, Marin and Joannopoulos, John},
abstractNote = {An optical device is provided having a solid state nonlinear material with a nanostructured extent, in at least one dimension, that is less than about 10 nm or that is at a temperature of less than about 77 K. An electronic band gap, EGap, of the material is at least about twice as large as an energy of a photon with a wavelength, λ, equal to an operational wavelength of the device. The material is characterized by a switching figure of merit, ξ, having a value that is at least about 2π. A dielectric structure is around at least one dimension of the nonlinear material in a geometric arrangement having a characteristic photonic band gap that at least partially overlaps the electronic band gap of the material. At least one waveguide is disposed at the dielectric structure in sufficient proximity with the material for coupling light to the material.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2013},
month = {2}
}

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Works referenced in this record:

Method for NRB-free nonlinear vibrational spectroscopy and miscroscopy
patent, February 2012


Periodic dielectric structure having a complete three-dimensional photonic band gap
patent, July 2003


Waveguide nonlinear optical frequency converter with integral modulation and optimization means
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Efficient harmonic generation and frequency conversion in multi-mode cavities
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Periodic dielectric structure for production of photonic band gap and devices incorporating the same
patent, August 1994


π-Phase shift device for light
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Nonlinear optical element
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