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Title: Spatially controlled atomic layer deposition in porous materials

Abstract

Methods for the selective deposition of materials within a porous substrate. The methods use the passivating effects of masking precursors applied to the porous substrate. A portion of a pore surface within the substrate is masked by exposing the substrate to one or more masking precursors. The depth of the pore surface that is masked is controllable by regulating the exposure of the substrate to the masking precursor. Application of the masking precursor prevents adsorption of one or more subsequently applied metal precursors about a portion of the pore surface coated by the masking precursor. Less than an entirety of the unmasked pore surface is coated by the metal precursor, forming a metal stripe on a portion of the pore surface. The depth of the metal stripe is controllable by regulating exposure of the porous substrate to the metal precursor. Subsequent exposure of the substrate to a saturating water application oxidizes the deposited precursors.

Inventors:
; ; ;
Issue Date:
Research Org.:
Argonne National Lab. (ANL), Argonne, IL (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1531842
Patent Number(s):
8,318,248
Application Number:
12/478,578
Assignee:
UChicago Argonne, LLC (Chicago, IL)
DOE Contract Number:  
AC02-06CH11357; W-31-109-ENG-38
Resource Type:
Patent
Resource Relation:
Patent File Date: 2009-06-04
Country of Publication:
United States
Language:
English

Citation Formats

Elam, Jeffrey W., Libera, Joseph A., Pellin, Michael J., and Stair, Peter C. Spatially controlled atomic layer deposition in porous materials. United States: N. p., 2012. Web.
Elam, Jeffrey W., Libera, Joseph A., Pellin, Michael J., & Stair, Peter C. Spatially controlled atomic layer deposition in porous materials. United States.
Elam, Jeffrey W., Libera, Joseph A., Pellin, Michael J., and Stair, Peter C. Tue . "Spatially controlled atomic layer deposition in porous materials". United States. https://www.osti.gov/servlets/purl/1531842.
@article{osti_1531842,
title = {Spatially controlled atomic layer deposition in porous materials},
author = {Elam, Jeffrey W. and Libera, Joseph A. and Pellin, Michael J. and Stair, Peter C.},
abstractNote = {Methods for the selective deposition of materials within a porous substrate. The methods use the passivating effects of masking precursors applied to the porous substrate. A portion of a pore surface within the substrate is masked by exposing the substrate to one or more masking precursors. The depth of the pore surface that is masked is controllable by regulating the exposure of the substrate to the masking precursor. Application of the masking precursor prevents adsorption of one or more subsequently applied metal precursors about a portion of the pore surface coated by the masking precursor. Less than an entirety of the unmasked pore surface is coated by the metal precursor, forming a metal stripe on a portion of the pore surface. The depth of the metal stripe is controllable by regulating exposure of the porous substrate to the metal precursor. Subsequent exposure of the substrate to a saturating water application oxidizes the deposited precursors.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2012},
month = {11}
}

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