Spatially controlled atomic layer deposition in porous materials

Title: Spatially controlled atomic layer deposition in porous materials

Abstract

Methods for the selective deposition of materials within a porous substrate. The methods use the passivating effects of masking precursors applied to the porous substrate. A portion of a pore surface within the substrate is masked by exposing the substrate to one or more masking precursors. The depth of the pore surface that is masked is controllable by regulating the exposure of the substrate to the masking precursor. Application of the masking precursor prevents adsorption of one or more subsequently applied metal precursors about a portion of the pore surface coated by the masking precursor. Less than an entirety of the unmasked pore surface is coated by the metal precursor, forming a metal stripe on a portion of the pore surface. The depth of the metal stripe is controllable by regulating exposure of the porous substrate to the metal precursor. Subsequent exposure of the substrate to a saturating water application oxidizes the deposited precursors.

Inventors:: Elam, Jeffrey W.; Libera, Joseph A.; Pellin, Michael J.; Stair, Peter C.

Issue Date:: 2012-11-27

Research Org.:: Argonne National Lab. (ANL), Argonne, IL (United States)

Sponsoring Org.:: USDOE

OSTI Identifier:: 1531842

Patent Number(s):: 8318248

Application Number:: 12/478,578

Assignee:: UChicago Argonne, LLC (Chicago, IL)

Patent Classifications (CPCs):: C - CHEMISTRY C23 - COATING METALLIC MATERIAL C23C - COATING METALLIC MATERIAL

B - PERFORMING OPERATIONS B01 - PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL B01J - CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY

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C - CHEMISTRY C23 - COATING METALLIC MATERIAL C23C - COATING METALLIC MATERIAL
C23C16/045 - {Coating cavities or hollow spaces, e.g. interior of tubes
C23C16/45555 - {applied in non-semiconductor technology}
C23C16/407 - {of zinc, germanium, cadmium, indium, tin, thallium or bismuth}

B - PERFORMING OPERATIONS B01 - PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL B01J - CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY
B01J35/065 - {Membranes}
B01J37/0226 - {Oxidation of the substrate, e.g. anodisation}

C - CHEMISTRY C23 - COATING METALLIC MATERIAL C23C - COATING METALLIC MATERIAL
C23C16/403 - {of aluminium, magnesium or beryllium}
C23C16/405 - {of refractory metals or yttrium}
C23C16/45525 - {Atomic layer deposition [ALD]}
C23C16/042 - {using masks}

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DOE Contract Number:: AC02-06CH11357; W-31-109-ENG-38

Resource Type:: Patent

Resource Relation:: Patent File Date: 2009-06-04

Country of Publication:: United States

Language:: English

Citation Formats


                    Elam, Jeffrey W., Libera, Joseph A., Pellin, Michael J., and Stair, Peter C. Spatially controlled atomic layer deposition in porous materials.  United States: N. p., 2012. 
        Web.

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                    Elam, Jeffrey W., Libera, Joseph A., Pellin, Michael J., & Stair, Peter C. Spatially controlled atomic layer deposition in porous materials.  United States.

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                    Elam, Jeffrey W., Libera, Joseph A., Pellin, Michael J., and Stair, Peter C. Tue .  
        "Spatially controlled atomic layer deposition in porous materials".  United States.  https://www.osti.gov/servlets/purl/1531842.

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@article{osti_1531842,

  title        = {Spatially controlled atomic layer deposition in porous materials},

  author       = {Elam, Jeffrey W. and Libera, Joseph A. and Pellin, Michael J. and Stair, Peter C.},

  abstractNote = {Methods for the selective deposition of materials within a porous substrate. The methods use the passivating effects of masking precursors applied to the porous substrate. A portion of a pore surface within the substrate is masked by exposing the substrate to one or more masking precursors. The depth of the pore surface that is masked is controllable by regulating the exposure of the substrate to the masking precursor. Application of the masking precursor prevents adsorption of one or more subsequently applied metal precursors about a portion of the pore surface coated by the masking precursor. Less than an entirety of the unmasked pore surface is coated by the metal precursor, forming a metal stripe on a portion of the pore surface. The depth of the metal stripe is controllable by regulating exposure of the porous substrate to the metal precursor. Subsequent exposure of the substrate to a saturating water application oxidizes the deposited precursors.},

  doi          = {},

  journal      = {},
number       = ,

  volume       = ,

  place        = {United States},

  year         = {2012},

  month        = {11}

}

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Works referenced in this record:

Patterned atomic layer epitaxy
patent-application, October 2005

Randall, John N.; Peng, Jingping; Liu, Jun-Fu
US Patent Application 11/089814; 20050223968
URL: http://appft.uspto.gov/netacgi/nph-Parser?Sect1=PTO1&Sect2=HITOFF&d=PG01&p=1&u=%2Fnetahtml%2FPTO%2Fsrchnum.html&r=1&f=G&l=50&s1=%2220050223968%22.PGNR.&OS=DN/20050223968&RS=DN/20050223968

Works referencing / citing this record:

Designed porosity materials in nuclear reactor components
patent, September 2016

Yacout, A. M.; Pellin, Michael J.; Stan, Marius
US Patent Document 9,437,335
URL: http://patft.uspto.gov/netacgi/nph-Parser?patentnumber=9437335

Method and system for continuous atomic layer deposition
patent, March 2017

Elam, Jeffrey W.; Yanguas-Gil, Angel; Libera, Joseph A.
US Patent Document 9,598,769
URL: http://patft.uspto.gov/netacgi/nph-Parser?patentnumber=9598769

ALD coating of nuclear fuel actinides materials
patent, September 2017

Yacout, A. M.; Pellin, Michael J.; Yun, Di
US Patent Document 9,754,687
URL: http://patft.uspto.gov/netacgi/nph-Parser?patentnumber=9754687

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