Integration of dissimilar materials for advanced multifunctional devices
Abstract
A device including a layered heterostructure with an oxygen-containing material, with a carbon layer and an amorphous oxygen diffusion barrier protecting the carbon layer from etching by oxygen. One or more of a metal, a carbide or an oxide may be in contact with the amorphous oxygen diffusion barrier that has the lowest free energy of oxide formation in the device. Various devices are disclosed as are varieties of carbon allotropes. Methods of protecting carbon, such as diamond from the oxygen etching in processes such as device manufacture are also disclosed.
- Inventors:
- Issue Date:
- Research Org.:
- Argonne National Lab. (ANL), Argonne, IL (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1531831
- Patent Number(s):
- 7791201
- Application Number:
- 11/607,581
- Assignee:
- UChicago Argonne, LLC (Chicago, IL)
- Patent Classifications (CPCs):
-
G - PHYSICS G01 - MEASURING G01N - INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
C - CHEMISTRY C23 - COATING METALLIC MATERIAL C23C - COATING METALLIC MATERIAL
- DOE Contract Number:
- AC02-06CH11357; W-31-109-ENG-38
- Resource Type:
- Patent
- Resource Relation:
- Patent File Date: 2006-11-30
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; 37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY
Citation Formats
Auciello, Orlando, Carlisle, John, Gerbi, Jennifer, and Birrell, James. Integration of dissimilar materials for advanced multifunctional devices. United States: N. p., 2010.
Web.
Auciello, Orlando, Carlisle, John, Gerbi, Jennifer, & Birrell, James. Integration of dissimilar materials for advanced multifunctional devices. United States.
Auciello, Orlando, Carlisle, John, Gerbi, Jennifer, and Birrell, James. Tue .
"Integration of dissimilar materials for advanced multifunctional devices". United States. https://www.osti.gov/servlets/purl/1531831.
@article{osti_1531831,
title = {Integration of dissimilar materials for advanced multifunctional devices},
author = {Auciello, Orlando and Carlisle, John and Gerbi, Jennifer and Birrell, James},
abstractNote = {A device including a layered heterostructure with an oxygen-containing material, with a carbon layer and an amorphous oxygen diffusion barrier protecting the carbon layer from etching by oxygen. One or more of a metal, a carbide or an oxide may be in contact with the amorphous oxygen diffusion barrier that has the lowest free energy of oxide formation in the device. Various devices are disclosed as are varieties of carbon allotropes. Methods of protecting carbon, such as diamond from the oxygen etching in processes such as device manufacture are also disclosed.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2010},
month = {9}
}
Works referenced in this record:
Studies of thin film growth and oxidation processes for conductive Ti–Al diffusion barrier layers via in situ surface sensitive analytical techniques
journal, August 2001
- Dhote, A. M.; Auciello, O.; Gruen, D. M.
- Applied Physics Letters, Vol. 79, Issue 6
Materials science and integration bases for fabrication of (BaxSr1−x)TiO3 thin film capacitors with layered Cu-based electrodes
journal, November 2003
- Fan, W.; Kabius, B.; Hiller, J. M.
- Journal of Applied Physics, Vol. 94, Issue 9