Title: Integration of dissimilar materials for advanced multifunctional devices

Abstract

A device including a layered heterostructure with an oxygen-containing material, with a carbon layer and an amorphous oxygen diffusion barrier protecting the carbon layer from etching by oxygen. One or more of a metal, a carbide or an oxide may be in contact with the amorphous oxygen diffusion barrier that has the lowest free energy of oxide formation in the device. Various devices are disclosed as are varieties of carbon allotropes. Methods of protecting carbon, such as diamond from the oxygen etching in processes such as device manufacture are also disclosed.

Inventors:

Auciello, Orlando; Carlisle, John; Gerbi, Jennifer; Birrell, James

Issue Date:

Tue Sep 07 00:00:00 EDT 2010

Research Org.:

Argonne National Laboratory (ANL), Argonne, IL (United States)

Sponsoring Org.:

USDOE

OSTI Identifier:

1531831

Patent Number(s):

7791201

Application Number:

11/607,581

Assignee:

UChicago Argonne, LLC (Chicago, IL)

Patent Classifications (CPCs):

B - PERFORMING OPERATIONS B82 - NANOTECHNOLOGY B82Y - SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES

C - CHEMISTRY C23 - COATING METALLIC MATERIAL C23C - COATING METALLIC MATERIAL

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B - PERFORMING OPERATIONS B82 - NANOTECHNOLOGY B82Y - SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES

B82Y10/00 - Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
B82Y30/00 - Nanotechnology for materials or surface science, e.g. nanocomposites

C - CHEMISTRY C23 - COATING METALLIC MATERIAL C23C - COATING METALLIC MATERIAL

C23C14/024 - {Deposition of sublayers, e.g. to promote adhesion of the coating
C23C14/08 - Oxides
C23C16/0272 - {Deposition of sub-layers, e.g. to promote the adhesion of the main coating}
C23C16/40 - Oxides
C23C28/321 - {with at least one metal alloy layer}
C23C28/322 - {only coatings of metal elements only}
C23C28/341 - {with at least one carbide layer}
C23C28/343 - {with at least one DLC or an amorphous carbon based layer, the layer being doped or not}
C23C28/345 - {with at least one oxide layer}
C23C28/3455 - {with a refractory ceramic layer, e.g. refractory metal oxide, ZrO2, rare earth oxides or a thermal barrier system comprising at least one refractory oxide layer}
C23C28/36 - {including layers graded in composition or physical properties}

G - PHYSICS G01 - MEASURING G01N - INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES

G01N33/5438 - {Electrodes}
G01N33/551 - the carrier being inorganic

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

H01L21/0425 - {Making electrodes}
H01L21/3146 - {Carbon layers, e.g. diamond-like layers}
H01L28/60 - {Electrodes}

H - ELECTRICITY H03 - BASIC ELECTRONIC CIRCUITRY H03H - IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS

H03H9/2452 - {Free-free beam resonators}

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DOE Contract Number:  

AC02-06CH11357; W-31-109-ENG-38

Resource Type:

Patent

Resource Relation:

Patent File Date: 2006-11-30

Country of Publication:

United States

Language:

English

Subject:

36 MATERIALS SCIENCE; 37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY