Stable and all solution processable quantum dot light-emitting diodes
Abstract
Embodiments of the invention are directed to quantum dot light emitting diodes (QD-LEDs) where the electron injection and transport layer comprises inorganic nanoparticles (I-NPs). The use of I-NPs results in an improved QD-LED over those having a conventional organic based electron injection and transport layer and does not require chemical reaction to form the inorganic layer. In one embodiment of the invention the hole injection and transport layer can be metal oxide nanoparticles (MO-NPs) which allows the entire device to have the stability of an all inorganic system and permit formation of the QD-LED by a series of relatively inexpensive steps involving deposition of suspensions of nanoparticles and removing the suspending vehicle.
- Inventors:
- Issue Date:
- Research Org.:
- Univ. of Florida, Gainesville, FL (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1531804
- Patent Number(s):
- 9,054,330
- Application Number:
- 13/382,340
- Assignee:
- University of Florida Research Foundation, Inc. (Gainesville, FL)
- DOE Contract Number:
- FC26-06NT42855; W911NF-07-1-0545
- Resource Type:
- Patent
- Resource Relation:
- Patent File Date: 2010-07-07
- Country of Publication:
- United States
- Language:
- English
Citation Formats
Qian, Lei, Zheng, Ying, Xue, Jiangeng, and Holloway, Paul H. Stable and all solution processable quantum dot light-emitting diodes. United States: N. p., 2015.
Web.
Qian, Lei, Zheng, Ying, Xue, Jiangeng, & Holloway, Paul H. Stable and all solution processable quantum dot light-emitting diodes. United States.
Qian, Lei, Zheng, Ying, Xue, Jiangeng, and Holloway, Paul H. Tue .
"Stable and all solution processable quantum dot light-emitting diodes". United States. https://www.osti.gov/servlets/purl/1531804.
@article{osti_1531804,
title = {Stable and all solution processable quantum dot light-emitting diodes},
author = {Qian, Lei and Zheng, Ying and Xue, Jiangeng and Holloway, Paul H.},
abstractNote = {Embodiments of the invention are directed to quantum dot light emitting diodes (QD-LEDs) where the electron injection and transport layer comprises inorganic nanoparticles (I-NPs). The use of I-NPs results in an improved QD-LED over those having a conventional organic based electron injection and transport layer and does not require chemical reaction to form the inorganic layer. In one embodiment of the invention the hole injection and transport layer can be metal oxide nanoparticles (MO-NPs) which allows the entire device to have the stability of an all inorganic system and permit formation of the QD-LED by a series of relatively inexpensive steps involving deposition of suspensions of nanoparticles and removing the suspending vehicle.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2015},
month = {6}
}