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Title: Stable and all solution processable quantum dot light-emitting diodes

Abstract

Embodiments of the invention are directed to quantum dot light emitting diodes (QD-LEDs) where the electron injection and transport layer comprises inorganic nanoparticles (I-NPs). The use of I-NPs results in an improved QD-LED over those having a conventional organic based electron injection and transport layer and does not require chemical reaction to form the inorganic layer. In one embodiment of the invention the hole injection and transport layer can be metal oxide nanoparticles (MO-NPs) which allows the entire device to have the stability of an all inorganic system and permit formation of the QD-LED by a series of relatively inexpensive steps involving deposition of suspensions of nanoparticles and removing the suspending vehicle.

Inventors:
; ; ;
Issue Date:
Research Org.:
Univ. of Florida, Gainesville, FL (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1531804
Patent Number(s):
9,054,330
Application Number:
13/382,340
Assignee:
University of Florida Research Foundation, Inc. (Gainesville, FL)
DOE Contract Number:  
FC26-06NT42855; W911NF-07-1-0545
Resource Type:
Patent
Resource Relation:
Patent File Date: 2010-07-07
Country of Publication:
United States
Language:
English

Citation Formats

Qian, Lei, Zheng, Ying, Xue, Jiangeng, and Holloway, Paul H. Stable and all solution processable quantum dot light-emitting diodes. United States: N. p., 2015. Web.
Qian, Lei, Zheng, Ying, Xue, Jiangeng, & Holloway, Paul H. Stable and all solution processable quantum dot light-emitting diodes. United States.
Qian, Lei, Zheng, Ying, Xue, Jiangeng, and Holloway, Paul H. Tue . "Stable and all solution processable quantum dot light-emitting diodes". United States. https://www.osti.gov/servlets/purl/1531804.
@article{osti_1531804,
title = {Stable and all solution processable quantum dot light-emitting diodes},
author = {Qian, Lei and Zheng, Ying and Xue, Jiangeng and Holloway, Paul H.},
abstractNote = {Embodiments of the invention are directed to quantum dot light emitting diodes (QD-LEDs) where the electron injection and transport layer comprises inorganic nanoparticles (I-NPs). The use of I-NPs results in an improved QD-LED over those having a conventional organic based electron injection and transport layer and does not require chemical reaction to form the inorganic layer. In one embodiment of the invention the hole injection and transport layer can be metal oxide nanoparticles (MO-NPs) which allows the entire device to have the stability of an all inorganic system and permit formation of the QD-LED by a series of relatively inexpensive steps involving deposition of suspensions of nanoparticles and removing the suspending vehicle.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2015},
month = {6}
}

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