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Title: Stable and all solution processable quantum dot light-emitting diodes

Abstract

Embodiments of the invention are directed to quantum dot light emitting diodes (QD-LEDs) where the electron injection and transport layer comprises inorganic nanoparticles (I-NPs). The use of I-NPs results in an improved QD-LED over those having a conventional organic based electron injection and transport layer and does not require chemical reaction to form the inorganic layer. In one embodiment of the invention the hole injection and transport layer can be metal oxide nanoparticles (MO-NPs) which allows the entire device to have the stability of an all inorganic system and permit formation of the QD-LED by a series of relatively inexpensive steps involving deposition of suspensions of nanoparticles and removing the suspending vehicle.

Inventors:
; ; ;
Issue Date:
Research Org.:
Univ. of Florida, Gainesville, FL (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1531804
Patent Number(s):
9054330
Application Number:
13/382,340
Assignee:
University of Florida Research Foundation, Inc. (Gainesville, FL)
Patent Classifications (CPCs):
H - ELECTRICITY H05 - ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR H05B - ELECTRIC HEATING
DOE Contract Number:  
FC26-06NT42855; W911NF-07-1-0545
Resource Type:
Patent
Resource Relation:
Patent File Date: 2010-07-07
Country of Publication:
United States
Language:
English

Citation Formats

Qian, Lei, Zheng, Ying, Xue, Jiangeng, and Holloway, Paul H. Stable and all solution processable quantum dot light-emitting diodes. United States: N. p., 2015. Web.
Qian, Lei, Zheng, Ying, Xue, Jiangeng, & Holloway, Paul H. Stable and all solution processable quantum dot light-emitting diodes. United States.
Qian, Lei, Zheng, Ying, Xue, Jiangeng, and Holloway, Paul H. Tue . "Stable and all solution processable quantum dot light-emitting diodes". United States. https://www.osti.gov/servlets/purl/1531804.
@article{osti_1531804,
title = {Stable and all solution processable quantum dot light-emitting diodes},
author = {Qian, Lei and Zheng, Ying and Xue, Jiangeng and Holloway, Paul H.},
abstractNote = {Embodiments of the invention are directed to quantum dot light emitting diodes (QD-LEDs) where the electron injection and transport layer comprises inorganic nanoparticles (I-NPs). The use of I-NPs results in an improved QD-LED over those having a conventional organic based electron injection and transport layer and does not require chemical reaction to form the inorganic layer. In one embodiment of the invention the hole injection and transport layer can be metal oxide nanoparticles (MO-NPs) which allows the entire device to have the stability of an all inorganic system and permit formation of the QD-LED by a series of relatively inexpensive steps involving deposition of suspensions of nanoparticles and removing the suspending vehicle.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2015},
month = {6}
}

Works referenced in this record:

Organic electroluminescent device
patent-application, May 2006


Quantum Dot Light-Emitting Diode Comprising Inorganic Electron Transport Layer
patent-application, February 2009


Light emitting device including semiconductor nanocrystals
patent-application, December 2010


Transparent electrode, optoelectronic apparatus and devices
patent-application, September 2004


Composition for organic electroluminescene element and organic electroluminescent using the same
patent-application, August 2004


Engineered structure for solid-state light emitters
patent-application, April 2008


    Works referencing / citing this record:

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    Quantum dot spacing for high efficiency quantum dot LED displays
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    Quantum dot light-emitting device
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    Light-emitting device
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