Title: Method for forming diffusion regions in a silicon substrate

Abstract

A method of manufacturing solar cells is disclosed. The method comprises depositing an etch-resistant dopant material on a silicon substrate, the etch-resistant dopant material comprising a dopant source, forming a cross-linked matrix in the etch-resistant dopant material using a non-thermal cure of the etch-resistant dopant material, and heating the silicon substrate and the etch-resistant dopant material to a temperature sufficient to cause the dopant source to diffuse into the silicon substrate.

Inventors:

Wu, Kahn C.; Kraft, Steven M.; Loscutoff, Paul; Molesa, Steven Edward

Issue Date:

2015-04-28

Research Org.:

SunPower Corp., San Jose, CA (United States)

Sponsoring Org.:

USDOE

OSTI Identifier:

1531803

Patent Number(s):

9018033

Application Number:

14/061,422

Assignee:

SunPower Corporation (San Jose, CA)

Patent Classifications (CPCs):

Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

Show more

Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION

Y02E10/546 - Polycrystalline silicon PV cells

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

H01L31/182 - {Special manufacturing methods for polycrystalline Si, e.g. Si ribbon, poly Si ingots, thin films of polycrystalline Si}

Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION

Y02E10/547 - Monocrystalline silicon PV cells

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

H01L31/028 - including, apart from doping material or other impurities, only elements of Group IV of the Periodic System

Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02P - CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS

Y02P70/50 - Manufacturing or production processes characterised by the final manufactured product

Show less

DOE Contract Number:  

FC36-07GO17043

Resource Type:

Patent

Resource Relation:

Patent File Date: 2013-10-23

Country of Publication:

United States

Language:

English

Subject:

14 SOLAR ENERGY; 42 ENGINEERING