Method for forming diffusion regions in a silicon substrate

Wu, Kahn C.; Kraft, Steven M.; Loscutoff, Paul; Molesa, Steven Edward

Title: Method for forming diffusion regions in a silicon substrate

Abstract

A method of manufacturing solar cells is disclosed. The method comprises depositing an etch-resistant dopant material on a silicon substrate, the etch-resistant dopant material comprising a dopant source, forming a cross-linked matrix in the etch-resistant dopant material using a non-thermal cure of the etch-resistant dopant material, and heating the silicon substrate and the etch-resistant dopant material to a temperature sufficient to cause the dopant source to diffuse into the silicon substrate.

Inventors:: Wu, Kahn C.; Kraft, Steven M.; Loscutoff, Paul; Molesa, Steven Edward

Issue Date:: 2015-04-28

Research Org.:: SunPower Corp., San Jose, CA (United States)

Sponsoring Org.:: USDOE

OSTI Identifier:: 1531803

Patent Number(s):: 9018033

Application Number:: 14/061,422

Assignee:: SunPower Corporation (San Jose, CA)

Patent Classifications (CPCs):: Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

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Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
Y02E10/546 - Polycrystalline silicon PV cells
Y02E10/547 - Monocrystalline silicon PV cells

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
H01L31/182 - {Special manufacturing methods for polycrystalline Si, e.g. Si ribbon, poly Si ingots, thin films of polycrystalline Si}
H01L31/028 - including, apart from doping material or other impurities, only elements of Group IV of the Periodic System

Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02P - CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
Y02P70/50 - Manufacturing or production processes characterised by the final manufactured product

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DOE Contract Number:: FC36-07GO17043

Resource Type:: Patent

Resource Relation:: Patent File Date: 2013-10-23

Country of Publication:: United States

Language:: English

Subject:: 14 SOLAR ENERGY; 42 ENGINEERING

Citation Formats


                    Wu, Kahn C., Kraft, Steven M., Loscutoff, Paul, and Molesa, Steven Edward. Method for forming diffusion regions in a silicon substrate.  United States: N. p., 2015. 
        Web.

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                    Wu, Kahn C., Kraft, Steven M., Loscutoff, Paul, & Molesa, Steven Edward. Method for forming diffusion regions in a silicon substrate.  United States.

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                    Wu, Kahn C., Kraft, Steven M., Loscutoff, Paul, and Molesa, Steven Edward. Tue .  
        "Method for forming diffusion regions in a silicon substrate".  United States.  https://www.osti.gov/servlets/purl/1531803.

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@article{osti_1531803,

  title        = {Method for forming diffusion regions in a silicon substrate},

  author       = {Wu, Kahn C. and Kraft, Steven M. and Loscutoff, Paul and Molesa, Steven Edward},

  abstractNote = {A method of manufacturing solar cells is disclosed. The method comprises depositing an etch-resistant dopant material on a silicon substrate, the etch-resistant dopant material comprising a dopant source, forming a cross-linked matrix in the etch-resistant dopant material using a non-thermal cure of the etch-resistant dopant material, and heating the silicon substrate and the etch-resistant dopant material to a temperature sufficient to cause the dopant source to diffuse into the silicon substrate.},

  doi          = {},

  journal      = {},
number       = ,

  volume       = ,

  place        = {United States},

  year         = {2015},

  month        = {4}

}

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