Selective nanoscale growth of lattice mismatched materials

Title: Selective nanoscale growth of lattice mismatched materials

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Abstract

Exemplary embodiments provide materials and methods of forming high-quality semiconductor devices using lattice-mismatched materials. In one embodiment, a composite film including one or more substantially-single-particle-thick nanoparticle layers can be deposited over a substrate as a nanoscale selective growth mask for epitaxially growing lattice-mismatched materials over the substrate.

Inventors:: Lee, Seung -Chang; Brueck, Steven

Issue Date:: 2015-03-17

Research Org.:: STC.UNM, Albuquerque, NM (United States)

Sponsoring Org.:: USDOE

OSTI Identifier:: 1531796

Patent Number(s):: 8980730

Application Number:: 13/232,629

Assignee:: STC.UNM (Albuquerque, NM)

Patent Classifications (CPCs):: C - CHEMISTRY C30 - CRYSTAL GROWTH C30B - SINGLE-CRYSTAL-GROWTH

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

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C - CHEMISTRY C30 - CRYSTAL GROWTH C30B - SINGLE-CRYSTAL-GROWTH
C30B25/04 - Pattern deposit, e.g. by using masks

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
H01L21/02505 - {consisting of more than two layers}
H01L21/02642 - {Mask materials other than SiO2 or SiN}
H01L21/02647 - {Lateral overgrowth}
H01L21/02546 - {Arsenides}

C - CHEMISTRY C30 - CRYSTAL GROWTH C30B - SINGLE-CRYSTAL-GROWTH
C30B7/005 - {Epitaxial layer growth}

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
H01L29/0688 - {characterised by the particular shape of a junction between semiconductor regions}
H01L21/02381 - {Silicon, silicon germanium, germanium}
H01L21/02433 - {Crystal orientation}
H01L21/02455 - {Group 13/15 materials}

C - CHEMISTRY C30 - CRYSTAL GROWTH C30B - SINGLE-CRYSTAL-GROWTH
C30B29/42 - Gallium arsenide

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
H01L21/02513 - {Microstructure}
H01L29/0665 - {the shape of the body defining a nanostructure
H01L29/267 - in different semiconductor regions {, e.g. heterojunctions

C - CHEMISTRY C30 - CRYSTAL GROWTH C30B - SINGLE-CRYSTAL-GROWTH
C30B23/025 - {characterised by the substrate}

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
H01L21/02538 - {Group 13/15 materials}

C - CHEMISTRY C30 - CRYSTAL GROWTH C30B - SINGLE-CRYSTAL-GROWTH
C30B25/183 - {being provided with a buffer layer, e.g. a lattice matching layer}

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
H01L21/02458 - {Nitrides}

C - CHEMISTRY C30 - CRYSTAL GROWTH C30B - SINGLE-CRYSTAL-GROWTH
C30B29/40 - AIIIBV compounds {wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi}

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
H01L21/02636 - {Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials}

C - CHEMISTRY C30 - CRYSTAL GROWTH C30B - SINGLE-CRYSTAL-GROWTH
C30B25/18 - characterised by the substrate

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DOE Contract Number:: 909872

Resource Type:: Patent

Resource Relation:: Patent File Date: 2011-09-14

Country of Publication:: United States

Language:: English

Citation Formats


                    Lee, Seung -Chang, and Brueck, Steven. Selective nanoscale growth of lattice mismatched materials.  United States: N. p., 2015. 
        Web.

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                    Lee, Seung -Chang, & Brueck, Steven. Selective nanoscale growth of lattice mismatched materials.  United States.

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                    Lee, Seung -Chang, and Brueck, Steven. Tue .  
        "Selective nanoscale growth of lattice mismatched materials".  United States.  https://www.osti.gov/servlets/purl/1531796.

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@article{osti_1531796,

  title        = {Selective nanoscale growth of lattice mismatched materials},

  author       = {Lee, Seung -Chang and Brueck, Steven},

  abstractNote = {Exemplary embodiments provide materials and methods of forming high-quality semiconductor devices using lattice-mismatched materials. In one embodiment, a composite film including one or more substantially-single-particle-thick nanoparticle layers can be deposited over a substrate as a nanoscale selective growth mask for epitaxially growing lattice-mismatched materials over the substrate.},

  doi          = {},

  journal      = {},
number       = ,

  volume       = ,

  place        = {United States},

  year         = {2015},

  month        = {3}

}

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