Title: Selective nanoscale growth of lattice mismatched materials

Abstract

Exemplary embodiments provide materials and methods of forming high-quality semiconductor devices using lattice-mismatched materials. In one embodiment, a composite film including one or more substantially-single-particle-thick nanoparticle layers can be deposited over a substrate as a nanoscale selective growth mask for epitaxially growing lattice-mismatched materials over the substrate.

Inventors:

Lee, Seung -Chang; Brueck, Steven

Issue Date:

2015-03-17

Research Org.:

STC.UNM, Albuquerque, NM (United States)

Sponsoring Org.:

USDOE

OSTI Identifier:

1531796

Patent Number(s):

8980730

Application Number:

13/232,629

Assignee:

STC.UNM (Albuquerque, NM)

Patent Classifications (CPCs):

C - CHEMISTRY C30 - CRYSTAL GROWTH C30B - SINGLE-CRYSTAL-GROWTH

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

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C - CHEMISTRY C30 - CRYSTAL GROWTH C30B - SINGLE-CRYSTAL-GROWTH

C30B25/04 - Pattern deposit, e.g. by using masks

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

H01L21/02647 - {Lateral overgrowth}
H01L21/02642 - {Mask materials other than SiO2 or SiN}
H01L21/02505 - {consisting of more than two layers}
H01L21/02546 - {Arsenides}

C - CHEMISTRY C30 - CRYSTAL GROWTH C30B - SINGLE-CRYSTAL-GROWTH

C30B7/005 - {Epitaxial layer growth}

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

H01L29/0688 - {characterised by the particular shape of a junction between semiconductor regions}
H01L21/02381 - {Silicon, silicon germanium, germanium}
H01L21/02455 - {Group 13/15 materials}
H01L21/02433 - {Crystal orientation}

C - CHEMISTRY C30 - CRYSTAL GROWTH C30B - SINGLE-CRYSTAL-GROWTH

C30B29/42 - Gallium arsenide

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

H01L21/02513 - {Microstructure}
H01L29/267 - in different semiconductor regions {, e.g. heterojunctions
H01L29/0665 - {the shape of the body defining a nanostructure
H01L21/02538 - {Group 13/15 materials}

C - CHEMISTRY C30 - CRYSTAL GROWTH C30B - SINGLE-CRYSTAL-GROWTH

C30B23/025 - {characterised by the substrate}

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

H01L21/02458 - {Nitrides}

C - CHEMISTRY C30 - CRYSTAL GROWTH C30B - SINGLE-CRYSTAL-GROWTH

C30B25/183 - {being provided with a buffer layer, e.g. a lattice matching layer}

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

H01L21/02636 - {Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials}

C - CHEMISTRY C30 - CRYSTAL GROWTH C30B - SINGLE-CRYSTAL-GROWTH

C30B29/40 - AIIIBV compounds {wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi}
C30B25/18 - characterised by the substrate

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DOE Contract Number:  

909872

Resource Type:

Patent

Resource Relation:

Patent File Date: 2011-09-14

Country of Publication:

United States

Language:

English