Selective nanoscale growth of lattice mismatched materials
Abstract
Exemplary embodiments provide materials and methods of forming high-quality semiconductor devices using lattice-mismatched materials. In one embodiment, a composite film including one or more substantially-single-particle-thick nanoparticle layers can be deposited over a substrate as a nanoscale selective growth mask for epitaxially growing lattice-mismatched materials over the substrate.
- Inventors:
- Issue Date:
- Research Org.:
- STC.UNM, Albuquerque, NM (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1531796
- Patent Number(s):
- 8,980,730
- Application Number:
- 13/232,629
- Assignee:
- STC.UNM (Albuquerque, NM)
- DOE Contract Number:
- 909872
- Resource Type:
- Patent
- Resource Relation:
- Patent File Date: 2011-09-14
- Country of Publication:
- United States
- Language:
- English
Citation Formats
Lee, Seung -Chang, and Brueck, Steven. Selective nanoscale growth of lattice mismatched materials. United States: N. p., 2015.
Web.
Lee, Seung -Chang, & Brueck, Steven. Selective nanoscale growth of lattice mismatched materials. United States.
Lee, Seung -Chang, and Brueck, Steven. Tue .
"Selective nanoscale growth of lattice mismatched materials". United States. https://www.osti.gov/servlets/purl/1531796.
@article{osti_1531796,
title = {Selective nanoscale growth of lattice mismatched materials},
author = {Lee, Seung -Chang and Brueck, Steven},
abstractNote = {Exemplary embodiments provide materials and methods of forming high-quality semiconductor devices using lattice-mismatched materials. In one embodiment, a composite film including one or more substantially-single-particle-thick nanoparticle layers can be deposited over a substrate as a nanoscale selective growth mask for epitaxially growing lattice-mismatched materials over the substrate.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2015},
month = {3}
}
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