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Title: Selective nanoscale growth of lattice mismatched materials

Abstract

Exemplary embodiments provide materials and methods of forming high-quality semiconductor devices using lattice-mismatched materials. In one embodiment, a composite film including one or more substantially-single-particle-thick nanoparticle layers can be deposited over a substrate as a nanoscale selective growth mask for epitaxially growing lattice-mismatched materials over the substrate.

Inventors:
;
Issue Date:
Research Org.:
STC.UNM, Albuquerque, NM (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1531796
Patent Number(s):
8,980,730
Application Number:
13/232,629
Assignee:
STC.UNM (Albuquerque, NM)
DOE Contract Number:  
909872
Resource Type:
Patent
Resource Relation:
Patent File Date: 2011-09-14
Country of Publication:
United States
Language:
English

Citation Formats

Lee, Seung -Chang, and Brueck, Steven. Selective nanoscale growth of lattice mismatched materials. United States: N. p., 2015. Web.
Lee, Seung -Chang, & Brueck, Steven. Selective nanoscale growth of lattice mismatched materials. United States.
Lee, Seung -Chang, and Brueck, Steven. Tue . "Selective nanoscale growth of lattice mismatched materials". United States. https://www.osti.gov/servlets/purl/1531796.
@article{osti_1531796,
title = {Selective nanoscale growth of lattice mismatched materials},
author = {Lee, Seung -Chang and Brueck, Steven},
abstractNote = {Exemplary embodiments provide materials and methods of forming high-quality semiconductor devices using lattice-mismatched materials. In one embodiment, a composite film including one or more substantially-single-particle-thick nanoparticle layers can be deposited over a substrate as a nanoscale selective growth mask for epitaxially growing lattice-mismatched materials over the substrate.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2015},
month = {3}
}

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Works referenced in this record:

Nitride-based semiconductor element and method of forming nitride-based semiconductor
patent, April 2004


Method for epitaxial growth
patent, July 2012