Low-voltage, N-channel transistors including a hybrid semiconductor-dielectric material
Abstract
Hybrid semiconducting-dielectric materials and electronic or electro-optic devices using the hybrid semiconducting-dielectric materials. Hybrid semiconducting-dielectric materials comprise molecules that have a core section that provides an n-type semiconducting property and side chains that provide a dielectric property to a layer of hybrid semiconducting-dielectric material. Specific hybrid semiconducting-dielectric materials include tetracarboxylic diimide compounds having sidechains comprising fluorine substituted aliphatic or aromatic moieties linked to the tetracarboxylic diimide structure by an alkylene or heteroalkylene linking group.
- Inventors:
- Issue Date:
- Research Org.:
- Johns Hopkins Univ., Baltimore, MD (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1531790
- Patent Number(s):
- 8963126
- Application Number:
- 12/743,977
- Assignee:
- The Johns Hopkins University (Baltimore, MD)
- Patent Classifications (CPCs):
-
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01G - CAPACITORS
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
- Resource Type:
- Patent
- Resource Relation:
- Patent File Date: 2009-01-07
- Country of Publication:
- United States
- Language:
- English
Citation Formats
Katz, Howard Edan, Pal, Bhola Nath, See, Kevin Cua, and Jung, Byung-Jun. Low-voltage, N-channel transistors including a hybrid semiconductor-dielectric material. United States: N. p., 2015.
Web.
Katz, Howard Edan, Pal, Bhola Nath, See, Kevin Cua, & Jung, Byung-Jun. Low-voltage, N-channel transistors including a hybrid semiconductor-dielectric material. United States.
Katz, Howard Edan, Pal, Bhola Nath, See, Kevin Cua, and Jung, Byung-Jun. Tue .
"Low-voltage, N-channel transistors including a hybrid semiconductor-dielectric material". United States. https://www.osti.gov/servlets/purl/1531790.
@article{osti_1531790,
title = {Low-voltage, N-channel transistors including a hybrid semiconductor-dielectric material},
author = {Katz, Howard Edan and Pal, Bhola Nath and See, Kevin Cua and Jung, Byung-Jun},
abstractNote = {Hybrid semiconducting-dielectric materials and electronic or electro-optic devices using the hybrid semiconducting-dielectric materials. Hybrid semiconducting-dielectric materials comprise molecules that have a core section that provides an n-type semiconducting property and side chains that provide a dielectric property to a layer of hybrid semiconducting-dielectric material. Specific hybrid semiconducting-dielectric materials include tetracarboxylic diimide compounds having sidechains comprising fluorine substituted aliphatic or aromatic moieties linked to the tetracarboxylic diimide structure by an alkylene or heteroalkylene linking group.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2015},
month = {2}
}
Save to My Library
You must Sign In or Create an Account in order to save documents to your library.
Works referenced in this record:
N-type semiconductor materials for thin film transistors
patent-application, May 2007
- Shukla, Deepak; Freeman, Diane C.; Nelson, Shelby F.
- US Patent Application 11/263111; 20070096084
Field Effect Transistor
patent-application, March 2009
- Aramaki, Shinji; Yoshiyama, Ryuichi; Ohao, Akira
- US Patent Application 11/719096; 20090072224
N,N'-dicycloalkyl-substituted naphthalene-based tetracarboxylic diimide compounds as n-type semiconductor materials for thin film transistors
patent-application, May 2007
- Shukla, Deepak; Freeman, Diane C.; Nelson, Shelby F.
- US Patent Application 11/285238; 20070116895
Wiring Pattern, Electronic Device, Organic Semiconductor Device, Layered Wiring Pattern and Layered Wiring Substrate Using the Wiring Pattern
patent-application, March 2008
- Tomono, Hidenori; Kawashima, Ikue; Suzuki, Koei
- US Patent Application 11/846092; 20080061288
Electret filter media containing filtration enhancing additives
patent, November 1999
- Rousseau, Alan D.; Jones, Marvin E.; Angadjivand, Seyed A.
- US Patent Document 5,976,208
Acene-based organic semiconductor materials and methods of preparing and using the same
patent, February 2011
- Facchetti, Antonio; Marks, Tobin J.; Wang, Zhiming
- US Patent Document 7,892,454
Use of Perylene Diimide Derivatives as Air-Stable N-Channel Organic Semiconductor
patent-application, March 2008
- Koenemann, Martin; Erk, Peter; Gomez, Marcos
- US Patent Application 11/835006; 20080054258
Organic thin film transistor and method of fabricating the same
patent-application, May 2007
- Ahn, Taek; Suh, Min-Chul
- US Patent Application 11/595568; 20070111371
N,N'-di(arylalkyl)-substituted naphthalene-based tetracarboxylic diimide compounds as n-type semiconductor materials for thin film transistors
patent-application, October 2006
- Shukla, Deepak; Nelson, Shelby F.; Freeman, Diane C.
- US Patent Application 11/110076; 20060237712
Novel Imide Derivative, Material For Organic Electroluminescent Device And Organic Electroluminescent Device Using The Same
patent-application, July 2007
- Morishita, Hironobu; Kawamura, Hisayuki; Hosokawa, Chishio
- US Patent Application 11/619787; 20070160905