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Title: Graphene layer formation at low substrate temperature on a metal and carbon based substrate

Abstract

A system and method for forming graphene layers on a substrate. The system and methods include direct growth of graphene on diamond and low temperature growth of graphene using a solid carbon source.

Inventors:
Issue Date:
Research Org.:
Argonne National Lab. (ANL), Argonne, IL (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1531780
Patent Number(s):
8906772
Application Number:
13/481,110
Assignee:
UChicago Argonne, LLC (Chicago, IL)
Patent Classifications (CPCs):
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
B - PERFORMING OPERATIONS B82 - NANOTECHNOLOGY B82Y - SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES
DOE Contract Number:  
AC02-06CH11357; W-31-109-ENG-38
Resource Type:
Patent
Resource Relation:
Patent File Date: 2012-05-25
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY

Citation Formats

Sumant, Anirudha V. Graphene layer formation at low substrate temperature on a metal and carbon based substrate. United States: N. p., 2014. Web.
Sumant, Anirudha V. Graphene layer formation at low substrate temperature on a metal and carbon based substrate. United States.
Sumant, Anirudha V. Tue . "Graphene layer formation at low substrate temperature on a metal and carbon based substrate". United States. https://www.osti.gov/servlets/purl/1531780.
@article{osti_1531780,
title = {Graphene layer formation at low substrate temperature on a metal and carbon based substrate},
author = {Sumant, Anirudha V.},
abstractNote = {A system and method for forming graphene layers on a substrate. The system and methods include direct growth of graphene on diamond and low temperature growth of graphene using a solid carbon source.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2014},
month = {12}
}

Patent:

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