Identifying new semiconductor detector materials by D.C. ionization conductivity
Abstract
Herein is described a method for identifying semiconductor radiation detector materials based on the mobility of internally generated electrons and holes. It was designed for the early stages of exploration, when samples are not available as single crystals, but as crystalline powders. Samples are confined under pressure in an electric field and the increase in current resulting from exposure to a high-intensity source of ionization current (e.g., 60Co gamma rays) is measured. A pressure cell device is described herein to carry out the method. For known semiconductors, the d.c. ionization current depends on voltage according to the Hecht equation, and for known insulators the d.c. ionization current is below detection limits. This shows that the method can identify semiconductors in spite of significant carrier trapping. Using this method and pressure cell, it was determined that new materials BiOI, PbIF, BiPbO2Cl, BiPbO2Br, BiPbO2I, Bi2GdO4Cl, Pb3O2I2, and Pb5O4I2 are semiconductors.
- Inventors:
- Issue Date:
- Research Org.:
- Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1531767
- Patent Number(s):
- 8304748
- Application Number:
- 12/091,045
- Assignee:
- The Regents of the University of California (Oakland, CA)
- Patent Classifications (CPCs):
-
G - PHYSICS G01 - MEASURING G01N - INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
- DOE Contract Number:
- AC02-05CH11231; R01 EB00339
- Resource Type:
- Patent
- Resource Relation:
- Patent File Date: 2006-10-19
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE
Citation Formats
Derenzo, Stephen E., Bourret-Courchesne, Edith, Porter-Chapman, Yetta D., James, Floyd J., Klintenberg, Mattias K., and Wang, Jie. Identifying new semiconductor detector materials by D.C. ionization conductivity. United States: N. p., 2012.
Web.
Derenzo, Stephen E., Bourret-Courchesne, Edith, Porter-Chapman, Yetta D., James, Floyd J., Klintenberg, Mattias K., & Wang, Jie. Identifying new semiconductor detector materials by D.C. ionization conductivity. United States.
Derenzo, Stephen E., Bourret-Courchesne, Edith, Porter-Chapman, Yetta D., James, Floyd J., Klintenberg, Mattias K., and Wang, Jie. Tue .
"Identifying new semiconductor detector materials by D.C. ionization conductivity". United States. https://www.osti.gov/servlets/purl/1531767.
@article{osti_1531767,
title = {Identifying new semiconductor detector materials by D.C. ionization conductivity},
author = {Derenzo, Stephen E. and Bourret-Courchesne, Edith and Porter-Chapman, Yetta D. and James, Floyd J. and Klintenberg, Mattias K. and Wang, Jie},
abstractNote = {Herein is described a method for identifying semiconductor radiation detector materials based on the mobility of internally generated electrons and holes. It was designed for the early stages of exploration, when samples are not available as single crystals, but as crystalline powders. Samples are confined under pressure in an electric field and the increase in current resulting from exposure to a high-intensity source of ionization current (e.g., 60Co gamma rays) is measured. A pressure cell device is described herein to carry out the method. For known semiconductors, the d.c. ionization current depends on voltage according to the Hecht equation, and for known insulators the d.c. ionization current is below detection limits. This shows that the method can identify semiconductors in spite of significant carrier trapping. Using this method and pressure cell, it was determined that new materials BiOI, PbIF, BiPbO2Cl, BiPbO2Br, BiPbO2I, Bi2GdO4Cl, Pb3O2I2, and Pb5O4I2 are semiconductors.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Nov 06 00:00:00 EST 2012},
month = {Tue Nov 06 00:00:00 EST 2012}
}
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