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Title: Real time measurement of shock pressure

Abstract

A fiber-based optical pressure-sensor, made using semiconductor nanocrystal quantum dots (NQDs) as the active transducing material, provides response time fast enough for shock wave measurements. For NQDs, the shift in band gap as a result of applied pressure can be observed as a shift of the photoluminescence (PL) peak. Further, the shift of the principal absorbance feature allows pressure measurements faster than those obtainable by following the PL peak.

Inventors:
; ; ; ;
Issue Date:
Research Org.:
Los Alamos National Lab. (LANL), Los Alamos, NM (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1531727
Patent Number(s):
8,135,244
Application Number:
11/939,580
Assignee:
The United States of America as represented by the United States Deparment of Energy (Washington, DC)
DOE Contract Number:  
AC52-06NA25396
Resource Type:
Patent
Resource Relation:
Patent File Date: 2007-11-14
Country of Publication:
United States
Language:
English

Citation Formats

Sander, Robert K., Zhuravlev, Kirill K., Schaller, Richard D., Pietryga, Jeffrey M., and Whitehead, Michael. Real time measurement of shock pressure. United States: N. p., 2012. Web.
Sander, Robert K., Zhuravlev, Kirill K., Schaller, Richard D., Pietryga, Jeffrey M., & Whitehead, Michael. Real time measurement of shock pressure. United States.
Sander, Robert K., Zhuravlev, Kirill K., Schaller, Richard D., Pietryga, Jeffrey M., and Whitehead, Michael. Tue . "Real time measurement of shock pressure". United States. https://www.osti.gov/servlets/purl/1531727.
@article{osti_1531727,
title = {Real time measurement of shock pressure},
author = {Sander, Robert K. and Zhuravlev, Kirill K. and Schaller, Richard D. and Pietryga, Jeffrey M. and Whitehead, Michael},
abstractNote = {A fiber-based optical pressure-sensor, made using semiconductor nanocrystal quantum dots (NQDs) as the active transducing material, provides response time fast enough for shock wave measurements. For NQDs, the shift in band gap as a result of applied pressure can be observed as a shift of the photoluminescence (PL) peak. Further, the shift of the principal absorbance feature allows pressure measurements faster than those obtainable by following the PL peak.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2012},
month = {3}
}

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Works referenced in this record:

Optical fibre with quantum dots
patent, March 1999


Ultra-fast detectors using doped nanocrystal insulators
patent, August 1995


Optical high pressure sensor
patent, March 1994


Photon source
patent, March 2006


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