skip to main content
DOE Patents title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Nanocrystal structures

Abstract

A structure including a grating and a semiconductor nanocrystal layer on the grating, can be a laser. The semiconductor nanocrystal layer can include a plurality of semiconductor nanocrystals including a Group II-VI compound, the nanocrystals being distributed in a metal oxide matrix. The grating can have a periodicity from 200 nm to 500 nm.

Inventors:
; ; ; ; ;
Issue Date:
Research Org.:
Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1531722
Patent Number(s):
8,121,162
Application Number:
12/275,800
Assignee:
Massachusetts Institute of Technology (Cambridge, MA)
DOE Contract Number:  
W-7405-ENG-36
Resource Type:
Patent
Resource Relation:
Patent File Date: 2008-11-21
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 77 NANOSCIENCE AND NANOTECHNOLOGY

Citation Formats

Eisler, Hans J., Sundar, Vikram C., Walsh, Michael E., Klimov, Victor I., Bawendi, Moungi G., and Smith, Henry I. Nanocrystal structures. United States: N. p., 2012. Web.
Eisler, Hans J., Sundar, Vikram C., Walsh, Michael E., Klimov, Victor I., Bawendi, Moungi G., & Smith, Henry I. Nanocrystal structures. United States.
Eisler, Hans J., Sundar, Vikram C., Walsh, Michael E., Klimov, Victor I., Bawendi, Moungi G., and Smith, Henry I. Tue . "Nanocrystal structures". United States. https://www.osti.gov/servlets/purl/1531722.
@article{osti_1531722,
title = {Nanocrystal structures},
author = {Eisler, Hans J. and Sundar, Vikram C. and Walsh, Michael E. and Klimov, Victor I. and Bawendi, Moungi G. and Smith, Henry I.},
abstractNote = {A structure including a grating and a semiconductor nanocrystal layer on the grating, can be a laser. The semiconductor nanocrystal layer can include a plurality of semiconductor nanocrystals including a Group II-VI compound, the nanocrystals being distributed in a metal oxide matrix. The grating can have a periodicity from 200 nm to 500 nm.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2012},
month = {2}
}

Patent:

Save / Share:

Works referenced in this record:

Transition-metal doped sulfide, selenide, and telluride laser crystal and lasers
patent, July 1996


Nanocrystal structures
patent, December 2006


Glass matrix doped with activated luminescent nanocrystalline particles
patent, December 1996


Light emitting device
patent, June 1995


Semiconductor laser and a method for fabricating the same
patent, March 1996


Optical amplifiers and lasers
patent, November 2004


Highly luminescent color-selective materials and method of making thereof
patent, March 2001


Method of making semiconductor quantum dot light emitting/detecting devices
patent, October 1994


Preparation of III-V semiconductor nanocrystals
patent, April 1996


Up-converting reporters for biological and other assays using laser excitation techniques
patent, October 1997


Method of manufacturing encapsulated doped particles
patent, June 1996


Water-soluble fluorescent nanocrystals
patent, June 2001


Low temperature thin films formed from nanocrystal precursors
patent, November 1993


Quantum dot Laser
patent, November 1993


Optical memory device
patent, January 2002


Optical dispersion compensator
patent, August 2003


Semiconductor laser with ZnMgSSe cladding layers
patent, May 1996


Semiconductor quantum dot light emitting/detecting devices
patent, March 1994


Electrochemical synthesis of quasi-periodic quantum dot and nanostructure arrays
patent, May 1998


    Works referencing / citing this record:

    Nanocomposite and method of making thereof
    patent, March 2016