Title: Epitaxial growth of in-plane nanowires and nanowire devices

Abstract

Exemplary embodiments provide semiconductor nanowires and nanowire devices/applications and methods for their formation. In embodiments, in-plane nanowires can be epitaxially grown on a patterned substrate, which are more favorable than vertical ones for device processing and three-dimensional (3D) integrated circuits. In embodiments, the in-plane nanowire can be formed by selective epitaxy utilizing lateral overgrowth and faceting of an epilayer initially grown in a one-dimensional (1D) nanoscale opening. In embodiments, optical, electrical, and thermal connections can be established and controlled between the nanowire, the substrate, and additional electrical or optical components for better device and system performance.

Inventors:

Lee, Seung Chang; Brueck, Steven R. J.

Issue Date:

Tue Oct 04 00:00:00 EDT 2011

Research Org.:

STC.UNM, Albuquerque, NM (United States)

Sponsoring Org.:

USDOE

OSTI Identifier:

1531699

Patent Number(s):

8030108

Application Number:

12/492,265

Assignee:

STC.UNM (Albuquerque, NM)

Patent Classifications (CPCs):

B - PERFORMING OPERATIONS B82 - NANOTECHNOLOGY B82Y - SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

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B - PERFORMING OPERATIONS B82 - NANOTECHNOLOGY B82Y - SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES

B82Y10/00 - Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
B82Y40/00 - Manufacture or treatment of nanostructures
B82Y99/00 - Subject matter not provided for in other groups of this subclass

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

H01L21/0237 - {Materials}
H01L21/02439 - {Materials}
H01L21/02507 - {Alternating layers, e.g. superlattice}
H01L21/02521 - {Materials}
H01L21/02603 - {Nanowires}
H01L21/02639 - {Preparation of substrate for selective deposition}
H01L29/0665 - {the shape of the body defining a nanostructure
H01L29/0673 - {oriented parallel to a substrate}
H01L29/127 - {Quantum box structures}
H01L29/158 - {Structures without potential periodicity in a direction perpendicular to a major surface of the substrate, i.e. vertical direction, e.g. lateral superlattices, lateral surface superlattices [LSS]}
H01L29/7783 - {using III-V semiconductor material}
H01L29/7853 - {the body having a non-rectangular crossection}
H01L33/06 - within the light emitting region, e.g. quantum confinement structure or tunnel barrier
H01L33/18 - within the light emitting region

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01S - DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT

H01S5/32 - comprising PN junctions, e.g. hetero- or double- heterostructures

Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC Y10S - TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS

Y10S977/951 - Laser
Y10S977/962 - for carrying or transporting

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DOE Contract Number:  

50615

Resource Type:

Patent

Resource Relation:

Patent File Date: 2009-06-26

Country of Publication:

United States

Language:

English