Atomic layer deposition for functionalizing colloidal and semiconductor particles
Abstract
A method for producing a product of a functionalized nanocomposition colloidal material using atomic layer deposition to coat the colloidal material. The ALD layer comprises an inorganic material which enables improved optical and electrical properties for the nanocomposite.
- Inventors:
- Issue Date:
- Research Org.:
- Argonne National Laboratory (ANL), Argonne, IL (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1531695
- Patent Number(s):
- 8012860
- Application Number:
- 12/485,784
- Assignee:
- UChicago Argonne, LLC (Chicago, IL)
- Patent Classifications (CPCs):
-
B - PERFORMING OPERATIONS B82 - NANOTECHNOLOGY B82Y - SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
- DOE Contract Number:
- AC02-06CH11357; W-31-109-ENG-38
- Resource Type:
- Patent
- Resource Relation:
- Patent File Date: 2009-06-16
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; 77 NANOSCIENCE AND NANOTECHNOLOGY
Citation Formats
Elam, Jeffrey W., and Guyot-Sionnest, Philippe. Atomic layer deposition for functionalizing colloidal and semiconductor particles. United States: N. p., 2011.
Web.
Elam, Jeffrey W., & Guyot-Sionnest, Philippe. Atomic layer deposition for functionalizing colloidal and semiconductor particles. United States.
Elam, Jeffrey W., and Guyot-Sionnest, Philippe. Tue .
"Atomic layer deposition for functionalizing colloidal and semiconductor particles". United States. https://www.osti.gov/servlets/purl/1531695.
@article{osti_1531695,
title = {Atomic layer deposition for functionalizing colloidal and semiconductor particles},
author = {Elam, Jeffrey W. and Guyot-Sionnest, Philippe},
abstractNote = {A method for producing a product of a functionalized nanocomposition colloidal material using atomic layer deposition to coat the colloidal material. The ALD layer comprises an inorganic material which enables improved optical and electrical properties for the nanocomposite.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Sep 06 00:00:00 EDT 2011},
month = {Tue Sep 06 00:00:00 EDT 2011}
}
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Nanocrystal structures
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- US Patent Document 7,470,473
Highly luminescent color selective nanocrystalline materials
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- Bawendi, Moungi G.; Jensen, Klaus F.; Dabbousi, Bashir O.
- US Patent Document 6,861,155