DOE Patents title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Rare earth-activated aluminum nitride powders and method of making

Abstract

Rare earth-activated aluminum nitride powders are made using a solution-based approach to form a mixed hydroxide of aluminum and a rare earth metal, the mixed hydroxide is then converted into an ammonium metal fluoride, preferably a rare earth-substituted ammonium aluminum hexafluoride ((NH4)3Al1-xRExF6), and finally the rare earth-activated aluminum nitride is formed by ammonolysis of the ammonium metal fluoride at a high temperature. The use of a fluoride precursor in this process avoids sources of oxygen during the final ammonolysis step which is a major source of defects in the powder synthesis of nitrides. Also, because the aluminum nitride is formed from a mixed hydroxide co-precipitate, the distribution of the dopants in the powder is substantially homogeneous in each particle.

Inventors:
; ; ; ; ;
Issue Date:
Research Org.:
Osram Sylvania Inc., Danvers, MA (United States); Univ. of California, La Jolla, CA (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1531680
Patent Number(s):
7935325
Application Number:
12/161,017
Assignee:
Osram Sylvania Inc. (Danvers, MA); The Regents of the University of California (La Jolla, CA)
Patent Classifications (CPCs):
C - CHEMISTRY C01 - INORGANIC CHEMISTRY C01B - NON-METALLIC ELEMENTS
C - CHEMISTRY C01 - INORGANIC CHEMISTRY C01P - INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
DOE Contract Number:  
FC26-04NT42274
Resource Type:
Patent
Resource Relation:
Patent File Date: 2006-12-20
Country of Publication:
United States
Language:
English

Citation Formats

Han, Bing, Tao, Jonathan H., Raukas, Madis, Klinedinst, Keith A., Talbot, Jan B., and Mishra, Kailash A.. Rare earth-activated aluminum nitride powders and method of making. United States: N. p., 2011. Web.
Han, Bing, Tao, Jonathan H., Raukas, Madis, Klinedinst, Keith A., Talbot, Jan B., & Mishra, Kailash A.. Rare earth-activated aluminum nitride powders and method of making. United States.
Han, Bing, Tao, Jonathan H., Raukas, Madis, Klinedinst, Keith A., Talbot, Jan B., and Mishra, Kailash A.. Tue . "Rare earth-activated aluminum nitride powders and method of making". United States. https://www.osti.gov/servlets/purl/1531680.
@article{osti_1531680,
title = {Rare earth-activated aluminum nitride powders and method of making},
author = {Han, Bing and Tao, Jonathan H. and Raukas, Madis and Klinedinst, Keith A. and Talbot, Jan B. and Mishra, Kailash A.},
abstractNote = {Rare earth-activated aluminum nitride powders are made using a solution-based approach to form a mixed hydroxide of aluminum and a rare earth metal, the mixed hydroxide is then converted into an ammonium metal fluoride, preferably a rare earth-substituted ammonium aluminum hexafluoride ((NH4)3Al1-xRExF6), and finally the rare earth-activated aluminum nitride is formed by ammonolysis of the ammonium metal fluoride at a high temperature. The use of a fluoride precursor in this process avoids sources of oxygen during the final ammonolysis step which is a major source of defects in the powder synthesis of nitrides. Also, because the aluminum nitride is formed from a mixed hydroxide co-precipitate, the distribution of the dopants in the powder is substantially homogeneous in each particle.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2011},
month = {5}
}

Works referenced in this record:

Method for producing a nitride semiconductor element
patent, July 2005


Nitride semiconductor element with a supporting substrate and a method for producing a nitride semiconductor element
patent-application, July 2003


Semiconductor supporting device
patent, April 2000


Room temperature synthesis of GaN nanopowder
patent-application, December 2007


Preparation and optical spectroscopy of Eu3+-doped GaN luminescent semiconductor from freeze-dried precursors
journal, November 2004


Rare earth fluoride additive for sintering aluminum nitride
patent, March 1989


Process for preparing high purity aluminum nitride
patent, February 1989


Synthesis of nanocrystalline aluminum–gallium nitride (Al x Ga 1− x N; x = 0.1 to 0.5) with oxide precursors via ammonolysis
journal, October 2003


A novel method for the synthesis of sub-microcrystalline wurtzite-type InxGa1−xN powders
journal, March 2002


    Works referencing / citing this record:

    Fluorescent lighting with aluminum nitride phosphors
    patent, May 2016