Device containing non-blinking quantum dots

Title: Device containing non-blinking quantum dots

Abstract

An optoelectronic device including two spaced apart electrodes; and at least one layer containing ternary core/shell nanocrystals disposed between the spaced electrodes and having ternary semiconductor cores containing a gradient in alloy composition and wherein the ternary core/shell nanocrystals exhibit single molecule non-blinking behavior characterized by on times greater than one minute or radiative lifetimes less than 10 ns.

Inventors:: Kahen, Keith B.; Ren, Xiaofan

Issue Date:: 2010-08-17

Research Org.:: Eastman Kodak Company, Rochester, NY (United States)

Sponsoring Org.:: USDOE

OSTI Identifier:: 1531647

Patent Number(s):: 7777233

Application Number:: 11/928,292

Assignee:: Eastman Kodak Company (Rochester, NY)

Patent Classifications (CPCs):: C - CHEMISTRY C09 - DYES C09K - MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE

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C - CHEMISTRY C09 - DYES C09K - MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
C09K11/025 - {Use of non-luminescent materials other than binders}
C09K11/883 - {with zinc or cadmium}

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DOE Contract Number:: FC26-06NT42864

Resource Type:: Patent

Resource Relation:: Patent File Date: 2007-10-30

Country of Publication:: United States

Language:: English

Subject:: 77 NANOSCIENCE AND NANOTECHNOLOGY; 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 42 ENGINEERING

Citation Formats


                    Kahen, Keith B., and Ren, Xiaofan. Device containing non-blinking quantum dots.  United States: N. p., 2010. 
        Web.

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                    Kahen, Keith B., & Ren, Xiaofan. Device containing non-blinking quantum dots.  United States.

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                    Kahen, Keith B., and Ren, Xiaofan. Tue .  
        "Device containing non-blinking quantum dots".  United States.  https://www.osti.gov/servlets/purl/1531647.

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@article{osti_1531647,

  title        = {Device containing non-blinking quantum dots},

  author       = {Kahen, Keith B. and Ren, Xiaofan},

  abstractNote = {An optoelectronic device including two spaced apart electrodes; and at least one layer containing ternary core/shell nanocrystals disposed between the spaced electrodes and having ternary semiconductor cores containing a gradient in alloy composition and wherein the ternary core/shell nanocrystals exhibit single molecule non-blinking behavior characterized by on times greater than one minute or radiative lifetimes less than 10 ns.},

  doi          = {},

  journal      = {},
number       = ,

  volume       = ,

  place        = {United States},

  year         = {2010},

  month        = {8}

}

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Title: Device containing non-blinking quantum dots

Abstract

Citation Formats

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Ternary and quarternary nanocrystals, processes for their production and uses thereof patent, June 2006

Synthesis and characterization of nearly monodisperse CdE (E = sulfur, selenium, tellurium) semiconductor nanocrystallites journal, September 1993

Nanocrystal-Based Light-Emitting Diodes Utilizing High-Efficiency Nonradiative Energy Transfer for Color Conversion journal, July 2006

Nanostructure and nanocomposite based compositions and photovoltaic devices patent-application, September 2005

Memory in quantum-dot photoluminescence blinking journal, January 2005

Light-emitting nanoparticles and method of making same patent-application, January 2003

Electroluminescence from heterostructures of poly(phenylene vinylene) and inorganic CdSe nanocrystals journal, June 1998

Preparation of stable, bright luminescent nanoparticles having compositionally engineered properties patent-application,

Organic electroluminescent diodes journal, September 1987

Nanoscale wires and related devices patent-application, August 2006

Single Nonblinking CdTe Quantum Dots Synthesized in Aqueous Thiopropionic Acid journal, November 2006

Water-Soluble Quantum Dots for Multiphoton Fluorescence Imaging in Vivo journal, May 2003

Fluorescence intermittency in single cadmium selenide nanocrystals journal, October 1996

Near-Complete Suppression of Quantum Dot Blinking in Ambient Conditions journal, February 2004

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Multicolor Light-Emitting Diodes Based on Semiconductor Nanocrystals Encapsulated in GaN Charge Injection Layers journal, June 2005

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patent, June 2006

Synthesis and characterization of nearly monodisperse CdE (E = sulfur, selenium, tellurium) semiconductor nanocrystallites
journal, September 1993

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journal, July 2006

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Electroluminescence from heterostructures of poly(phenylene vinylene) and inorganic CdSe nanocrystals
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journal, November 2006

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Fluorescence intermittency in single cadmium selenide nanocrystals
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Near-Complete Suppression of Quantum Dot Blinking in Ambient Conditions
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Multicolor Light-Emitting Diodes Based on Semiconductor Nanocrystals Encapsulated in GaN Charge Injection Layers
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Study of conduction mechanism and electroluminescence in CdSe/ZnS quantum dot composites
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