Ex-situ doped semiconductor transport layer
Abstract
A method of making an ex-situ doped semiconductor transport layer for use in an electronic device includes: growing a first set of semiconductor nanoparticles having surface organic ligands in a colloidal solution; growing a second set of dopant material nanoparticles having surface organic ligands in a colloidal solution; depositing a mixture of the first set of semiconductor nanoparticles and the second set of dopant material nanoparticles on a surface, wherein there are more semiconductor nanoparticles than dopant material nanoparticles; performing a first anneal of the deposited mixture of nanoparticles so that the organic ligands boil off the surfaces of the first and second set of nanoparticles; performing a second anneal of the deposited mixture so that the semiconductor nanoparticles fuse to form a continuous semiconductor layer and the dopant material atoms diffuse out from the dopant material nanoparticles and into the continuous semiconductor layer.
- Inventors:
- Issue Date:
- Research Org.:
- Eastman Kodak Company, Rochester, NY (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1531557
- Patent Number(s):
- 7375011
- Application Number:
- 11/677,794
- Assignee:
- Eastman Kodak Company (Rochester, NY)
- Patent Classifications (CPCs):
-
Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC Y10S - TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
- DOE Contract Number:
- FC26-06NT42864
- Resource Type:
- Patent
- Resource Relation:
- Patent File Date: 2007-02-22
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 77 NANOSCIENCE AND NANOTECHNOLOGY
Citation Formats
Kahen, Keith B. Ex-situ doped semiconductor transport layer. United States: N. p., 2008.
Web.
Kahen, Keith B. Ex-situ doped semiconductor transport layer. United States.
Kahen, Keith B. Tue .
"Ex-situ doped semiconductor transport layer". United States. https://www.osti.gov/servlets/purl/1531557.
@article{osti_1531557,
title = {Ex-situ doped semiconductor transport layer},
author = {Kahen, Keith B.},
abstractNote = {A method of making an ex-situ doped semiconductor transport layer for use in an electronic device includes: growing a first set of semiconductor nanoparticles having surface organic ligands in a colloidal solution; growing a second set of dopant material nanoparticles having surface organic ligands in a colloidal solution; depositing a mixture of the first set of semiconductor nanoparticles and the second set of dopant material nanoparticles on a surface, wherein there are more semiconductor nanoparticles than dopant material nanoparticles; performing a first anneal of the deposited mixture of nanoparticles so that the organic ligands boil off the surfaces of the first and second set of nanoparticles; performing a second anneal of the deposited mixture so that the semiconductor nanoparticles fuse to form a continuous semiconductor layer and the dopant material atoms diffuse out from the dopant material nanoparticles and into the continuous semiconductor layer.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2008},
month = {5}
}
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