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Title: Pattern transfer with self-similar sacrificial mask layer and vector magnetic field sensor

Abstract

A method is provided for producing a lithographic pattern using a mask that includes the same materials as the material to be etched, allowing the pattern to be transferred and the etch mask to be removed in one step. In accordance with features of the invention, the method includes building up of a layer or layers of material of specific thickness on top of a substrate so that temporal control of an etching process allows formation of the desired pattern. Different exchange bias directions can be established by the use of shape anisotropy for the exchange biased component of a spin valve device. This enables several different magnetic reference directions to be present on a single chip, which allows a more compact magnetic field sensor to be developed. In accordance with features of the invention, different field directions are established on one single chip by using shape anisotropy.

Inventors:
Issue Date:
Research Org.:
UChicago Argonne, LLC, Chicago, IL (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1531546
Patent Number(s):
7,323,113
Application Number:
10/980,507
Assignee:
UChicago Argonne, LLC (Chicago, IL)
DOE Contract Number:  
W-31-109-ENG-38
Resource Type:
Patent
Resource Relation:
Patent File Date: 2004-11-03
Country of Publication:
United States
Language:
English

Citation Formats

Hoffmann, Axel. Pattern transfer with self-similar sacrificial mask layer and vector magnetic field sensor. United States: N. p., 2008. Web.
Hoffmann, Axel. Pattern transfer with self-similar sacrificial mask layer and vector magnetic field sensor. United States.
Hoffmann, Axel. Tue . "Pattern transfer with self-similar sacrificial mask layer and vector magnetic field sensor". United States. https://www.osti.gov/servlets/purl/1531546.
@article{osti_1531546,
title = {Pattern transfer with self-similar sacrificial mask layer and vector magnetic field sensor},
author = {Hoffmann, Axel},
abstractNote = {A method is provided for producing a lithographic pattern using a mask that includes the same materials as the material to be etched, allowing the pattern to be transferred and the etch mask to be removed in one step. In accordance with features of the invention, the method includes building up of a layer or layers of material of specific thickness on top of a substrate so that temporal control of an etching process allows formation of the desired pattern. Different exchange bias directions can be established by the use of shape anisotropy for the exchange biased component of a spin valve device. This enables several different magnetic reference directions to be present on a single chip, which allows a more compact magnetic field sensor to be developed. In accordance with features of the invention, different field directions are established on one single chip by using shape anisotropy.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2008},
month = {1}
}

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