Coating silicon pellets with dopant for addition of dopant in crystal growth
Abstract
An inexpensive method of coating silicon shot with boron atoms comprises (1) immersing silicon shot in an aqueous solution comprising a boric acid and polyvinyl alcohol, and (2) heating the solution so as to evaporate water and form a polymerized polyvinyl alcohol coating containing boron on the shot. A precise amount of this coated shot may then be mixed with a measured quantity of intrinsic silicon pellets and the resulting mixture may then be melted to provide a boron-doped silicon melt for use in growing p-type silicon bodies that can be converted to substrates for photovoltaic solar cells.
- Inventors:
- Issue Date:
- Research Org.:
- Schott Scholar, Inc., Billerica, MA (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1531518
- Patent Number(s):
- 7135069
- Application Number:
- 10/793,539
- Assignee:
- Schott Solar, Inc. (Billerica, MA)
- Patent Classifications (CPCs):
-
C - CHEMISTRY C30 - CRYSTAL GROWTH C30B - SINGLE-CRYSTAL-GROWTH
- DOE Contract Number:
- ZAX-8-17647-10
- Resource Type:
- Patent
- Resource Relation:
- Patent File Date: 2004-03-04
- Country of Publication:
- United States
- Language:
- English
Citation Formats
Piwczyk, Bernhard P. Coating silicon pellets with dopant for addition of dopant in crystal growth. United States: N. p., 2006.
Web.
Piwczyk, Bernhard P. Coating silicon pellets with dopant for addition of dopant in crystal growth. United States.
Piwczyk, Bernhard P. Tue .
"Coating silicon pellets with dopant for addition of dopant in crystal growth". United States. https://www.osti.gov/servlets/purl/1531518.
@article{osti_1531518,
title = {Coating silicon pellets with dopant for addition of dopant in crystal growth},
author = {Piwczyk, Bernhard P.},
abstractNote = {An inexpensive method of coating silicon shot with boron atoms comprises (1) immersing silicon shot in an aqueous solution comprising a boric acid and polyvinyl alcohol, and (2) heating the solution so as to evaporate water and form a polymerized polyvinyl alcohol coating containing boron on the shot. A precise amount of this coated shot may then be mixed with a measured quantity of intrinsic silicon pellets and the resulting mixture may then be melted to provide a boron-doped silicon melt for use in growing p-type silicon bodies that can be converted to substrates for photovoltaic solar cells.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Nov 14 00:00:00 EST 2006},
month = {Tue Nov 14 00:00:00 EST 2006}
}
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- US Patent Document 9,126,290
Boron diffusion in silicon devices
patent, September 2010
- Rohatgi, Ajeet; Kim, Dong-Seop; Nakayashiki, Kenta
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