Title: Pulsed ion beam control of solid state features

Abstract

For controlling a physical dimension of a solid state structural feature, a solid state structure is provided, having a surface and having a structural feature. The structure is exposed to a first periodic flux of ions having a first exposure duty cycle characterized by a first ion exposure duration and a first nonexposure duration for the first duty cycle, and then at a second periodic flux of ions having a second exposure duty cycle characterized by a second ion exposure duration and a second nonexposure duration that is greater than the first nonexposure duration, for the second duty cycle, to cause transport, within the structure including the structure surface, of material of the structure to the structural feature in response to the ion flux exposure to change at least one physical dimension of the feature substantially by locally adding material of the structure to the feature.

Inventors:

Golovchenko, Jene A.; Stein, Derek M.; Li, Jiali

Issue Date:

2006-10-10

Research Org.:

Harvard Univ., Cambridge, MA (United States)

Sponsoring Org.:

USDOE

OSTI Identifier:

1531515

Patent Number(s):

7118657

Application Number:

10/695,381

Assignee:

President and Fellows of Harvard College (Cambridge, MA)

Patent Classifications (CPCs):

B - PERFORMING OPERATIONS B81 - MICROSTRUCTURAL TECHNOLOGY B81C - PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

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B - PERFORMING OPERATIONS B81 - MICROSTRUCTURAL TECHNOLOGY B81C - PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS

B81C2201/0143 - Focussed beam, i.e. laser, ion or e-beam

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

H01L22/26 - {Acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection, in-situ thickness measurement
H01L2924/00 - Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00

B - PERFORMING OPERATIONS B81 - MICROSTRUCTURAL TECHNOLOGY B81C - PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS

B81C99/004 - {during manufacturing}

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

H01L2924/0002 - Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

B - PERFORMING OPERATIONS B81 - MICROSTRUCTURAL TECHNOLOGY B81C - PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS

B81C1/00626 - {Processes for achieving a desired geometry not provided for in groups B81C1/00563 - B81C1/00619}

G - PHYSICS G01 - MEASURING G01N - INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES

G01N33/48721 - {Investigating individual macromolecules, e.g. by translocation through nanopores

B - PERFORMING OPERATIONS B01 - PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL B01L - CHEMICAL OR PHYSICAL LABORATORY APPARATUS FOR GENERAL USE

B01L3/5027 - {by integrated microfluidic structures, i.e. dimensions of channels and chambers are such that surface tension forces are important, e.g. lab-on-a-chip

B - PERFORMING OPERATIONS B24 - GRINDING B24B - MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING

B24B37/013 - Devices or means for detecting lapping completion

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DOE Contract Number:  

F49620-01-1-0467; FG02-01ER45922; DMR-0073590

Resource Type:

Patent

Resource Relation:

Patent File Date: 2003-10-28

Country of Publication:

United States

Language:

English