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Title: Method of using a germanium layer transfer to Si for photovoltaic applications and heterostructure made thereby

Abstract

Ge/Si and other nonsilicon film heterostructures are formed by hydrogen-induced exfoliation of the Ge film which is wafer bonded to a cheaper substrate, such as Si. A thin, single-crystal layer of Ge is transferred to Si substrate. The bond at the interface of the Ge/Si heterostructures is covalent to ensure good thermal contact, mechanical strength, and to enable the formation of an ohmic contact between the Si substrate and Ge layers. To accomplish this type of bond, hydrophobic wafer bonding is used, because as the invention demonstrates the hydrogen-surface-terminating species that facilitate van der Waals bonding evolves at temperatures above 600° C. into covalent bonding in hydrophobically bound Ge/Si layer transferred systems.

Inventors:
;
Issue Date:
Research Org.:
California Inst. of Technology, Pasadena, CA (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1531507
Patent Number(s):
7,019,339
Application Number:
10/125,133
Assignee:
California Institute of Technology (Pasadena, CA)
DOE Contract Number:  
ACQ-1-30619-13
Resource Type:
Patent
Resource Relation:
Patent File Date: 2002-04-17
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 14 SOLAR ENERGY

Citation Formats

Atwater, Jr., Harry A., and Zahler, James M. Method of using a germanium layer transfer to Si for photovoltaic applications and heterostructure made thereby. United States: N. p., 2006. Web.
Atwater, Jr., Harry A., & Zahler, James M. Method of using a germanium layer transfer to Si for photovoltaic applications and heterostructure made thereby. United States.
Atwater, Jr., Harry A., and Zahler, James M. Tue . "Method of using a germanium layer transfer to Si for photovoltaic applications and heterostructure made thereby". United States. https://www.osti.gov/servlets/purl/1531507.
@article{osti_1531507,
title = {Method of using a germanium layer transfer to Si for photovoltaic applications and heterostructure made thereby},
author = {Atwater, Jr., Harry A. and Zahler, James M.},
abstractNote = {Ge/Si and other nonsilicon film heterostructures are formed by hydrogen-induced exfoliation of the Ge film which is wafer bonded to a cheaper substrate, such as Si. A thin, single-crystal layer of Ge is transferred to Si substrate. The bond at the interface of the Ge/Si heterostructures is covalent to ensure good thermal contact, mechanical strength, and to enable the formation of an ohmic contact between the Si substrate and Ge layers. To accomplish this type of bond, hydrophobic wafer bonding is used, because as the invention demonstrates the hydrogen-surface-terminating species that facilitate van der Waals bonding evolves at temperatures above 600° C. into covalent bonding in hydrophobically bound Ge/Si layer transferred systems.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2006},
month = {3}
}

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Works referenced in this record:

High quality photovoltaic semiconductor material and laser ablation method of fabrication same
patent, July 1993


Method of producing a thin silicon-on-insulator layer
patent, May 1991


Method for producing a thin membrane and resulting structure with membrane
patent, October 2002


Substrate and production method thereof
patent, April 2001


Methods for fabricating a substrate
patent, September 2004


Method of producing sheets of crystalline material and devices made therefrom
patent, June 1993


Preferentially etched epitaxial liftoff of InP material
patent, June 1997


Support-integrated donor wafers for repeated thin donor layer separation
patent, June 2005


Photoelectric converting device
patent, January 2003


Method of producing a thin layer of semiconductor material
patent, February 2000


Method of transferring a thin film to an alternate substrate
patent, February 1995


Method for fabricating singe crystal materials over CMOS devices
patent, June 2001


Method of obtaining a thin film of semiconductor material
patent, August 2000


Transposed split of ion cut materials
patent, February 2002


Support-integrated donor wafers for repeated thin donor layer separation
patent, November 2004


Light valve device making
patent, June 1997


Electronic device with composite substrate
patent, December 2002


Fabrication ultra-thin bonded semiconductor layers
patent, November 2001


Single-crystal material on non-single-crystalline substrate
patent, December 2001


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