Title: Method of using a germanium layer transfer to Si for photovoltaic applications and heterostructure made thereby

Abstract

Ge/Si and other nonsilicon film heterostructures are formed by hydrogen-induced exfoliation of the Ge film which is wafer bonded to a cheaper substrate, such as Si. A thin, single-crystal layer of Ge is transferred to Si substrate. The bond at the interface of the Ge/Si heterostructures is covalent to ensure good thermal contact, mechanical strength, and to enable the formation of an ohmic contact between the Si substrate and Ge layers. To accomplish this type of bond, hydrophobic wafer bonding is used, because as the invention demonstrates the hydrogen-surface-terminating species that facilitate van der Waals bonding evolves at temperatures above 600° C. into covalent bonding in hydrophobically bound Ge/Si layer transferred systems.

Inventors:

Atwater, Jr., Harry A.; Zahler, James M.

Issue Date:

2006-03-28

Research Org.:

California Institute of Technology (CalTech), Pasadena, CA (United States)

Sponsoring Org.:

USDOE

OSTI Identifier:

1531507

Patent Number(s):

7019339

Application Number:

10/125,133

Assignee:

California Institute of Technology (Pasadena, CA)

Patent Classifications (CPCs):

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION

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H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

H01L31/1852 - {comprising a growth substrate not being an AIIIBV compound}
H01L31/0392 - including thin films deposited on metallic or insulating substrates {
H01L21/187 - {by direct bonding}
H01L21/76254 - {with separation/delamination along an ion implanted layer, e.g. Smart-cut, Unibond}
H01L31/0693 - the devices including, apart from doping material or other impurities, only AIIIBV compounds, e.g. GaAs or InP solar cells
H01L31/0687 - Multiple junction or tandem solar cells
H01L31/0304 - including, apart from doping materials or other impurities, only AIIIBV compounds

Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION

Y02E10/544 - Solar cells from Group III-V materials

Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC Y10S - TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS

Y10S438/933 - Germanium or silicon or Ge-Si on III-V

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

H01L31/18 - Processes or apparatus peculiar to the manufacture or treatment of these devices or of parts thereof

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DOE Contract Number:  

ACQ-1-30619-13

Resource Type:

Patent

Resource Relation:

Patent File Date: 2002-04-17

Country of Publication:

United States

Language:

English

Subject:

36 MATERIALS SCIENCE; 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 14 SOLAR ENERGY