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Title: Method of using a germanium layer transfer to Si for photovoltaic applications and heterostructure made thereby

Abstract

Ge/Si and other nonsilicon film heterostructures are formed by hydrogen-induced exfoliation of the Ge film which is wafer bonded to a cheaper substrate, such as Si. A thin, single-crystal layer of Ge is transferred to Si substrate. The bond at the interface of the Ge/Si heterostructures is covalent to ensure good thermal contact, mechanical strength, and to enable the formation of an ohmic contact between the Si substrate and Ge layers. To accomplish this type of bond, hydrophobic wafer bonding is used, because as the invention demonstrates the hydrogen-surface-terminating species that facilitate van der Waals bonding evolves at temperatures above 600° C. into covalent bonding in hydrophobically bound Ge/Si layer transferred systems.

Inventors:
;
Issue Date:
Research Org.:
California Institute of Technology (CalTech), Pasadena, CA (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1531507
Patent Number(s):
7019339
Application Number:
10/125,133
Assignee:
California Institute of Technology (Pasadena, CA)
Patent Classifications (CPCs):
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
DOE Contract Number:  
ACQ-1-30619-13
Resource Type:
Patent
Resource Relation:
Patent File Date: 2002-04-17
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 14 SOLAR ENERGY

Citation Formats

Atwater, Jr., Harry A., and Zahler, James M. Method of using a germanium layer transfer to Si for photovoltaic applications and heterostructure made thereby. United States: N. p., 2006. Web.
Atwater, Jr., Harry A., & Zahler, James M. Method of using a germanium layer transfer to Si for photovoltaic applications and heterostructure made thereby. United States.
Atwater, Jr., Harry A., and Zahler, James M. Tue . "Method of using a germanium layer transfer to Si for photovoltaic applications and heterostructure made thereby". United States. https://www.osti.gov/servlets/purl/1531507.
@article{osti_1531507,
title = {Method of using a germanium layer transfer to Si for photovoltaic applications and heterostructure made thereby},
author = {Atwater, Jr., Harry A. and Zahler, James M.},
abstractNote = {Ge/Si and other nonsilicon film heterostructures are formed by hydrogen-induced exfoliation of the Ge film which is wafer bonded to a cheaper substrate, such as Si. A thin, single-crystal layer of Ge is transferred to Si substrate. The bond at the interface of the Ge/Si heterostructures is covalent to ensure good thermal contact, mechanical strength, and to enable the formation of an ohmic contact between the Si substrate and Ge layers. To accomplish this type of bond, hydrophobic wafer bonding is used, because as the invention demonstrates the hydrogen-surface-terminating species that facilitate van der Waals bonding evolves at temperatures above 600° C. into covalent bonding in hydrophobically bound Ge/Si layer transferred systems.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2006},
month = {3}
}

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