Title: Control of solid state dimensional features

Abstract

A solid state structure having a surface is provided and exposed to a flux, F, of incident ions under conditions that are selected based on: ##EQU1## where C is concentration of mobile adatoms at structure surface, r is vector surface position, t is time, T.sub.1 is number of adatoms created per incident ion, D is adatom diffusivity, .tau..sub.trap is average lifetime of an adatom before adatom annihilation occurs at a structure surface defect characteristic of structure material, and .sigma..sub.C is cross-section for adatom annihilation by incident ions characteristic of selected ion exposure conditions. Ion exposure condition selection controls sputtering of the structure surface by incident ions to transport, within the structure including the structure surface, structure material to a feature location, in response to the ion flux exposure, to produce a feature substantially by locally adding structure material to the feature location.

Inventors:

Golovchenko, Jene A.; Branton, Daniel; Aziz, Michael J.; Li, Jiali; Stein, Derek M.; McMullan, Ciaran J.

Issue Date:

2004-08-31

Research Org.:

Harvard Univ., Cambridge, MA (United States)

Sponsoring Org.:

USDOE

OSTI Identifier:

1531479

Patent Number(s):

6783643

Application Number:

10/186,105

Assignee:

President and Fellows of Harvard College (Cambridge, MA)

Patent Classifications (CPCs):

B - PERFORMING OPERATIONS B81 - MICROSTRUCTURAL TECHNOLOGY B81C - PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS

G - PHYSICS G01 - MEASURING G01N - INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES

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B - PERFORMING OPERATIONS B81 - MICROSTRUCTURAL TECHNOLOGY B81C - PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS

B81C1/00626 - {Processes for achieving a desired geometry not provided for in groups B81C1/00563 - B81C1/00619}
B81C2201/0143 - Focussed beam, i.e. laser, ion or e-beam

G - PHYSICS G01 - MEASURING G01N - INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES

G01N33/48721 - {Investigating individual macromolecules, e.g. by translocation through nanopores

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

H01L22/26 - {Acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection, in-situ thickness measurement
H01L2924/00 - Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
H01L2924/0002 - Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

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DOE Contract Number:  

FG02-01ER45922; FG02-89ER45401

Resource Type:

Patent

Resource Relation:

Patent File Date: 2002-06-27

Country of Publication:

United States

Language:

English