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Title: Process for coating silicon shot with dopant for addition of dopant in crystal growth

Abstract

An inexpensive method of coating silicon shot with boron atoms comprises (1) immersing silicon shot in a boron dopant spin-on solution comprising a borosilicate, a polymer precursor, and a volatile solvent, and (2) removing the solvent so as to leave a polymeric coating containing borosilicate on the shot. A precise amount of this coated shot may then be mixed with a measured quantity of silicon pellets and the resulting mixture may then be melted to provide a boron-doped silicon melt for use in growing p-type silicon bodies that can be converted to substrates for photovoltaic solar cells.

Inventors:
Issue Date:
Research Org.:
RWE Schott Solar Inc., Billerica, MA (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1531476
Patent Number(s):
6,740,158
Application Number:
10/142,312
Assignee:
RWE Schott Solar, Inc. (Billerica, MA)
DOE Contract Number:  
ZAX-8-17647-10
Resource Type:
Patent
Resource Relation:
Patent File Date: 2002-05-09
Country of Publication:
United States
Language:
English

Citation Formats

Piwczyk, Bernhard P. Process for coating silicon shot with dopant for addition of dopant in crystal growth. United States: N. p., 2004. Web.
Piwczyk, Bernhard P. Process for coating silicon shot with dopant for addition of dopant in crystal growth. United States.
Piwczyk, Bernhard P. Tue . "Process for coating silicon shot with dopant for addition of dopant in crystal growth". United States. https://www.osti.gov/servlets/purl/1531476.
@article{osti_1531476,
title = {Process for coating silicon shot with dopant for addition of dopant in crystal growth},
author = {Piwczyk, Bernhard P.},
abstractNote = {An inexpensive method of coating silicon shot with boron atoms comprises (1) immersing silicon shot in a boron dopant spin-on solution comprising a borosilicate, a polymer precursor, and a volatile solvent, and (2) removing the solvent so as to leave a polymeric coating containing borosilicate on the shot. A precise amount of this coated shot may then be mixed with a measured quantity of silicon pellets and the resulting mixture may then be melted to provide a boron-doped silicon melt for use in growing p-type silicon bodies that can be converted to substrates for photovoltaic solar cells.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2004},
month = {5}
}

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Works referenced in this record:

Silicon single crystal wafer, epitaxial silicon wafer, and methods for producing them
patent, November 2002


Boron source for silicon molecular beam epitaxy
patent, August 1992


Process for device fabrication using a high-energy boron implant
patent, October 2000


Semiconductor substrate and method of manufacturing same
patent, December 1999


Boron doping a semiconductor particle
patent, June 1998


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