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Title: Semiconductor radiation spectrometer

Abstract

An improved semiconductor radiation detector which involves engineering the internal electrical field through an external infrared light source. A planar semiconductor radiation detector is applied with a bias voltage, and an optical light beam with a selected photon energy is used to illuminate the detector and engineer the internal electric field. Different light beam intensities or photon energies produce different distributions of the internal electric field. The width of the electric field can be fine-tuned by changing the optical beam intensity and wavelength, so that the radiation detector performance can be optimized. The detector is portable, small in size, and operates at room temperature.

Inventors:
;
Issue Date:
Research Org.:
Sandia National Lab. (SNL-CA), Livermore, CA (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1531441
Patent Number(s):
6,373,064
Application Number:
09/233,364
Assignee:
Sandia Corporation (Livermore, CA)
DOE Contract Number:  
AC04-94AL85000
Resource Type:
Patent
Resource Relation:
Patent File Date: 1999-01-19
Country of Publication:
United States
Language:
English

Citation Formats

Yao, H. Walter, and James, Ralph B. Semiconductor radiation spectrometer. United States: N. p., 2002. Web.
Yao, H. Walter, & James, Ralph B. Semiconductor radiation spectrometer. United States.
Yao, H. Walter, and James, Ralph B. Tue . "Semiconductor radiation spectrometer". United States. https://www.osti.gov/servlets/purl/1531441.
@article{osti_1531441,
title = {Semiconductor radiation spectrometer},
author = {Yao, H. Walter and James, Ralph B.},
abstractNote = {An improved semiconductor radiation detector which involves engineering the internal electrical field through an external infrared light source. A planar semiconductor radiation detector is applied with a bias voltage, and an optical light beam with a selected photon energy is used to illuminate the detector and engineer the internal electric field. Different light beam intensities or photon energies produce different distributions of the internal electric field. The width of the electric field can be fine-tuned by changing the optical beam intensity and wavelength, so that the radiation detector performance can be optimized. The detector is portable, small in size, and operates at room temperature.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2002},
month = {4}
}

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