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Title: Selective nanoscale growth of lattice mismatched materials

Abstract

Exemplary embodiments provide materials and methods of forming high-quality semiconductor devices using lattice-mismatched materials. In one embodiment, a composite film including one or more substantially-single-particle-thick nanoparticle layers can be deposited over a substrate as a nanoscale selective growth mask for epitaxially growing lattice-mismatched materials over the substrate.

Inventors:
;
Issue Date:
Research Org.:
STC.UNM, Albuquerque, NM (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1531367
Patent Number(s):
10109480
Application Number:
15/599,376
Assignee:
STC.UNM (Albuquerque, NM)
Patent Classifications (CPCs):
C - CHEMISTRY C30 - CRYSTAL GROWTH C30B - SINGLE-CRYSTAL-GROWTH
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
DOE Contract Number:  
909872
Resource Type:
Patent
Resource Relation:
Patent File Date: 2017-05-18
Country of Publication:
United States
Language:
English

Citation Formats

Lee, Seung -Chang, and Brueck, Steven R. J. Selective nanoscale growth of lattice mismatched materials. United States: N. p., 2018. Web.
Lee, Seung -Chang, & Brueck, Steven R. J. Selective nanoscale growth of lattice mismatched materials. United States.
Lee, Seung -Chang, and Brueck, Steven R. J. Tue . "Selective nanoscale growth of lattice mismatched materials". United States. https://www.osti.gov/servlets/purl/1531367.
@article{osti_1531367,
title = {Selective nanoscale growth of lattice mismatched materials},
author = {Lee, Seung -Chang and Brueck, Steven R. J.},
abstractNote = {Exemplary embodiments provide materials and methods of forming high-quality semiconductor devices using lattice-mismatched materials. In one embodiment, a composite film including one or more substantially-single-particle-thick nanoparticle layers can be deposited over a substrate as a nanoscale selective growth mask for epitaxially growing lattice-mismatched materials over the substrate.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2018},
month = {10}
}

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Works referenced in this record:

Effect Of Mg, Zn, Si, And O On The Lattice Constant of Gallium Nitride Thin Films
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Method for epitaxial growth
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New approach to the high quality epitaxial growth of lattice‐mismatched materials
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Strain-relieved, dislocation-free InxGa1−xAs∕GaAs(001) heterostructure by nanoscale-patterned growth
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Lithography-free Nanoscale Patterned Growth of GaAs on Si(001) with Sub-100-nm Silica Nanoparticles by Molecular Beam Epitaxy
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Nitride-based semiconductor element and method of forming nitride-based semiconductor
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