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Title: Hybrid CMOS-MEMS devices adapted for high-temperature operation and method for their manufacture

Abstract

A silicon carbide based MOS integrated circuit is monolithically integrated with a suspended piezoelectric aluminum nitride member to form a high-temperature-capable hybrid MEMS-over-MOS structure. In the integrated structure, a post-MOS passivation layer of silicon carbide is deposited over the MOS passivation and overlain by a structural layer of the MEMS device. Electrical contact to refractory metal conductors of the MOS integrated circuit is provided by tungsten vias that are formed so as to pass vertically through the structural layer and the post-MOS passivation layer.

Inventors:
; ;
Issue Date:
Research Org.:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org.:
USDOE National Nuclear Security Administration (NNSA)
OSTI Identifier:
1525005
Patent Number(s):
10214415
Application Number:
15/910,531
Assignee:
National Technology & Engineering Solutions of Sandia, LLC (Albuquerque, NM)
Patent Classifications (CPCs):
B - PERFORMING OPERATIONS B81 - MICROSTRUCTURAL TECHNOLOGY B81C - PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
B - PERFORMING OPERATIONS B81 - MICROSTRUCTURAL TECHNOLOGY B81B - MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
DOE Contract Number:  
NA0003525
Resource Type:
Patent
Resource Relation:
Patent File Date: 2018-03-02
Country of Publication:
United States
Language:
English
Subject:
42 ENGINEERING

Citation Formats

Griffin, Benjamin, Habermehl, Scott D., and Clews, Peggy J. Hybrid CMOS-MEMS devices adapted for high-temperature operation and method for their manufacture. United States: N. p., 2019. Web.
Griffin, Benjamin, Habermehl, Scott D., & Clews, Peggy J. Hybrid CMOS-MEMS devices adapted for high-temperature operation and method for their manufacture. United States.
Griffin, Benjamin, Habermehl, Scott D., and Clews, Peggy J. Tue . "Hybrid CMOS-MEMS devices adapted for high-temperature operation and method for their manufacture". United States. https://www.osti.gov/servlets/purl/1525005.
@article{osti_1525005,
title = {Hybrid CMOS-MEMS devices adapted for high-temperature operation and method for their manufacture},
author = {Griffin, Benjamin and Habermehl, Scott D. and Clews, Peggy J.},
abstractNote = {A silicon carbide based MOS integrated circuit is monolithically integrated with a suspended piezoelectric aluminum nitride member to form a high-temperature-capable hybrid MEMS-over-MOS structure. In the integrated structure, a post-MOS passivation layer of silicon carbide is deposited over the MOS passivation and overlain by a structural layer of the MEMS device. Electrical contact to refractory metal conductors of the MOS integrated circuit is provided by tungsten vias that are formed so as to pass vertically through the structural layer and the post-MOS passivation layer.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2019},
month = {2}
}

Works referenced in this record:

Methods for dry etching semiconductor devices
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Processing and Characterization of Thousand-Hour 500 °C Durable 4H-SiC JFET Integrated Circuits
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SiC-AlN-composition-based MEMS
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Formation of stress-controlled, highly textured, α-SiC thin films at 950 °C
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Method for fabricating a microelectromechanical resonator
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Development of an aluminum nitride-silicon carbide material set for high-temperature sensor applications
conference, June 2014


Prolonged 500 °C Demonstration of 4H-SiC JFET ICs With Two-Level Interconnect
journal, May 2016


Demonstration of 4H-SiC Digital Integrated Circuits Above 800 °C
journal, August 2017