Method for simultaneous modification of multiple semiconductor device features
Abstract
Various technologies for simultaneously making a plurality of modifications to a previously manufactured semiconductor are described herein. A mask layer is applied to a surface of the previously manufactured semiconductor device. A pattern is formed in the mask layer, where the pattern is aligned with a plurality of features of the semiconductor device that are desirably modified. Layers of the semiconductor device are etched based on the pattern to create a plurality of vias that each extend through one or more layers of the semiconductor device to a respective feature of the device. A conducting material is deposited into the vias to form a plurality of conducting plugs. Conducting material may be further deposited on the surface of the semiconductor device to connect plugs to one another and/or connect plugs to surface features of the device, thereby forming a plurality of new connections between features of the semiconductor device.
- Inventors:
- Issue Date:
- Research Org.:
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1524991
- Patent Number(s):
- 10217704
- Application Number:
- 15/794,403
- Assignee:
- National Technology & Engineering Solutions of Sandia, LLC (Albuquerque, NM)
- Patent Classifications (CPCs):
-
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
G - PHYSICS G06 - COMPUTING G06F - ELECTRIC DIGITAL DATA PROCESSING
- DOE Contract Number:
- NA0003525
- Resource Type:
- Patent
- Resource Relation:
- Patent File Date: 2017-10-26
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY
Citation Formats
Shul, Randy J., Sniegowski, Jeffry J., Larson, Kurt W., and Zortman, William A. Method for simultaneous modification of multiple semiconductor device features. United States: N. p., 2019.
Web.
Shul, Randy J., Sniegowski, Jeffry J., Larson, Kurt W., & Zortman, William A. Method for simultaneous modification of multiple semiconductor device features. United States.
Shul, Randy J., Sniegowski, Jeffry J., Larson, Kurt W., and Zortman, William A. Tue .
"Method for simultaneous modification of multiple semiconductor device features". United States. https://www.osti.gov/servlets/purl/1524991.
@article{osti_1524991,
title = {Method for simultaneous modification of multiple semiconductor device features},
author = {Shul, Randy J. and Sniegowski, Jeffry J. and Larson, Kurt W. and Zortman, William A.},
abstractNote = {Various technologies for simultaneously making a plurality of modifications to a previously manufactured semiconductor are described herein. A mask layer is applied to a surface of the previously manufactured semiconductor device. A pattern is formed in the mask layer, where the pattern is aligned with a plurality of features of the semiconductor device that are desirably modified. Layers of the semiconductor device are etched based on the pattern to create a plurality of vias that each extend through one or more layers of the semiconductor device to a respective feature of the device. A conducting material is deposited into the vias to form a plurality of conducting plugs. Conducting material may be further deposited on the surface of the semiconductor device to connect plugs to one another and/or connect plugs to surface features of the device, thereby forming a plurality of new connections between features of the semiconductor device.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2019},
month = {2}
}
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