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Title: Stretchable form of single crystal silicon for high performance electronics on rubber substrates

Abstract

The present invention provides stretchable, and optionally printable, semiconductors and electronic circuits capable of providing good performance when stretched, compressed, flexed or otherwise deformed. Stretchable semiconductors and electronic circuits of the present invention preferred for some applications are flexible, in addition to being stretchable, and thus are capable of significant elongation, flexing, bending or other deformation along one or more axes. Further, stretchable semiconductors and electronic circuits of the present invention may be adapted to a wide range of device configurations to provide fully flexible electronic and optoelectronic devices.

Inventors:
; ; ;
Issue Date:
Research Org.:
Univ. of Illinois at Urbana-Champaign, IL (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1502818
Patent Number(s):
10204864
Application Number:
15/339,338
Assignee:
The Board of Trustees of the University of Illinois (Urbana, IL)
Patent Classifications (CPCs):
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
H - ELECTRICITY H05 - ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR H05K - PRINTED CIRCUITS
DOE Contract Number:  
FG02-91ER45439
Resource Type:
Patent
Resource Relation:
Patent File Date: 2016 Oct 31
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Rogers, John A., Khang, Dahl-Young, Sun, Yugang, and Menard, Etienne. Stretchable form of single crystal silicon for high performance electronics on rubber substrates. United States: N. p., 2019. Web.
Rogers, John A., Khang, Dahl-Young, Sun, Yugang, & Menard, Etienne. Stretchable form of single crystal silicon for high performance electronics on rubber substrates. United States.
Rogers, John A., Khang, Dahl-Young, Sun, Yugang, and Menard, Etienne. Tue . "Stretchable form of single crystal silicon for high performance electronics on rubber substrates". United States. https://www.osti.gov/servlets/purl/1502818.
@article{osti_1502818,
title = {Stretchable form of single crystal silicon for high performance electronics on rubber substrates},
author = {Rogers, John A. and Khang, Dahl-Young and Sun, Yugang and Menard, Etienne},
abstractNote = {The present invention provides stretchable, and optionally printable, semiconductors and electronic circuits capable of providing good performance when stretched, compressed, flexed or otherwise deformed. Stretchable semiconductors and electronic circuits of the present invention preferred for some applications are flexible, in addition to being stretchable, and thus are capable of significant elongation, flexing, bending or other deformation along one or more axes. Further, stretchable semiconductors and electronic circuits of the present invention may be adapted to a wide range of device configurations to provide fully flexible electronic and optoelectronic devices.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2019},
month = {2}
}

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Characterization of a Time Multiplexed Inductively Coupled Plasma Etcher
journal, January 1999


Piezoelectric/ultrananocrystalline diamond heterostructures for high-performance multifunctional micro/nanoelectromechanical systems
journal, March 2007


Self-Catalysis and Phase Transformation in the Formation of CdSe Nanosaws
journal, October 2004


Thermal oxide of polycrystalline silicon on steel foil as a thin-film transistor gate dielectric
journal, June 2001


Multiwalled carbon nanotube AFM probes for surface characterization of micro/nanostructures
journal, November 2004


Conformable, flexible, large-area networks of pressure and thermal sensors with organic transistor active matrixes
journal, August 2005


From Si Source Gas Directly to Positioned, Electrically Contacted Si Nanowires: The Self-Assembling “Grow-in-Place” Approach
journal, November 2004


Colloidal Two-Dimensional Systems: CdSe Quantum Shells and Wells
journal, October 2003


Organic electronics on paper
journal, April 2004


Magnetic self-assembly of three-dimensional surfaces from planar sheets
journal, March 2005


Finite deformation mechanics in buckled thin films on compliant supports
journal, September 2007


Stability of low-temperature amorphous silicon thin film transistors formed on glass and transparent plastic substrates
journal, April 2000

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  • Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 18, Issue 2, p. 683-689
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The Chemistry and Physics of Semiconductor Nanowires
journal, February 2005


Spin on dopants for high-performance single-crystal silicon transistors on flexible plastic substrates
journal, March 2005


Microporous materials: Electrochemically grown photonic crystals
journal, December 1999


Gallium Oxide Nanoribbons and Nanosheets
journal, February 2002


Design of High-Performance Regioregular Polythiophenes for Organic Thin-Film Transistors
journal, August 2005


Chemical Etching Characteristics of (001)GaAs
journal, January 1983


Ordering of microwrinkle patterns by compressive strain
journal, April 2004


Additive, nanoscale patterning of metal films with a stamp and a surface chemistry mediated transfer process: Applications in plastic electronics
journal, July 2002


Chemistry and Physics in One Dimension: Synthesis and Properties of Nanowires and Nanotubes
journal, February 1999


Low-Temperature Materials and Thin Film Transistors for Flexible Electronics
journal, August 2005


Creating micro- and nanostructures on tubular and spherical surfaces
journal, December 2007

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Mixed Mode Cracking in Layered Materials
book, January 1991


Growth and properties of nanocrystalline diamond films
journal, October 2006


High-performance organic thin-film transistors with metal oxide/metal bilayer electrode
journal, November 2005


High-performance electronics using dense, perfectly aligned arrays of single-walled carbon nanotubes
journal, March 2007