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Title: High throughput semiconductor deposition system

Abstract

A reactor for growing or depositing semiconductor films or devices. The reactor may be designed for inline production of III-V materials grown by hydride vapor phase epitaxy (HVPE). The operating principles of the HVPE reactor can be used to provide a completely or partially inline reactor for many different materials. An exemplary design of the reactor is shown in the attached drawings. In some instances, all or many of the pieces of the reactor formed of quartz, such as welded quartz tubing, while other reactors are made from metal with appropriate corrosion resistant coatings such as quartz or other materials, e.g., corrosion resistant material, or stainless steel tubing or pipes may be used with a corrosion resistant material useful with HVPE-type reactants and gases. Using HVPE in the reactor allows use of lower-cost precursors at higher deposition rates such as in the range of 1 to 5 .mu.m/minute.

Inventors:
; ; ; ;
Issue Date:
Research Org.:
National Renewable Energy Lab. (NREL), Golden, CO (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1499123
Patent Number(s):
10192740
Application Number:
15/707,642
Assignee:
Alliance for Sustainable Energy, LLC (Golden, CO)
Patent Classifications (CPCs):
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
C - CHEMISTRY C30 - CRYSTAL GROWTH C30B - SINGLE-CRYSTAL-GROWTH
DOE Contract Number:  
AC36-08GO28308
Resource Type:
Patent
Resource Relation:
Patent File Date: 2017 Sep 18
Country of Publication:
United States
Language:
English

Citation Formats

Young, David L., Ptak, Aaron Joseph, Kuech, Thomas F., Schulte, Kevin, and Simon, John D.. High throughput semiconductor deposition system. United States: N. p., 2019. Web.
Young, David L., Ptak, Aaron Joseph, Kuech, Thomas F., Schulte, Kevin, & Simon, John D.. High throughput semiconductor deposition system. United States.
Young, David L., Ptak, Aaron Joseph, Kuech, Thomas F., Schulte, Kevin, and Simon, John D.. Tue . "High throughput semiconductor deposition system". United States. https://www.osti.gov/servlets/purl/1499123.
@article{osti_1499123,
title = {High throughput semiconductor deposition system},
author = {Young, David L. and Ptak, Aaron Joseph and Kuech, Thomas F. and Schulte, Kevin and Simon, John D.},
abstractNote = {A reactor for growing or depositing semiconductor films or devices. The reactor may be designed for inline production of III-V materials grown by hydride vapor phase epitaxy (HVPE). The operating principles of the HVPE reactor can be used to provide a completely or partially inline reactor for many different materials. An exemplary design of the reactor is shown in the attached drawings. In some instances, all or many of the pieces of the reactor formed of quartz, such as welded quartz tubing, while other reactors are made from metal with appropriate corrosion resistant coatings such as quartz or other materials, e.g., corrosion resistant material, or stainless steel tubing or pipes may be used with a corrosion resistant material useful with HVPE-type reactants and gases. Using HVPE in the reactor allows use of lower-cost precursors at higher deposition rates such as in the range of 1 to 5 .mu.m/minute.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2019},
month = {1}
}

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Works referenced in this record:

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journal, June 1997


Crystal growth and properties of binary, ternary and quaternary (In,Ga)(As,P) alloys grown by the hydride vapor phase epitaxy technique
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40.8% efficient inverted triple-junction solar cell with two independently metamorphic junctions
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conference, June 2006


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Low nonalloyed Ohmic contact resistance to nitride high electron mobility transistors using N-face growth
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Hydride VPE growth technique for InP/GaInAsP system
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