Systems and methods for forming diamond heterojunction junction devices

Sumant, Anirudha V.; Kovi, Kiran Kumar

Title: Systems and methods for forming diamond heterojunction junction devices

Abstract

A method of forming a p-n junction device comprises providing a base layer including a p-type diamond. A monolayer or few layer of a transition metal dichalcogenide (TMDC) is disposed on at least a portion of the base layer so as to form a heterojunction therebetween. The TMDC monolayer is an n-type layer such that the heterojunction between the intrinsic and p-type diamond base layer and the n-type TMDC monolayer is a p-n junction.

Inventors:: Sumant, Anirudha V.; Kovi, Kiran Kumar

Issue Date:: 2019-01-22

Research Org.:: Argonne National Laboratory (ANL), Argonne, IL (United States)

Sponsoring Org.:: USDOE

OSTI Identifier:: 1498719

Patent Number(s):: 10186584

Application Number:: 15/240,594

Assignee:: UChicago Argonne, LLC (Chicago, IL)

Patent Classifications (CPCs):: H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

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H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
H01L21/02112 - {characterised by the material of the layer}
H01L21/02164 - {the material being a silicon oxide, e.g. SiO2}
H01L21/0217 - {the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
H01L21/02178 - {the material containing aluminium, e.g. Al2O3}
H01L21/041 - {Making n- or p-doped regions}
H01L21/043 - {Ohmic electrodes}
H01L21/441 - Deposition of conductive or insulating materials for electrodes
H01L29/04 - characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
H01L29/267 - in different semiconductor regions {, e.g. heterojunctions
H01L29/45 - Ohmic electrodes
H01L29/6603 - {Diodes}
H01L29/861 - Diodes

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DOE Contract Number:: AC02-06CH11357

Resource Type:: Patent

Resource Relation:: Patent File Date: 2016 Aug 18

Country of Publication:: United States

Language:: English

Citation Formats


                    Sumant, Anirudha V., and Kovi, Kiran Kumar. Systems and methods for forming diamond heterojunction junction devices.  United States: N. p., 2019. 
        Web.

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                    Sumant, Anirudha V., & Kovi, Kiran Kumar. Systems and methods for forming diamond heterojunction junction devices.  United States.

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                    Sumant, Anirudha V., and Kovi, Kiran Kumar. Tue .  
        "Systems and methods for forming diamond heterojunction junction devices".  United States.  https://www.osti.gov/servlets/purl/1498719.

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@article{osti_1498719,

  title        = {Systems and methods for forming diamond heterojunction junction devices},

  author       = {Sumant, Anirudha V. and Kovi, Kiran Kumar},

  abstractNote = {A method of forming a p-n junction device comprises providing a base layer including a p-type diamond. A monolayer or few layer of a transition metal dichalcogenide (TMDC) is disposed on at least a portion of the base layer so as to form a heterojunction therebetween. The TMDC monolayer is an n-type layer such that the heterojunction between the intrinsic and p-type diamond base layer and the n-type TMDC monolayer is a p-n junction.},

  doi          = {},

  journal      = {},
number       = ,

  volume       = ,

  place        = {United States},

  year         = {2019},

  month        = {1}

}

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Works referenced in this record:

Method for lubricating diamond-like carbon coated surfaces
patent-application, June 2005

Castle, Rebecca
US Patent Application 10/810044; 20050119136
URL: https://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/20050119136

Exfoliation of Thermoelectric Materials and Transition Metal Dichalcogenides Using Ionic Liquids
patent-application, January 2015

Wang, Hung-Ta; Frazier, Rachel; Guo, Lingling
US Patent Application 14/317614; 20150004733
URL: https://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/20150004733

Method for heteroepitaxial growth of a two-dimensional material on a three-dimensional material
patent, August 1991

Koma, Atsushi; Saiki, Koichiro
US Patent Document 5,039,626
URL: https://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/5039626

Growth and electrical characterization of two-dimensional layered MoS ₂ /SiC heterojunctions
journal, November 2014

Lee, Edwin W.; Ma, Lu; Nath, Digbijoy N.
Applied Physics Letters, Vol. 105, Issue 20
https://doi.org/10.1063/1.4901048

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Title: Systems and methods for forming diamond heterojunction junction devices

Abstract

Citation Formats

Method for lubricating diamond-like carbon coated surfaces patent-application, June 2005

Exfoliation of Thermoelectric Materials and Transition Metal Dichalcogenides Using Ionic Liquids patent-application, January 2015

Method for heteroepitaxial growth of a two-dimensional material on a three-dimensional material patent, August 1991

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Method for lubricating diamond-like carbon coated surfaces
patent-application, June 2005

Exfoliation of Thermoelectric Materials and Transition Metal Dichalcogenides Using Ionic Liquids
patent-application, January 2015

Method for heteroepitaxial growth of a two-dimensional material on a three-dimensional material
patent, August 1991

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journal, November 2014