Title: Systems and methods for forming diamond heterojunction junction devices

Abstract

A method of forming a p-n junction device comprises providing a base layer including a p-type diamond. A monolayer or few layer of a transition metal dichalcogenide (TMDC) is disposed on at least a portion of the base layer so as to form a heterojunction therebetween. The TMDC monolayer is an n-type layer such that the heterojunction between the intrinsic and p-type diamond base layer and the n-type TMDC monolayer is a p-n junction.

Inventors:

Sumant, Anirudha V.; Kovi, Kiran Kumar

Issue Date:

2019-01-22

Research Org.:

Argonne National Laboratory (ANL), Argonne, IL (United States)

Sponsoring Org.:

USDOE

OSTI Identifier:

1498719

Patent Number(s):

10186584

Application Number:

15/240,594

Assignee:

UChicago Argonne, LLC (Chicago, IL)

Patent Classifications (CPCs):

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

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H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

H01L21/02112 - {characterised by the material of the layer}
H01L21/02164 - {the material being a silicon oxide, e.g. SiO2}
H01L21/0217 - {the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
H01L21/02178 - {the material containing aluminium, e.g. Al2O3}
H01L21/041 - {Making n- or p-doped regions}
H01L21/043 - {Ohmic electrodes}
H01L21/441 - Deposition of conductive or insulating materials for electrodes
H01L29/04 - characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
H01L29/267 - in different semiconductor regions {, e.g. heterojunctions
H01L29/45 - Ohmic electrodes
H01L29/6603 - {Diodes}
H01L29/861 - Diodes

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DOE Contract Number:  

AC02-06CH11357

Resource Type:

Patent

Resource Relation:

Patent File Date: 2016 Aug 18

Country of Publication:

United States

Language:

English