Systems and methods for forming diamond heterojunction junction devices
Abstract
A method of forming a p-n junction device comprises providing a base layer including a p-type diamond. A monolayer or few layer of a transition metal dichalcogenide (TMDC) is disposed on at least a portion of the base layer so as to form a heterojunction therebetween. The TMDC monolayer is an n-type layer such that the heterojunction between the intrinsic and p-type diamond base layer and the n-type TMDC monolayer is a p-n junction.
- Inventors:
- Issue Date:
- Research Org.:
- Argonne National Laboratory (ANL), Argonne, IL (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1498719
- Patent Number(s):
- 10186584
- Application Number:
- 15/240,594
- Assignee:
- UChicago Argonne, LLC (Chicago, IL)
- Patent Classifications (CPCs):
-
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
- DOE Contract Number:
- AC02-06CH11357
- Resource Type:
- Patent
- Resource Relation:
- Patent File Date: 2016 Aug 18
- Country of Publication:
- United States
- Language:
- English
Citation Formats
Sumant, Anirudha V., and Kovi, Kiran Kumar. Systems and methods for forming diamond heterojunction junction devices. United States: N. p., 2019.
Web.
Sumant, Anirudha V., & Kovi, Kiran Kumar. Systems and methods for forming diamond heterojunction junction devices. United States.
Sumant, Anirudha V., and Kovi, Kiran Kumar. Tue .
"Systems and methods for forming diamond heterojunction junction devices". United States. https://www.osti.gov/servlets/purl/1498719.
@article{osti_1498719,
title = {Systems and methods for forming diamond heterojunction junction devices},
author = {Sumant, Anirudha V. and Kovi, Kiran Kumar},
abstractNote = {A method of forming a p-n junction device comprises providing a base layer including a p-type diamond. A monolayer or few layer of a transition metal dichalcogenide (TMDC) is disposed on at least a portion of the base layer so as to form a heterojunction therebetween. The TMDC monolayer is an n-type layer such that the heterojunction between the intrinsic and p-type diamond base layer and the n-type TMDC monolayer is a p-n junction.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2019},
month = {1}
}
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