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Title: Systems and methods for forming diamond heterojunction junction devices

Abstract

A method of forming a p-n junction device comprises providing a base layer including a p-type diamond. A monolayer or few layer of a transition metal dichalcogenide (TMDC) is disposed on at least a portion of the base layer so as to form a heterojunction therebetween. The TMDC monolayer is an n-type layer such that the heterojunction between the intrinsic and p-type diamond base layer and the n-type TMDC monolayer is a p-n junction.

Inventors:
;
Issue Date:
Research Org.:
Argonne National Lab. (ANL), Argonne, IL (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1498719
Patent Number(s):
10186584
Application Number:
15/240,594
Assignee:
UChicago Argonne, LLC (Chicago, IL)
Patent Classifications (CPCs):
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
DOE Contract Number:  
AC02-06CH11357
Resource Type:
Patent
Resource Relation:
Patent File Date: 2016 Aug 18
Country of Publication:
United States
Language:
English

Citation Formats

Sumant, Anirudha V., and Kovi, Kiran Kumar. Systems and methods for forming diamond heterojunction junction devices. United States: N. p., 2019. Web.
Sumant, Anirudha V., & Kovi, Kiran Kumar. Systems and methods for forming diamond heterojunction junction devices. United States.
Sumant, Anirudha V., and Kovi, Kiran Kumar. Tue . "Systems and methods for forming diamond heterojunction junction devices". United States. https://www.osti.gov/servlets/purl/1498719.
@article{osti_1498719,
title = {Systems and methods for forming diamond heterojunction junction devices},
author = {Sumant, Anirudha V. and Kovi, Kiran Kumar},
abstractNote = {A method of forming a p-n junction device comprises providing a base layer including a p-type diamond. A monolayer or few layer of a transition metal dichalcogenide (TMDC) is disposed on at least a portion of the base layer so as to form a heterojunction therebetween. The TMDC monolayer is an n-type layer such that the heterojunction between the intrinsic and p-type diamond base layer and the n-type TMDC monolayer is a p-n junction.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2019},
month = {1}
}

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