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Title: Polymer-hybrid electro-optic devices and method of fabricating polymer-hybrid electro-optic devices

Abstract

A polymer-hybrid electro-optic device is fabricated by providing a semiconductor substrate, depositing a metal electrode layer on the semiconductor substrate, depositing a dielectric barrier core layer within a gap of the metal electrode layer, patterning a polymer layer to cover the dielectric barrier core layer and partially covering the metal electrode layer, infiltrating the polymer layer with an inorganic component to form a hybrid oxide-polymer layer, and removing excess inorganic component from the semiconductor substrate and metal electrode layer.

Inventors:
; ;
Issue Date:
Research Org.:
Argonne National Lab. (ANL), Argonne, IL (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1497869
Patent Number(s):
10,164,188
Application Number:
15/433,659
Assignee:
UChicago Argonne, LLC (Chicago, IL)
DOE Contract Number:  
AC02-06CH11357
Resource Type:
Patent
Resource Relation:
Patent File Date: 2017 Feb 15
Country of Publication:
United States
Language:
English

Citation Formats

Ocola, Leonidas E., Gosztola, David J., and Yanguas-Gil, Angel. Polymer-hybrid electro-optic devices and method of fabricating polymer-hybrid electro-optic devices. United States: N. p., 2018. Web.
Ocola, Leonidas E., Gosztola, David J., & Yanguas-Gil, Angel. Polymer-hybrid electro-optic devices and method of fabricating polymer-hybrid electro-optic devices. United States.
Ocola, Leonidas E., Gosztola, David J., and Yanguas-Gil, Angel. Tue . "Polymer-hybrid electro-optic devices and method of fabricating polymer-hybrid electro-optic devices". United States. https://www.osti.gov/servlets/purl/1497869.
@article{osti_1497869,
title = {Polymer-hybrid electro-optic devices and method of fabricating polymer-hybrid electro-optic devices},
author = {Ocola, Leonidas E. and Gosztola, David J. and Yanguas-Gil, Angel},
abstractNote = {A polymer-hybrid electro-optic device is fabricated by providing a semiconductor substrate, depositing a metal electrode layer on the semiconductor substrate, depositing a dielectric barrier core layer within a gap of the metal electrode layer, patterning a polymer layer to cover the dielectric barrier core layer and partially covering the metal electrode layer, infiltrating the polymer layer with an inorganic component to form a hybrid oxide-polymer layer, and removing excess inorganic component from the semiconductor substrate and metal electrode layer.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2018},
month = {12}
}

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Works referenced in this record:

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