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Title: System for growth of large aluminum nitride single crystals with thermal-gradient control

Abstract

In various embodiments, non-zero thermal gradients are formed within a growth chamber both substantially parallel and substantially perpendicular to the growth direction during formation of semiconductor crystals, where the ratio of the two thermal gradients (parallel to perpendicular) is less than 10, by, e.g., arrangement of thermal shields outside of the growth chamber.

Inventors:
; ; ;
Issue Date:
Research Org.:
CRYSTAL IS, INC., Green Island, NY (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1496857
Patent Number(s):
10,106,913
Application Number:
15/410,915
Assignee:
CRYSTAL IS, INC. (Green Island, NY) NETL
DOE Contract Number:  
FC26-08NT01578
Resource Type:
Patent
Resource Relation:
Patent File Date: 2017 Jan 20
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Bondokov, Robert T., Rao, Shailaja P., Gibb, Shawn Robert, and Schowalter, Leo J. System for growth of large aluminum nitride single crystals with thermal-gradient control. United States: N. p., 2018. Web.
Bondokov, Robert T., Rao, Shailaja P., Gibb, Shawn Robert, & Schowalter, Leo J. System for growth of large aluminum nitride single crystals with thermal-gradient control. United States.
Bondokov, Robert T., Rao, Shailaja P., Gibb, Shawn Robert, and Schowalter, Leo J. Tue . "System for growth of large aluminum nitride single crystals with thermal-gradient control". United States. https://www.osti.gov/servlets/purl/1496857.
@article{osti_1496857,
title = {System for growth of large aluminum nitride single crystals with thermal-gradient control},
author = {Bondokov, Robert T. and Rao, Shailaja P. and Gibb, Shawn Robert and Schowalter, Leo J.},
abstractNote = {In various embodiments, non-zero thermal gradients are formed within a growth chamber both substantially parallel and substantially perpendicular to the growth direction during formation of semiconductor crystals, where the ratio of the two thermal gradients (parallel to perpendicular) is less than 10, by, e.g., arrangement of thermal shields outside of the growth chamber.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2018},
month = {10}
}

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