Form of silicon and method of making the same

Strobel, Timothy A.; Kim, Duck Young; Kurakevych, Oleksandr O.

Title: Form of silicon and method of making the same

Abstract

The invention relates to a new phase of silicon, Si.sub.24, and a method of making the same. Si.sub.24 has a quasi-direct band gap, with a direct gap value of 1.34 eV and an indirect gap value of 1.3 eV. The invention also relates to a compound of the formula Na.sub.4Si.sub.24 and a method of making the same. Na.sub.4Si.sub.24 may be used as a precursor to make Si.sub.24.

Inventors:: Strobel, Timothy A.; Kim, Duck Young; Kurakevych, Oleksandr O.

Issue Date:: 2019-01-15

Research Org.:: Energy Frontier Research Centers (EFRC) (United States)

Sponsoring Org.:: USDOE

OSTI Identifier:: 1496806

Patent Number(s):: 10179740

Application Number:: 15/639,626

Assignee:: CARNEGIE INSTITUTION OF WASHINGTON (Washington, DC)

Patent Classifications (CPCs):: C - CHEMISTRY C01 - INORGANIC CHEMISTRY C01B - NON-METALLIC ELEMENTS

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C - CHEMISTRY C01 - INORGANIC CHEMISTRY C01B - NON-METALLIC ELEMENTS
C01B33/00 - Silicon
C01B33/06 - Metal silicides
C01B33/021 - Preparation
C01B33/02 - Silicon

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DOE Contract Number:: SC0001057

Resource Type:: Patent

Resource Relation:: Patent File Date: 2017 Jun 30

Country of Publication:: United States

Language:: English

Subject:: 36 MATERIALS SCIENCE

Citation Formats


                    Strobel, Timothy A., Kim, Duck Young, and Kurakevych, Oleksandr O. Form of silicon and method of making the same.  United States: N. p., 2019. 
        Web.

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                    Strobel, Timothy A., Kim, Duck Young, & Kurakevych, Oleksandr O. Form of silicon and method of making the same.  United States.

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                    Strobel, Timothy A., Kim, Duck Young, and Kurakevych, Oleksandr O. Tue .  
        "Form of silicon and method of making the same".  United States.  https://www.osti.gov/servlets/purl/1496806.

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@article{osti_1496806,

  title        = {Form of silicon and method of making the same},

  author       = {Strobel, Timothy A. and Kim, Duck Young and Kurakevych, Oleksandr O.},

  abstractNote = {The invention relates to a new phase of silicon, Si.sub.24, and a method of making the same. Si.sub.24 has a quasi-direct band gap, with a direct gap value of 1.34 eV and an indirect gap value of 1.3 eV. The invention also relates to a compound of the formula Na.sub.4Si.sub.24 and a method of making the same. Na.sub.4Si.sub.24 may be used as a precursor to make Si.sub.24.},

  doi          = {},

  journal      = {},
number       = ,

  volume       = ,

  place        = {United States},

  year         = {2019},

  month        = {1}

}

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Works referenced in this record:

On the clathrate form of elemental silicon, Si136: preparation and characterisation of NaxSi136 (x→0)
journal, May 2004

Ammar, Abdelaziz; Cros, Christian; Pouchard, Michel
Solid State Sciences, Vol. 6, Issue 5
https://doi.org/10.1016/j.solidstatesciences.2004.02.006

Na-Si Clathrates Are High-Pressure Phases: A Melt-Based Route to Control Stoichiometry and Properties
journal, December 2012

Kurakevych, Oleksandr O.; Strobel, Timothy A.; Kim, Duck Young
Crystal Growth & Design, Vol. 13, Issue 1, p. 303-307
https://doi.org/10.1021/cg3017084

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Similar Records

Title: Form of silicon and method of making the same

Abstract

Citation Formats

On the clathrate form of elemental silicon, Si136: preparation and characterisation of NaxSi136 (x→0) journal, May 2004

Na-Si Clathrates Are High-Pressure Phases: A Melt-Based Route to Control Stoichiometry and Properties journal, December 2012

On the clathrate form of elemental silicon, Si136: preparation and characterisation of NaxSi136 (x→0)
journal, May 2004

Na-Si Clathrates Are High-Pressure Phases: A Melt-Based Route to Control Stoichiometry and Properties
journal, December 2012