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Title: Form of silicon and method of making the same

Abstract

The invention relates to a new phase of silicon, Si.sub.24, and a method of making the same. Si.sub.24 has a quasi-direct band gap, with a direct gap value of 1.34 eV and an indirect gap value of 1.3 eV. The invention also relates to a compound of the formula Na.sub.4Si.sub.24 and a method of making the same. Na.sub.4Si.sub.24 may be used as a precursor to make Si.sub.24.

Inventors:
; ;
Issue Date:
Research Org.:
Energy Frontier Research Centers
Sponsoring Org.:
USDOE
OSTI Identifier:
1496806
Patent Number(s):
10,179,740
Application Number:
15/639,626
Assignee:
CARNEGIE INSTITUTION OF WASHINGTON (Washington, DC) EFRC
DOE Contract Number:  
SC0001057
Resource Type:
Patent
Resource Relation:
Patent File Date: 2017 Jun 30
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Strobel, Timothy A., Kim, Duck Young, and Kurakevych, Oleksandr O. Form of silicon and method of making the same. United States: N. p., 2019. Web.
Strobel, Timothy A., Kim, Duck Young, & Kurakevych, Oleksandr O. Form of silicon and method of making the same. United States.
Strobel, Timothy A., Kim, Duck Young, and Kurakevych, Oleksandr O. Tue . "Form of silicon and method of making the same". United States. https://www.osti.gov/servlets/purl/1496806.
@article{osti_1496806,
title = {Form of silicon and method of making the same},
author = {Strobel, Timothy A. and Kim, Duck Young and Kurakevych, Oleksandr O.},
abstractNote = {The invention relates to a new phase of silicon, Si.sub.24, and a method of making the same. Si.sub.24 has a quasi-direct band gap, with a direct gap value of 1.34 eV and an indirect gap value of 1.3 eV. The invention also relates to a compound of the formula Na.sub.4Si.sub.24 and a method of making the same. Na.sub.4Si.sub.24 may be used as a precursor to make Si.sub.24.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2019},
month = {1}
}

Patent:

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