Apparatus for processing materials at high temperatures and pressures
Abstract
An apparatus for processing materials at high temperatures comprises a high strength enclosure; a plurality of high strength radial segments disposed adjacent to and radially inward from the high strength enclosure; a liner disposed adjacent to and radially inward from the radical segments; a chamber defined interior to the liner; a heating device disposed within the chamber; and a capsule disposed within the chamber, the capsule configured to hold a supercritical fluid. The apparatus may be used for growing crystals, e.g., GaN, under high temperature and pressure conditions.
- Inventors:
- Issue Date:
- Research Org.:
- SLT Technologies, Inc., Los Angeles, CA (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1496623
- Patent Number(s):
- 10145021
- Application Number:
- 13/812,757
- Assignee:
- SLT Technologies, Inc. (Los Angeles, CA)
- Patent Classifications (CPCs):
-
C - CHEMISTRY C30 - CRYSTAL GROWTH C30B - SINGLE-CRYSTAL-GROWTH
Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC Y10T - TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- DOE Contract Number:
- AR000020
- Resource Type:
- Patent
- Resource Relation:
- Patent File Date: 2011 Jul 28
- Country of Publication:
- United States
- Language:
- English
Citation Formats
Afimiwala, Kirsh, and Zeng, Larry. Apparatus for processing materials at high temperatures and pressures. United States: N. p., 2018.
Web.
Afimiwala, Kirsh, & Zeng, Larry. Apparatus for processing materials at high temperatures and pressures. United States.
Afimiwala, Kirsh, and Zeng, Larry. Tue .
"Apparatus for processing materials at high temperatures and pressures". United States. https://www.osti.gov/servlets/purl/1496623.
@article{osti_1496623,
title = {Apparatus for processing materials at high temperatures and pressures},
author = {Afimiwala, Kirsh and Zeng, Larry},
abstractNote = {An apparatus for processing materials at high temperatures comprises a high strength enclosure; a plurality of high strength radial segments disposed adjacent to and radially inward from the high strength enclosure; a liner disposed adjacent to and radially inward from the radical segments; a chamber defined interior to the liner; a heating device disposed within the chamber; and a capsule disposed within the chamber, the capsule configured to hold a supercritical fluid. The apparatus may be used for growing crystals, e.g., GaN, under high temperature and pressure conditions.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2018},
month = {12}
}
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Works referenced in this record:
Apparatus for manufacturing semiconductor single crystal
patent, August 1986
- Terashima, Kazutaka; Fukuda, Tsuguo
- US Patent Document 4,606,037
Method of making a crystalline multilayer structure at two pressures the second one lower than first
patent, June 1997
- Porowski, Sylwester; Jun, Jan; Grzegory, Izabella
- US Patent Document 5,637,531
Apparatus for processing materials in supercritical fluids and methods thereof
patent, April 2010
- D'Evelyn, Mark P.; Giddings, Robert Arthur; Sharifi, Fred
- US Patent Document 7,704,324