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Title: Apparatus for processing materials at high temperatures and pressures

Abstract

An apparatus for processing materials at high temperatures comprises a high strength enclosure; a plurality of high strength radial segments disposed adjacent to and radially inward from the high strength enclosure; a liner disposed adjacent to and radially inward from the radical segments; a chamber defined interior to the liner; a heating device disposed within the chamber; and a capsule disposed within the chamber, the capsule configured to hold a supercritical fluid. The apparatus may be used for growing crystals, e.g., GaN, under high temperature and pressure conditions.

Inventors:
;
Issue Date:
Research Org.:
SLT Technologies, Inc., Los Angeles, CA (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1496623
Patent Number(s):
10,145,021
Application Number:
13/812,757
Assignee:
SLT Technologies, Inc. (Los Angeles, CA) ARPA-E
DOE Contract Number:  
AR000020
Resource Type:
Patent
Resource Relation:
Patent File Date: 2011 Jul 28
Country of Publication:
United States
Language:
English

Citation Formats

Afimiwala, Kirsh, and Zeng, Larry. Apparatus for processing materials at high temperatures and pressures. United States: N. p., 2018. Web.
Afimiwala, Kirsh, & Zeng, Larry. Apparatus for processing materials at high temperatures and pressures. United States.
Afimiwala, Kirsh, and Zeng, Larry. Tue . "Apparatus for processing materials at high temperatures and pressures". United States. https://www.osti.gov/servlets/purl/1496623.
@article{osti_1496623,
title = {Apparatus for processing materials at high temperatures and pressures},
author = {Afimiwala, Kirsh and Zeng, Larry},
abstractNote = {An apparatus for processing materials at high temperatures comprises a high strength enclosure; a plurality of high strength radial segments disposed adjacent to and radially inward from the high strength enclosure; a liner disposed adjacent to and radially inward from the radical segments; a chamber defined interior to the liner; a heating device disposed within the chamber; and a capsule disposed within the chamber, the capsule configured to hold a supercritical fluid. The apparatus may be used for growing crystals, e.g., GaN, under high temperature and pressure conditions.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2018},
month = {12}
}

Patent:

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