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Title: Process for large-scale ammonothermal manufacturing of semipolar gallium nitride boules

Abstract

Methods for large-scale manufacturing of semipolar gallium nitride boules are disclosed. The disclosed methods comprise suspending large-area single crystal seed plates in a rack, placing the rack in a large diameter autoclave or internally-heated high pressure apparatus along with ammonia and a mineralizer, and growing crystals ammonothermally. A bi-faceted growth morphology may be maintained to facilitate fabrication of large area semipolar wafers without growing thick boules.

Inventors:
; ; ;
Issue Date:
Research Org.:
SLT Technologies, Inc., Los Angeles, CA (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1496622
Patent Number(s):
10145026
Application Number:
13/908,836
Assignee:
SLT Technologies, Inc. (Los Angeles, CA)
Patent Classifications (CPCs):
C - CHEMISTRY C30 - CRYSTAL GROWTH C30B - SINGLE-CRYSTAL-GROWTH
DOE Contract Number:  
SC0006168
Resource Type:
Patent
Resource Relation:
Patent File Date: 2013 Jun 03
Country of Publication:
United States
Language:
English

Citation Formats

D'Evelyn, Mark P., Ehrentraut, Dirk, Kamber, Derrick S., and Downey, Bradley C.. Process for large-scale ammonothermal manufacturing of semipolar gallium nitride boules. United States: N. p., 2018. Web.
D'Evelyn, Mark P., Ehrentraut, Dirk, Kamber, Derrick S., & Downey, Bradley C.. Process for large-scale ammonothermal manufacturing of semipolar gallium nitride boules. United States.
D'Evelyn, Mark P., Ehrentraut, Dirk, Kamber, Derrick S., and Downey, Bradley C.. Tue . "Process for large-scale ammonothermal manufacturing of semipolar gallium nitride boules". United States. https://www.osti.gov/servlets/purl/1496622.
@article{osti_1496622,
title = {Process for large-scale ammonothermal manufacturing of semipolar gallium nitride boules},
author = {D'Evelyn, Mark P. and Ehrentraut, Dirk and Kamber, Derrick S. and Downey, Bradley C.},
abstractNote = {Methods for large-scale manufacturing of semipolar gallium nitride boules are disclosed. The disclosed methods comprise suspending large-area single crystal seed plates in a rack, placing the rack in a large diameter autoclave or internally-heated high pressure apparatus along with ammonia and a mineralizer, and growing crystals ammonothermally. A bi-faceted growth morphology may be maintained to facilitate fabrication of large area semipolar wafers without growing thick boules.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2018},
month = {12}
}

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