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Title: Process for large-scale ammonothermal manufacturing of semipolar gallium nitride boules

Abstract

Methods for large-scale manufacturing of semipolar gallium nitride boules are disclosed. The disclosed methods comprise suspending large-area single crystal seed plates in a rack, placing the rack in a large diameter autoclave or internally-heated high pressure apparatus along with ammonia and a mineralizer, and growing crystals ammonothermally. A bi-faceted growth morphology may be maintained to facilitate fabrication of large area semipolar wafers without growing thick boules.

Inventors:
; ; ;
Issue Date:
Research Org.:
SLT Technologies, Inc., Los Angeles, CA (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1496622
Patent Number(s):
10145026
Application Number:
13/908,836
Assignee:
SLT Technologies, Inc. (Los Angeles, CA)
Patent Classifications (CPCs):
C - CHEMISTRY C30 - CRYSTAL GROWTH C30B - SINGLE-CRYSTAL-GROWTH
DOE Contract Number:  
SC0006168
Resource Type:
Patent
Resource Relation:
Patent File Date: 2013 Jun 03
Country of Publication:
United States
Language:
English

Citation Formats

D'Evelyn, Mark P., Ehrentraut, Dirk, Kamber, Derrick S., and Downey, Bradley C.. Process for large-scale ammonothermal manufacturing of semipolar gallium nitride boules. United States: N. p., 2018. Web.
D'Evelyn, Mark P., Ehrentraut, Dirk, Kamber, Derrick S., & Downey, Bradley C.. Process for large-scale ammonothermal manufacturing of semipolar gallium nitride boules. United States.
D'Evelyn, Mark P., Ehrentraut, Dirk, Kamber, Derrick S., and Downey, Bradley C.. Tue . "Process for large-scale ammonothermal manufacturing of semipolar gallium nitride boules". United States. https://www.osti.gov/servlets/purl/1496622.
@article{osti_1496622,
title = {Process for large-scale ammonothermal manufacturing of semipolar gallium nitride boules},
author = {D'Evelyn, Mark P. and Ehrentraut, Dirk and Kamber, Derrick S. and Downey, Bradley C.},
abstractNote = {Methods for large-scale manufacturing of semipolar gallium nitride boules are disclosed. The disclosed methods comprise suspending large-area single crystal seed plates in a rack, placing the rack in a large diameter autoclave or internally-heated high pressure apparatus along with ammonia and a mineralizer, and growing crystals ammonothermally. A bi-faceted growth morphology may be maintained to facilitate fabrication of large area semipolar wafers without growing thick boules.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2018},
month = {12}
}

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Works referenced in this record:

The Ammonothermal Crystal Growth of Gallium Nitride—A Technique on the Up Rise
journal, July 2010


Deep centers in semi-insulating Fe-doped native GaN substrates grown by hydride vapour phase epitaxy
journal, May 2008


Ammonothermal growth of GaN crystals in alkaline solutions
journal, January 2006


Thermal and optical properties of bulk GaN crystals fabricated through hydride vapor phase epitaxy with void-assisted separation
journal, November 2005


Surfactants in epitaxial growth
journal, August 1989


Analysis of trace Co in synthetic diamonds using synchrotron radiation excited X-ray fluorescence analysis
journal, March 2000


Bulk GaN Ion Cleaving
journal, February 2010


Near Defect Free GaN Substrates
journal, January 1999


Gallium nitride based microcavity light emitting diodes with 2λ effective cavity thickness
journal, January 2007


High reflectivity airgap distributed Bragg reflectors realized by wet etching of AlInN sacrificial layers
journal, November 2009


Recent results and latest views on microcavity LEDs
conference, June 2004


Effect of Fe doping on optical properties of freestanding semi-insulating HVPE GaN:Fe
journal, April 2010


Bulk GaN crystal growth by the high-pressure ammonothermal method
journal, March 2007


Prospects for the ammonothermal growth of large GaN crystal
journal, July 2007


Surfactant mediated epitaxial growth of InxGa1−xAs on GaAs (001)
journal, July 1992


Development of Bulk GaN Crystals and Nonpolar/Semipolar Substrates by HVPE
journal, May 2009


Determination of secondary ion mass spectrometry relative sensitivity factors for polar and non-polar ZnO
journal, November 2011


High Resistivity GaN Single Crystalline Substrates
journal, November 1997


Dynamic compressive strength of silicon carbide under uniaxial compression
journal, October 2001


Synthesis and Growth of Gallium Nitride by the Chemical Vapor Reaction Process (CVRP)
journal, January 1999


Plane Dependent Growth of GaN in Supercritical Basic Ammonia
journal, December 2008


Guest Editorial Special Issue on Light-Emitting Diodes
journal, January 2010


Selective oxidation of AlInN layers for current confinement in III–nitride devices
journal, August 2005


Hydrothermal growth of ZnO single crystals and their optical characterization
journal, June 2000


Structure of the Cl-passivated GaAs(111) surface
journal, November 1998


2.5λ microcavity InGaN light-emitting diodes fabricated by a selective dry-etch thinning process
journal, August 2007


High-pressure synthesis of high-purity diamond crystal
journal, November 1996


High pressure growth of bulk GaN from solutions in gallium
journal, July 2001


Vertically oriented GaN-based air-gap distributed Bragg reflector structure fabricated using band-gap-selective photoelectrochemical etching
journal, August 2005