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Title: Process for large-scale ammonothermal manufacturing of semipolar gallium nitride boules

Abstract

Methods for large-scale manufacturing of semipolar gallium nitride boules are disclosed. The disclosed methods comprise suspending large-area single crystal seed plates in a rack, placing the rack in a large diameter autoclave or internally-heated high pressure apparatus along with ammonia and a mineralizer, and growing crystals ammonothermally. A bi-faceted growth morphology may be maintained to facilitate fabrication of large area semipolar wafers without growing thick boules.

Inventors:
; ; ;
Issue Date:
Research Org.:
SLT Technologies, Inc., Los Angeles, CA (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1496622
Patent Number(s):
10,145,026
Application Number:
13/908,836
Assignee:
SLT TECHNOLOGIES, INC. (Los Angeles, CA) CHO
DOE Contract Number:  
SC0006168
Resource Type:
Patent
Resource Relation:
Patent File Date: 2013 Jun 03
Country of Publication:
United States
Language:
English

Citation Formats

D'Evelyn, Mark P., Ehrentraut, Dirk, Kamber, Derrick S., and Downey, Bradley C. Process for large-scale ammonothermal manufacturing of semipolar gallium nitride boules. United States: N. p., 2018. Web.
D'Evelyn, Mark P., Ehrentraut, Dirk, Kamber, Derrick S., & Downey, Bradley C. Process for large-scale ammonothermal manufacturing of semipolar gallium nitride boules. United States.
D'Evelyn, Mark P., Ehrentraut, Dirk, Kamber, Derrick S., and Downey, Bradley C. Tue . "Process for large-scale ammonothermal manufacturing of semipolar gallium nitride boules". United States. https://www.osti.gov/servlets/purl/1496622.
@article{osti_1496622,
title = {Process for large-scale ammonothermal manufacturing of semipolar gallium nitride boules},
author = {D'Evelyn, Mark P. and Ehrentraut, Dirk and Kamber, Derrick S. and Downey, Bradley C.},
abstractNote = {Methods for large-scale manufacturing of semipolar gallium nitride boules are disclosed. The disclosed methods comprise suspending large-area single crystal seed plates in a rack, placing the rack in a large diameter autoclave or internally-heated high pressure apparatus along with ammonia and a mineralizer, and growing crystals ammonothermally. A bi-faceted growth morphology may be maintained to facilitate fabrication of large area semipolar wafers without growing thick boules.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2018},
month = {12}
}

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Works referenced in this record:

High reflectivity airgap distributed Bragg reflectors realized by wet etching of AlInN sacrificial layers
journal, November 2009

  • Altoukhov, Alexei; Levrat, Jacques; Feltin, Eric
  • Applied Physics Letters, Vol. 95, Issue 19, Article No. 191102
  • DOI: 10.1063/1.3259720

Synthesis and Growth of Gallium Nitride by the Chemical Vapor Reaction Process (CVRP)
journal, January 1999

  • Callahan, M.; Harris, M.; Suscavage, M.
  • MRS Internet Journal of Nitride Semiconductor Research, Vol. 4, Issue 1, Article No. e10
  • DOI: 10.1557/S1092578300000661

2.5? microcavity InGaN light-emitting diodes fabricated by a selective dry-etch thinning process
journal, August 2007

  • Choi, Yong-Seok; Iza, Michael; Matioli, Elison
  • Applied Physics Letters, Vol. 91, Issue 6, Article No. 061120
  • DOI: 10.1063/1.2769397

Surfactants in epitaxial growth
journal, August 1989

  • Copel, M.; Reuter, M. C.; Kaxiras, Efthimios
  • Physical Review Letters, Vol. 63, Issue 6, p. 632-635
  • DOI: 10.1103/PhysRevLett.63.632

Bulk GaN crystal growth by the high-pressure ammonothermal method
journal, March 2007


Selective oxidation of AlInN layers for current confinement in III�nitride devices
journal, August 2005

  • Dorsaz, J.; B�hlmann, H.-J.; Carlin, J.-F.
  • Applied Physics Letters, Vol. 87, Issue 7, Article No. 072102
  • DOI: 10.1063/1.2012533

The Ammonothermal Crystal Growth of Gallium Nitride�A Technique on the Up Rise
journal, July 2010


Deep centers in semi-insulating Fe-doped native GaN substrates grown by hydride vapour phase epitaxy
journal, May 2008

  • Fang, Z.-Q.; Claflin, B.; Look, D. C.
  • physica status solidi (c), Vol. 5, Issue 6, p. 1508-1511
  • DOI: 10.1002/pssc.200778430

Development of Bulk GaN Crystals and Nonpolar/Semipolar Substrates by HVPE
journal, May 2009

  • Fujito, Kenji; Kubo, Shuichi; Fujimura, Isao
  • MRS Bulletin, Vol. 34, Issue 5, p. 313-317
  • DOI: 10.1557/mrs2009.92

Prospects for the ammonothermal growth of large GaN crystal
journal, July 2007


Effect of Fe doping on optical properties of freestanding semi-insulating HVPE GaN:Fe
journal, April 2010


High pressure growth of bulk GaN from solutions in gallium
journal, July 2001


Structure of the Cl-passivated GaAs(111) surface
journal, November 1998

  • Lu, Z. H.; Tyliszczak, T.; Hitchcock, A. P.
  • Physical Review B, Vol. 58, Issue 20, p. 13820-13823
  • DOI: 10.1103/PhysRevB.58.13820

Surfactant mediated epitaxial growth of InxGa1?xAs on GaAs (001)
journal, July 1992

  • Massies, J.; Grandjean, N.; Etgens, V. H.
  • Applied Physics Letters, Vol. 61, Issue 1, p. 99-101
  • DOI: 10.1063/1.107626

Bulk GaN Ion Cleaving
journal, February 2010


Thermal and optical properties of bulk GaN crystals fabricated through hydride vapor phase epitaxy with void-assisted separation
journal, November 2005

  • Oshima, Yuichi; Suzuki, Takayuki; Eri, Takeshi
  • Journal of Applied Physics, Vol. 98, Issue 10, Article No. 103509
  • DOI: 10.1063/1.2132508

Dynamic compressive strength of silicon carbide under uniaxial compression
journal, October 2001


Vertically oriented GaN-based air-gap distributed Bragg reflector structure fabricated using band-gap-selective photoelectrochemical etching
journal, August 2005

  • Sharma, R.; Haberer, E. D.; Meier, C.
  • Applied Physics Letters, Vol. 87, Issue 5, Article No. 051107
  • DOI: 10.1063/1.2008380

High-pressure synthesis of high-purity diamond crystal
journal, November 1996


Partial strain relaxation via misfit dislocation generation at heterointerfaces in (Al,In)GaN epitaxial layers grown on semipolar (112�2) GaN free standing substrates
journal, December 2009

  • Tyagi, Anurag; Wu, Feng; Young, Erin C.
  • Applied Physics Letters, Vol. 95, Issue 25, Article No. 251905
  • DOI: 10.1063/1.3275717

Ammonothermal growth of GaN crystals in alkaline solutions
journal, January 2006


Recent results and latest views on microcavity LEDs
conference, June 2004

  • Weisbuch, Claude; David, Aurelien; Fujii, Tetsuo
  • Integrated Optoelectronic Devices 2004
  • DOI: 10.1117/12.537630

Plane Dependent Growth of GaN in Supercritical Basic Ammonia
journal, December 2008

  • Saito, Makoto; Kamber, Derrick S.; Baker, Troy J.
  • Applied Physics Express, Vol. 1, Issue 12, Article No. 121103
  • DOI: 10.1143/APEX.1.121103