Process for large-scale ammonothermal manufacturing of semipolar gallium nitride boules
Abstract
Methods for large-scale manufacturing of semipolar gallium nitride boules are disclosed. The disclosed methods comprise suspending large-area single crystal seed plates in a rack, placing the rack in a large diameter autoclave or internally-heated high pressure apparatus along with ammonia and a mineralizer, and growing crystals ammonothermally. A bi-faceted growth morphology may be maintained to facilitate fabrication of large area semipolar wafers without growing thick boules.
- Inventors:
- Issue Date:
- Research Org.:
- SLT Technologies, Inc., Los Angeles, CA (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1496622
- Patent Number(s):
- 10145026
- Application Number:
- 13/908,836
- Assignee:
- SLT Technologies, Inc. (Los Angeles, CA)
- Patent Classifications (CPCs):
-
C - CHEMISTRY C30 - CRYSTAL GROWTH C30B - SINGLE-CRYSTAL-GROWTH
- DOE Contract Number:
- SC0006168
- Resource Type:
- Patent
- Resource Relation:
- Patent File Date: 2013 Jun 03
- Country of Publication:
- United States
- Language:
- English
Citation Formats
D'Evelyn, Mark P., Ehrentraut, Dirk, Kamber, Derrick S., and Downey, Bradley C. Process for large-scale ammonothermal manufacturing of semipolar gallium nitride boules. United States: N. p., 2018.
Web.
D'Evelyn, Mark P., Ehrentraut, Dirk, Kamber, Derrick S., & Downey, Bradley C. Process for large-scale ammonothermal manufacturing of semipolar gallium nitride boules. United States.
D'Evelyn, Mark P., Ehrentraut, Dirk, Kamber, Derrick S., and Downey, Bradley C. Tue .
"Process for large-scale ammonothermal manufacturing of semipolar gallium nitride boules". United States. https://www.osti.gov/servlets/purl/1496622.
@article{osti_1496622,
title = {Process for large-scale ammonothermal manufacturing of semipolar gallium nitride boules},
author = {D'Evelyn, Mark P. and Ehrentraut, Dirk and Kamber, Derrick S. and Downey, Bradley C.},
abstractNote = {Methods for large-scale manufacturing of semipolar gallium nitride boules are disclosed. The disclosed methods comprise suspending large-area single crystal seed plates in a rack, placing the rack in a large diameter autoclave or internally-heated high pressure apparatus along with ammonia and a mineralizer, and growing crystals ammonothermally. A bi-faceted growth morphology may be maintained to facilitate fabrication of large area semipolar wafers without growing thick boules.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2018},
month = {12}
}
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