Encoding data within a crossbar memory array
Abstract
In an example, in a method for encoding data within a crossbar memory array containing cells, bits of input data may be received. The received bits of data may be mapped to the cells in a row of the memory array, in which the cells are to be assigned to one of a low resistance state and a high resistance state. A subset of the mapped bits in the row may be grouped into a word pattern. The word pattern may be arranged such that more low resistance states are mapped to cells that are located closer to a voltage source of the row of the memory array than to cells that are located farther away from the voltage source.
- Inventors:
- Issue Date:
- Research Org.:
- Hewlett Packard Enterprise Development LP, Houston, TX (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1495674
- Patent Number(s):
- 10175906
- Application Number:
- 15/325,118
- Assignee:
- Hewlett Packard Enterprise Development LP (Houston, TX)
- Patent Classifications (CPCs):
-
G - PHYSICS G06 - COMPUTING G06F - ELECTRIC DIGITAL DATA PROCESSING
G - PHYSICS G11 - INFORMATION STORAGE G11C - STATIC STORES
- DOE Contract Number:
- SC0005026
- Resource Type:
- Patent
- Resource Relation:
- Patent File Date: 2014 Jul 31
- Country of Publication:
- United States
- Language:
- English
Citation Formats
Muralimanohar, Naveen, Ordentlich, Erik, and Xu, Cong. Encoding data within a crossbar memory array. United States: N. p., 2019.
Web.
Muralimanohar, Naveen, Ordentlich, Erik, & Xu, Cong. Encoding data within a crossbar memory array. United States.
Muralimanohar, Naveen, Ordentlich, Erik, and Xu, Cong. Tue .
"Encoding data within a crossbar memory array". United States. https://www.osti.gov/servlets/purl/1495674.
@article{osti_1495674,
title = {Encoding data within a crossbar memory array},
author = {Muralimanohar, Naveen and Ordentlich, Erik and Xu, Cong},
abstractNote = {In an example, in a method for encoding data within a crossbar memory array containing cells, bits of input data may be received. The received bits of data may be mapped to the cells in a row of the memory array, in which the cells are to be assigned to one of a low resistance state and a high resistance state. A subset of the mapped bits in the row may be grouped into a word pattern. The word pattern may be arranged such that more low resistance states are mapped to cells that are located closer to a voltage source of the row of the memory array than to cells that are located farther away from the voltage source.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2019},
month = {1}
}
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