Title: High-quality, single-crystalline silicon-germanium films

Abstract

High-quality, single-crystalline silicon-germanium (Si.sub.(1-x)Ge.sub.x) having a high germanium content is provided. Layers of the high-quality, single-crystalline silicon-germanium can be grown to high sub-critical thicknesses and then released from their growth substrates to provide Si.sub.(1-x)Ge.sub.x films without lattice mismatch-induced misfit dislocations or a mosaic distribution of crystallographic orientations.

Inventors:

Lagally, Max G.; Kuech, Thomas Francis; Guan, Yingxin; Scott, Shelley A.; Bhat, Abhishek; Cui, Xiaorui

Issue Date:

2019-01-08

Research Org.:

Wisconsin Alumni Research Foundation, Madison, WI (United States)

Sponsoring Org.:

USDOE

OSTI Identifier:

1495665

Patent Number(s):

10176991

Application Number:

15/643,111

Assignee:

Wisconsin Alumni Research Foundation (Madison, WI)

Patent Classifications (CPCs):

C - CHEMISTRY C30 - CRYSTAL GROWTH C30B - SINGLE-CRYSTAL-GROWTH

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

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C - CHEMISTRY C30 - CRYSTAL GROWTH C30B - SINGLE-CRYSTAL-GROWTH

C30B25/02 - Epitaxial-layer growth
C30B29/08 - Germanium
C30B29/52 - Alloys
C30B29/68 - Crystals with laminate structure, e.g. "superlattices"

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

H01L21/02002 - {Preparing wafers}
H01L21/02395 - {Arsenides}
H01L21/02461 - {Phosphides}
H01L21/02463 - {Arsenides}
H01L21/02532 - {Silicon, silicon germanium, germanium}
H01L21/0262 - {Reduction or decomposition of gaseous compounds, e.g. CVD}
H01L21/02694 - {Controlling the interface between substrate and epitaxial layer, e.g. by ion implantation followed by annealing}
H01L21/7813 - {leaving a reusable substrate, e.g. epitaxial lift off}
H01L29/1054 - {with a variation of the composition, e.g. channel with strained layer for increasing the mobility}
H01L29/161 - including two or more of the elements provided for in group H01L29/16 {, e.g. alloys
H01L29/165 - in different semiconductor regions {, e.g. heterojunctions}
H01L29/42304 - {Base electrodes for bipolar transistors}
H01L29/7378 - {comprising lattice mismatched active layers, e.g. SiGe strained layer transistors}
H01L29/7782 - {with confinement of carriers by at least two heterojunctions, e.g. DHHEMT, quantum well HEMT, DHMODFET}
H01L29/7786 - {with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT}
H01L29/78 - with field effect produced by an insulated gate {
H01L31/035254 - {including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System, e.g. Si-SiGe superlattices}
H01L31/109 - the potential barrier being of the PN heterojunction type
H01L31/1812 - {including only AIVBIV alloys, e.g. SiGe}
H01L31/1892 - {methods involving the use of temporary, removable substrates}

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DOE Contract Number:  

FG02-03ER46028

Resource Type:

Patent

Resource Relation:

Patent File Date: 2017 Jul 06

Country of Publication:

United States

Language:

English