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Title: High-quality, single-crystalline silicon-germanium films

Abstract

High-quality, single-crystalline silicon-germanium (Si.sub.(1-x)Ge.sub.x) having a high germanium content is provided. Layers of the high-quality, single-crystalline silicon-germanium can be grown to high sub-critical thicknesses and then released from their growth substrates to provide Si.sub.(1-x)Ge.sub.x films without lattice mismatch-induced misfit dislocations or a mosaic distribution of crystallographic orientations.

Inventors:
; ; ; ; ;
Issue Date:
Research Org.:
Wisconsin Alumni Research Foundation, Madison, WI (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1495665
Patent Number(s):
10176991
Application Number:
15/643,111
Assignee:
Wisconsin Alumni Research Foundation (Madison, WI)
Patent Classifications (CPCs):
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
C - CHEMISTRY C30 - CRYSTAL GROWTH C30B - SINGLE-CRYSTAL-GROWTH
DOE Contract Number:  
FG02-03ER46028
Resource Type:
Patent
Resource Relation:
Patent File Date: 2017 Jul 06
Country of Publication:
United States
Language:
English

Citation Formats

Lagally, Max G., Kuech, Thomas Francis, Guan, Yingxin, Scott, Shelley A., Bhat, Abhishek, and Cui, Xiaorui. High-quality, single-crystalline silicon-germanium films. United States: N. p., 2019. Web.
Lagally, Max G., Kuech, Thomas Francis, Guan, Yingxin, Scott, Shelley A., Bhat, Abhishek, & Cui, Xiaorui. High-quality, single-crystalline silicon-germanium films. United States.
Lagally, Max G., Kuech, Thomas Francis, Guan, Yingxin, Scott, Shelley A., Bhat, Abhishek, and Cui, Xiaorui. Tue . "High-quality, single-crystalline silicon-germanium films". United States. https://www.osti.gov/servlets/purl/1495665.
@article{osti_1495665,
title = {High-quality, single-crystalline silicon-germanium films},
author = {Lagally, Max G. and Kuech, Thomas Francis and Guan, Yingxin and Scott, Shelley A. and Bhat, Abhishek and Cui, Xiaorui},
abstractNote = {High-quality, single-crystalline silicon-germanium (Si.sub.(1-x)Ge.sub.x) having a high germanium content is provided. Layers of the high-quality, single-crystalline silicon-germanium can be grown to high sub-critical thicknesses and then released from their growth substrates to provide Si.sub.(1-x)Ge.sub.x films without lattice mismatch-induced misfit dislocations or a mosaic distribution of crystallographic orientations.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2019},
month = {1}
}

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Works referenced in this record:

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