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Title: Method for fabrication of superlattices and aperiodic layered structures using solution deposition

Abstract

A method for forming inorganic structures includes (a) transferring nanocrystals to a polar protic solvent using at least one chalcogenide precursor to produce a negatively-charged chalcogen-rich nanocrystal surface, (b) removing excess anions of the chalcogenide precursor, (c) introducing a metal salt to bind a divalent metal cation to the negatively-charged chalcogen-rich nanocrystal surface to regenerate a positively-charged metal-rich nanocrystal surface, and (d) removing excess divalent metal cations of the metal acetate salt.

Inventors:
;
Issue Date:
Research Org.:
Argonne National Lab. (ANL), Argonne, IL (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1495349
Patent Number(s):
10,138,134
Application Number:
15/644,602
Assignee:
UChicago Argonne, LLC (Chicago, IL)
DOE Contract Number:  
AC02-06CH11357
Resource Type:
Patent
Resource Relation:
Patent File Date: 2017 Jul 07
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Diroll, Benjamin, and Schaller, Richard D. Method for fabrication of superlattices and aperiodic layered structures using solution deposition. United States: N. p., 2018. Web.
Diroll, Benjamin, & Schaller, Richard D. Method for fabrication of superlattices and aperiodic layered structures using solution deposition. United States.
Diroll, Benjamin, and Schaller, Richard D. Tue . "Method for fabrication of superlattices and aperiodic layered structures using solution deposition". United States. https://www.osti.gov/servlets/purl/1495349.
@article{osti_1495349,
title = {Method for fabrication of superlattices and aperiodic layered structures using solution deposition},
author = {Diroll, Benjamin and Schaller, Richard D.},
abstractNote = {A method for forming inorganic structures includes (a) transferring nanocrystals to a polar protic solvent using at least one chalcogenide precursor to produce a negatively-charged chalcogen-rich nanocrystal surface, (b) removing excess anions of the chalcogenide precursor, (c) introducing a metal salt to bind a divalent metal cation to the negatively-charged chalcogen-rich nanocrystal surface to regenerate a positively-charged metal-rich nanocrystal surface, and (d) removing excess divalent metal cations of the metal acetate salt.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2018},
month = {11}
}

Patent:

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