Title: Vertically integrated optoelectronics package for MEMS devices

Abstract

The present application relates to vertically integrated assemblies including a MEMS-based optomechanical architecture. In some embodiments, the assembly includes a MEMS/optoelectronic module, an emitter module, and a detector module, where these modules are vertically integrated. Methods of fabricating such assemblies are also described herein.

Inventors:

Homeijer, Brian D.; Eichenfield, Matt

Issue Date:

2018-11-27

Research Org.:

Sandia National Laboratories (SNL), Albuquerque, NM, and Livermore, CA (United States)

Sponsoring Org.:

USDOE

OSTI Identifier:

1495213

Patent Number(s):

10139564

Application Number:

15/009,153

Assignee:

National Technology & Engineering Solutions of Sandia, LLC (Albuquerque, NM)

Patent Classifications (CPCs):

G - PHYSICS G02 - OPTICS G02B - OPTICAL ELEMENTS, SYSTEMS, OR APPARATUS

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01S - DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT

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G - PHYSICS G02 - OPTICS G02B - OPTICAL ELEMENTS, SYSTEMS, OR APPARATUS

G02B6/1225 - {comprising photonic band-gap structures or photonic lattices}
G02B6/34 - utilising prism or grating {
G02B6/4214 - {the intermediate optical element having redirecting reflective means, e.g. mirrors, prisms for deflecting the radiation from horizontal to down- or upward direction toward a device
G02B6/4232 - {using the surface tension of fluid solder to align the elements, e.g. solder bump techniques
G02B6/43 - Arrangements comprising a plurality of opto-electronic elements and associated optical interconnections

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01S - DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT

H01S5/0683 - by monitoring the optical output parameters
H01S5/18308 - {having a special structure for lateral current or light confinement}
H01S5/343 - in AIIIBV compounds, e.g. AlGaAs-laser {, InP-based laser}
H01S5/423 - {having a vertical cavity}
H01S5/426 - {Vertically stacked cavities}

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DOE Contract Number:  

AC04-94AL85000

Resource Type:

Patent

Resource Relation:

Patent File Date: 2016 Jan 28

Country of Publication:

United States

Language:

English

Subject:

42 ENGINEERING