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Title: Method for depositing transparent conducting oxides

Abstract

A method of preparing light transmitting conducting metal oxide (TCO) films using atomic layer deposition (ALD) of a metal precursor multiple oxidizing reactants. The multiple metal oxidizing reactants may be selected to enhance growth of the TCO film. In a particular embodiment, an indium oxide TCO film is prepared using a cyclopentadienyl indium precursor and a combination of water and oxygen.

Inventors:
;
Issue Date:
Research Org.:
Argonne National Lab. (ANL), Argonne, IL (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1495042
Patent Number(s):
10131991
Application Number:
12/895,305
Assignee:
UChicago Argonne, LLC (Chicago, IL)
Patent Classifications (CPCs):
C - CHEMISTRY C23 - COATING METALLIC MATERIAL C23C - COATING METALLIC MATERIAL
DOE Contract Number:  
AC02-06CH11357
Resource Type:
Patent
Resource Relation:
Patent File Date: 2010 Sep 30
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Elam, Jeffrey W., and Libera, Joseph A.. Method for depositing transparent conducting oxides. United States: N. p., 2018. Web.
Elam, Jeffrey W., & Libera, Joseph A.. Method for depositing transparent conducting oxides. United States.
Elam, Jeffrey W., and Libera, Joseph A.. Tue . "Method for depositing transparent conducting oxides". United States. https://www.osti.gov/servlets/purl/1495042.
@article{osti_1495042,
title = {Method for depositing transparent conducting oxides},
author = {Elam, Jeffrey W. and Libera, Joseph A.},
abstractNote = {A method of preparing light transmitting conducting metal oxide (TCO) films using atomic layer deposition (ALD) of a metal precursor multiple oxidizing reactants. The multiple metal oxidizing reactants may be selected to enhance growth of the TCO film. In a particular embodiment, an indium oxide TCO film is prepared using a cyclopentadienyl indium precursor and a combination of water and oxygen.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2018},
month = {11}
}

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Works referenced in this record:

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Viscous flow reactor with quartz crystal microbalance for thin film growth by atomic layer deposition
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  • Elam, Jeffrey W.; Baker, David A.; Hryn, Alexander J.
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