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Title: Methods of growing CdTe-based materials at high rates

Abstract

Systems and methods for growing high-quality CdTe-based materials at high growth rates are provided. According to an aspect of the invention, a method includes depositing a first CdTe-based layer on a CdTe-based template at a rate of greater than 1 .mu.m/min. Each of the first CdTe-based layer and the CdTe-based template has a single-crystal structure and/or a large-grain polycrystalline structure. The depositing is performed by physical vapor deposition.

Inventors:
; ; ; ; ; ;
Issue Date:
Research Org.:
National Renewable Energy Lab. (NREL), Golden, CO (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1494136
Patent Number(s):
10,134,590
Application Number:
15/470,195
Assignee:
Alliance for Sustainable Energy, LLC (Golden, CO) NREL
DOE Contract Number:  
AC36-08GO28308
Resource Type:
Patent
Resource Relation:
Patent File Date: 2017 Mar 27
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Burst, James M., Albin, David S., Colegrove, Eric, Reese, Matthew O., Moutinho, Helio R., Metzger, Wyatt K., and Duenow, Joel N. Methods of growing CdTe-based materials at high rates. United States: N. p., 2018. Web.
Burst, James M., Albin, David S., Colegrove, Eric, Reese, Matthew O., Moutinho, Helio R., Metzger, Wyatt K., & Duenow, Joel N. Methods of growing CdTe-based materials at high rates. United States.
Burst, James M., Albin, David S., Colegrove, Eric, Reese, Matthew O., Moutinho, Helio R., Metzger, Wyatt K., and Duenow, Joel N. Tue . "Methods of growing CdTe-based materials at high rates". United States. https://www.osti.gov/servlets/purl/1494136.
@article{osti_1494136,
title = {Methods of growing CdTe-based materials at high rates},
author = {Burst, James M. and Albin, David S. and Colegrove, Eric and Reese, Matthew O. and Moutinho, Helio R. and Metzger, Wyatt K. and Duenow, Joel N.},
abstractNote = {Systems and methods for growing high-quality CdTe-based materials at high growth rates are provided. According to an aspect of the invention, a method includes depositing a first CdTe-based layer on a CdTe-based template at a rate of greater than 1 .mu.m/min. Each of the first CdTe-based layer and the CdTe-based template has a single-crystal structure and/or a large-grain polycrystalline structure. The depositing is performed by physical vapor deposition.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2018},
month = {11}
}

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