Reliable electrical contacts for high power photoconductive switches
Abstract
A photoconductive switch consisting of an optically actuated photoconductive material, e.g. a wide bandgap semiconductor such as SiC, situated between opposing electrodes. The electrodes are created using various methods in order to maximize reliability by reducing resistive heating, current concentrations and filamentation, and heating and ablation due to the light source. This is primarily accomplished by the configuration of the electrical contact geometry, choice of contacts metals, annealing, ion implantation, creation of recesses within the SiC, and the use of coatings to act as encapsulants and anti-reflective layers.
- Inventors:
- Issue Date:
- Research Org.:
- Lawrence Livermore National Laboratory (LLNL), Livermore, CA (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1494134
- Patent Number(s):
- 10134927
- Application Number:
- 15/206,133
- Assignee:
- Lawrence Livermore National Security, LLC (Livermore, CA)
- Patent Classifications (CPCs):
-
G - PHYSICS G02 - OPTICS G02B - OPTICAL ELEMENTS, SYSTEMS, OR APPARATUS
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
- DOE Contract Number:
- AC52-07NA27344
- Resource Type:
- Patent
- Resource Relation:
- Patent File Date: 2016 Jul 08
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 42 ENGINEERING
Citation Formats
Voss, Lars, Bora, Mihail, Caporaso, George, Conway, Adam, Nguyen, Hoang T., Nikolic, Rebecca J., Sampayan, Stephen E., and Park, Sangtae. Reliable electrical contacts for high power photoconductive switches. United States: N. p., 2018.
Web.
Voss, Lars, Bora, Mihail, Caporaso, George, Conway, Adam, Nguyen, Hoang T., Nikolic, Rebecca J., Sampayan, Stephen E., & Park, Sangtae. Reliable electrical contacts for high power photoconductive switches. United States.
Voss, Lars, Bora, Mihail, Caporaso, George, Conway, Adam, Nguyen, Hoang T., Nikolic, Rebecca J., Sampayan, Stephen E., and Park, Sangtae. Tue .
"Reliable electrical contacts for high power photoconductive switches". United States. https://www.osti.gov/servlets/purl/1494134.
@article{osti_1494134,
title = {Reliable electrical contacts for high power photoconductive switches},
author = {Voss, Lars and Bora, Mihail and Caporaso, George and Conway, Adam and Nguyen, Hoang T. and Nikolic, Rebecca J. and Sampayan, Stephen E. and Park, Sangtae},
abstractNote = {A photoconductive switch consisting of an optically actuated photoconductive material, e.g. a wide bandgap semiconductor such as SiC, situated between opposing electrodes. The electrodes are created using various methods in order to maximize reliability by reducing resistive heating, current concentrations and filamentation, and heating and ablation due to the light source. This is primarily accomplished by the configuration of the electrical contact geometry, choice of contacts metals, annealing, ion implantation, creation of recesses within the SiC, and the use of coatings to act as encapsulants and anti-reflective layers.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2018},
month = {11}
}
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Works referenced in this record:
Ultra-wideband high power photon triggered frequency independent radiator
patent, July 1993
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- US Patent Document 5,227,621
Photoconductive switch with doping adapted to the intensity distribution of an illumination source thereof
patent, August 2000
- Skytt, Per; Johansson, Erik; Irwin, Mark
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