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Title: Achieving band gap grading of CZTS and CZTSe materials

Abstract

Techniques for achieving band gap grading in CZTS/Se absorber materials are provided. In one aspect, a method for creating band gap grading in a CZTS/Se absorber layer includes the steps of: providing a reservoir material containing Si or Ge; forming the CZTS/Se absorber layer on the reservoir material; and annealing the reservoir material and the CZTS/Se absorber layer under conditions sufficient to diffuse Si or Ge atoms from the reservoir material into the CZTS/Se absorber layer with a concentration gradient to create band gap grading in the CZTS/Se absorber layer. A photovoltaic device and method of forming the photovoltaic device are also provided.

Inventors:
; ; ;
Issue Date:
Research Org.:
International Business Machines Corp., Armonk, NY (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1494133
Patent Number(s):
10,134,929
Application Number:
14/883,300
Assignee:
International Business Machines Corporation (Armonk, NY)
DOE Contract Number:  
EE0006334
Resource Type:
Patent
Resource Relation:
Patent File Date: 2015 Oct 14
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Gershon, Talia S., Haight, Richard A., Hopstaken, Marinus, and Lee, Yun Seog. Achieving band gap grading of CZTS and CZTSe materials. United States: N. p., 2018. Web.
Gershon, Talia S., Haight, Richard A., Hopstaken, Marinus, & Lee, Yun Seog. Achieving band gap grading of CZTS and CZTSe materials. United States.
Gershon, Talia S., Haight, Richard A., Hopstaken, Marinus, and Lee, Yun Seog. Tue . "Achieving band gap grading of CZTS and CZTSe materials". United States. https://www.osti.gov/servlets/purl/1494133.
@article{osti_1494133,
title = {Achieving band gap grading of CZTS and CZTSe materials},
author = {Gershon, Talia S. and Haight, Richard A. and Hopstaken, Marinus and Lee, Yun Seog},
abstractNote = {Techniques for achieving band gap grading in CZTS/Se absorber materials are provided. In one aspect, a method for creating band gap grading in a CZTS/Se absorber layer includes the steps of: providing a reservoir material containing Si or Ge; forming the CZTS/Se absorber layer on the reservoir material; and annealing the reservoir material and the CZTS/Se absorber layer under conditions sufficient to diffuse Si or Ge atoms from the reservoir material into the CZTS/Se absorber layer with a concentration gradient to create band gap grading in the CZTS/Se absorber layer. A photovoltaic device and method of forming the photovoltaic device are also provided.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2018},
month = {11}
}

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Works referenced in this record:

Cu 2 Zn(Sn,Ge)Se 4 and Cu 2 Zn(Sn,Si)Se 4 alloys as photovoltaic materials: Structural and electronic properties
journal, March 2013


Epitaxial growth of kesterite Cu2ZnSnS4 on a Si(001) substrate by thermal co-evaporation
journal, April 2014


A new approach to high-efficiency solar cells by band gap grading in Cu(In,Ga)Se2 chalcopyrite semiconductors
journal, March 2001


Enhancing the performance of CZTSSe solar cells with Ge alloying
journal, October 2012


Hydrazine-Processed Ge-Substituted CZTSe Solar Cells
journal, November 2012

  • Bag, Santanu; Gunawan, Oki; Gokmen, Tayfun
  • Chemistry of Materials, Vol. 24, Issue 23
  • DOI: 10.1021/cm302881g

Crystal chemistry and optical investigations of the Cu2Zn(Sn,Si)S4 series for photovoltaic applications
journal, December 2014

  • Hamdi, Mohamed; Lafond, Alain; Guillot-Deudon, Catherine
  • Journal of Solid State Chemistry, Vol. 220, p. 232-237
  • DOI: 10.1016/j.jssc.2014.08.030

Compositional dependence of structural and electronic properties of Cu 2 ZnSn(S,Se) 4 alloys for thin film solar cells
journal, March 2011


The effect of Na in polycrystalline and epitaxial single-crystal CuIn1−xGaxSe2
journal, June 2005