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Title: Achieving band gap grading of CZTS and CZTSe materials

Abstract

Techniques for achieving band gap grading in CZTS/Se absorber materials are provided. In one aspect, a method for creating band gap grading in a CZTS/Se absorber layer includes the steps of: providing a reservoir material containing Si or Ge; forming the CZTS/Se absorber layer on the reservoir material; and annealing the reservoir material and the CZTS/Se absorber layer under conditions sufficient to diffuse Si or Ge atoms from the reservoir material into the CZTS/Se absorber layer with a concentration gradient to create band gap grading in the CZTS/Se absorber layer. A photovoltaic device and method of forming the photovoltaic device are also provided.

Inventors:
; ; ;
Issue Date:
Research Org.:
International Business Machines Corporation, Armonk, NY (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1494133
Patent Number(s):
10,134,929
Application Number:
14/883,300
Assignee:
International Business Machines Corporation (Armonk, NY) DOEEE
DOE Contract Number:  
EE0006334
Resource Type:
Patent
Resource Relation:
Patent File Date: 2015 Oct 14
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Gershon, Talia S., Haight, Richard A., Hopstaken, Marinus, and Lee, Yun Seog. Achieving band gap grading of CZTS and CZTSe materials. United States: N. p., 2018. Web.
Gershon, Talia S., Haight, Richard A., Hopstaken, Marinus, & Lee, Yun Seog. Achieving band gap grading of CZTS and CZTSe materials. United States.
Gershon, Talia S., Haight, Richard A., Hopstaken, Marinus, and Lee, Yun Seog. Tue . "Achieving band gap grading of CZTS and CZTSe materials". United States. https://www.osti.gov/servlets/purl/1494133.
@article{osti_1494133,
title = {Achieving band gap grading of CZTS and CZTSe materials},
author = {Gershon, Talia S. and Haight, Richard A. and Hopstaken, Marinus and Lee, Yun Seog},
abstractNote = {Techniques for achieving band gap grading in CZTS/Se absorber materials are provided. In one aspect, a method for creating band gap grading in a CZTS/Se absorber layer includes the steps of: providing a reservoir material containing Si or Ge; forming the CZTS/Se absorber layer on the reservoir material; and annealing the reservoir material and the CZTS/Se absorber layer under conditions sufficient to diffuse Si or Ge atoms from the reservoir material into the CZTS/Se absorber layer with a concentration gradient to create band gap grading in the CZTS/Se absorber layer. A photovoltaic device and method of forming the photovoltaic device are also provided.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2018},
month = {11}
}

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Works referenced in this record:

The effect of Na in polycrystalline and epitaxial single-crystal CuIn1?xGaxSe2
journal, June 2005