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Title: Achieving band gap grading of CZTS and CZTSe materials

Abstract

Techniques for achieving band gap grading in CZTS/Se absorber materials are provided. In one aspect, a method for creating band gap grading in a CZTS/Se absorber layer includes the steps of: providing a reservoir material containing Si or Ge; forming the CZTS/Se absorber layer on the reservoir material; and annealing the reservoir material and the CZTS/Se absorber layer under conditions sufficient to diffuse Si or Ge atoms from the reservoir material into the CZTS/Se absorber layer with a concentration gradient to create band gap grading in the CZTS/Se absorber layer. A photovoltaic device and method of forming the photovoltaic device are also provided.

Inventors:
; ; ;
Issue Date:
Research Org.:
International Business Machines Corp., Armonk, NY (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1494133
Patent Number(s):
10134929
Application Number:
14/883,300
Assignee:
International Business Machines Corporation (Armonk, NY)
Patent Classifications (CPCs):
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
DOE Contract Number:  
EE0006334
Resource Type:
Patent
Resource Relation:
Patent File Date: 2015 Oct 14
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Gershon, Talia S., Haight, Richard A., Hopstaken, Marinus, and Lee, Yun Seog. Achieving band gap grading of CZTS and CZTSe materials. United States: N. p., 2018. Web.
Gershon, Talia S., Haight, Richard A., Hopstaken, Marinus, & Lee, Yun Seog. Achieving band gap grading of CZTS and CZTSe materials. United States.
Gershon, Talia S., Haight, Richard A., Hopstaken, Marinus, and Lee, Yun Seog. Tue . "Achieving band gap grading of CZTS and CZTSe materials". United States. https://www.osti.gov/servlets/purl/1494133.
@article{osti_1494133,
title = {Achieving band gap grading of CZTS and CZTSe materials},
author = {Gershon, Talia S. and Haight, Richard A. and Hopstaken, Marinus and Lee, Yun Seog},
abstractNote = {Techniques for achieving band gap grading in CZTS/Se absorber materials are provided. In one aspect, a method for creating band gap grading in a CZTS/Se absorber layer includes the steps of: providing a reservoir material containing Si or Ge; forming the CZTS/Se absorber layer on the reservoir material; and annealing the reservoir material and the CZTS/Se absorber layer under conditions sufficient to diffuse Si or Ge atoms from the reservoir material into the CZTS/Se absorber layer with a concentration gradient to create band gap grading in the CZTS/Se absorber layer. A photovoltaic device and method of forming the photovoltaic device are also provided.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2018},
month = {11}
}

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Works referenced in this record:

Cu 2 Zn(Sn,Ge)Se 4 and Cu 2 Zn(Sn,Si)Se 4 alloys as photovoltaic materials: Structural and electronic properties
journal, March 2013


Epitaxial growth of kesterite Cu2ZnSnS4 on a Si(001) substrate by thermal co-evaporation
journal, April 2014


A new approach to high-efficiency solar cells by band gap grading in Cu(In,Ga)Se2 chalcopyrite semiconductors
journal, March 2001


Enhancing the performance of CZTSSe solar cells with Ge alloying
journal, October 2012


Hydrazine-Processed Ge-Substituted CZTSe Solar Cells
journal, November 2012


Crystal chemistry and optical investigations of the Cu2Zn(Sn,Si)S4 series for photovoltaic applications
journal, December 2014