Achieving band gap grading of CZTS and CZTSe materials

Gershon, Talia S.; Haight, Richard A.; Hopstaken, Marinus; Lee, Yun Seog

Advanced Search OptionsAdvanced Search queries use a traditional Term Search. For more info, see our FAQ.

All Fields:

Patent Title:

Abstract:

Assignee:

Inventor(s):

Patent Number:

Patent Classification (CPC):

All Classifications
A - human necessities
A01 - agriculture
A21 - baking
A22 - butchering
A23 - foods or foodstuffs
A24 - tobacco
A41 - wearing apparel
A42 - headwear
A43 - footwear
A44 - haberdashery
A45 - hand or travelling articles
A46 - brushware
A47 - furniture
A61 - medical or veterinary science
A62 - life-saving
A63 - sports
A99 - subject matter not otherwise provided for in this section
B - performing operations
B01 - physical or chemical processes or apparatus in general
B02 - crushing, pulverising, or disintegrating
B03 - separation of solid materials using liquids or using pneumatic tables or jigs
B04 - centrifugal apparatus or machines for carrying-out physical or chemical processes
B05 - spraying or atomising in general
B06 - generating or transmitting mechanical vibrations in general
B07 - separating solids from solids
B08 - cleaning
B09 - disposal of solid waste
B21 - mechanical metal-working without essentially removing material
B22 - casting
B23 - machine tools
B24 - grinding
B25 - hand tools
B26 - hand cutting tools
B27 - working or preserving wood or similar material
B28 - working cement, clay, or stone
B29 - working of plastics
B30 - presses
B31 - making articles of paper, cardboard or material worked in a manner analogous to paper
B32 - layered products
B33 - additive manufacturing technology
B41 - printing
B42 - bookbinding
B43 - writing or drawing implements
B44 - decorative arts
B60 - vehicles in general
B61 - railways
B62 - land vehicles for travelling otherwise than on rails
B63 - ships or other waterborne vessels
B64 - aircraft
B65 - conveying
B66 - hoisting
B67 - opening, closing {or cleaning} bottles, jars or similar containers
B68 - saddlery
B81 - microstructural technology
B82 - nanotechnology
B99 - subject matter not otherwise provided for in this section
C - chemistry
C01 - inorganic chemistry
C02 - treatment of water, waste water, sewage, or sludge
C03 - glass
C04 - cements
C05 - fertilisers
C06 - explosives
C07 - organic chemistry
C08 - organic macromolecular compounds
C09 - dyes
C10 - petroleum, gas or coke industries
C11 - animal or vegetable oils, fats, fatty substances or waxes
C12 - biochemistry
C13 - sugar industry
C14 - skins
C21 - metallurgy of iron
C22 - metallurgy
C23 - coating metallic material
C25 - electrolytic or electrophoretic processes
C30 - crystal growth
C40 - combinatorial technology
C99 - subject matter not otherwise provided for in this section
D - textiles
D01 - natural or man-made threads or fibres
D02 - yarns
D03 - weaving
D04 - braiding
D05 - sewing
D06 - treatment of textiles or the like
D07 - ropes
D10 - indexing scheme associated with sublasses of section d, relating to textiles
D21 - paper-making
D99 - subject matter not otherwise provided for in this section
E - fixed constructions
E01 - construction of roads, railways, or bridges
E02 - hydraulic engineering
E03 - water supply
E04 - building
E05 - locks
E06 - doors, windows, shutters, or roller blinds in general
E21 - earth drilling
E99 - subject matter not otherwise provided for in this section
F - mechanical engineering
F01 - machines or engines in general
F02 - combustion engines
F03 - machines or engines for liquids
F04 - positive - displacement machines for liquids
F05 - indexing schemes relating to engines or pumps in various subclasses of classes f01-f04
F15 - fluid-pressure actuators
F16 - engineering elements and units
F17 - storing or distributing gases or liquids
F21 - lighting
F22 - steam generation
F23 - combustion apparatus
F24 - heating
F25 - refrigeration or cooling
F26 - drying
F27 - furnaces
F28 - heat exchange in general
F41 - weapons
F42 - ammunition
F99 - subject matter not otherwise provided for in this section
G - physics
G01 - measuring
G02 - optics
G03 - photography
G04 - horology
G05 - controlling
G06 - computing
G07 - checking-devices
G08 - signalling
G09 - education
G10 - musical instruments
G11 - information storage
G12 - instrument details
G16 - information and communication technology [ict] specially adapted for specific application fields
G21 - nuclear physics
G99 - subject matter not otherwise provided for in this section
H - electricity
H01 - basic electric elements
H02 - generation
H03 - basic electronic circuitry
H04 - electric communication technique
H05 - electric techniques not otherwise provided for
H99 - subject matter not otherwise provided for in this section
Y - new / cross sectional technologies
Y02 - technologies or applications for mitigation or adaptation against climate change
Y04 - information or communication technologies having an impact on other technology areas
Y10 - technical subjects covered by former uspc

More Options ...

Title: Achieving band gap grading of CZTS and CZTSe materials

Abstract

Techniques for achieving band gap grading in CZTS/Se absorber materials are provided. In one aspect, a method for creating band gap grading in a CZTS/Se absorber layer includes the steps of: providing a reservoir material containing Si or Ge; forming the CZTS/Se absorber layer on the reservoir material; and annealing the reservoir material and the CZTS/Se absorber layer under conditions sufficient to diffuse Si or Ge atoms from the reservoir material into the CZTS/Se absorber layer with a concentration gradient to create band gap grading in the CZTS/Se absorber layer. A photovoltaic device and method of forming the photovoltaic device are also provided.

Inventors:: Gershon, Talia S.; Haight, Richard A.; Hopstaken, Marinus; Lee, Yun Seog

Issue Date:: 2018-11-20

Research Org.:: International Business Machines Corp., Armonk, NY (United States)

Sponsoring Org.:: USDOE

OSTI Identifier:: 1494133

Patent Number(s):: 10134929

Application Number:: 14/883,300

Assignee:: International Business Machines Corporation (Armonk, NY)

Patent Classifications (CPCs):: H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION

Show more

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
H01L21/02381 - {Silicon, silicon germanium, germanium}
H01L21/0245 - {Silicon, silicon germanium, germanium}
H01L21/02474 - {Sulfides}
H01L21/02477 - {Selenides}
H01L21/02485 - {Other chalcogenide semiconducting materials not being oxides, e.g. ternary compounds}
H01L21/0251 - {Graded layers}
H01L21/02557 - {Sulfides}
H01L21/0256 - {Selenides}
H01L21/02568 - {Chalcogenide semiconducting materials not being oxides, e.g. ternary compounds}
H01L21/02573 - {Conductivity type}
H01L21/02664 - {Aftertreatments
H01L31/0326 - {comprising AIBIICIVDVI kesterite compounds, e.g. Cu2ZnSnSe4, Cu2ZnSnS4}
H01L31/0392 - including thin films deposited on metallic or insulating substrates {
H01L31/065 - the potential barriers being only of the graded gap type
H01L31/072 - the potential barriers being only of the PN heterojunction type
H01L31/1864 - {Annealing}
H01L31/1892 - {methods involving the use of temporary, removable substrates}

Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
Y02E10/50 - Photovoltaic [PV] energy

Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02P - CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
Y02P70/50 - Manufacturing or production processes characterised by the final manufactured product

Show less

DOE Contract Number:: EE0006334

Resource Type:: Patent

Resource Relation:: Patent File Date: 2015 Oct 14

Country of Publication:: United States

Language:: English

Subject:: 36 MATERIALS SCIENCE

Citation Formats


                    Gershon, Talia S., Haight, Richard A., Hopstaken, Marinus, and Lee, Yun Seog. Achieving band gap grading of CZTS and CZTSe materials.  United States: N. p., 2018. 
        Web.

Copy to clipboard


                    Gershon, Talia S., Haight, Richard A., Hopstaken, Marinus, & Lee, Yun Seog. Achieving band gap grading of CZTS and CZTSe materials.  United States.

Copy to clipboard


                    Gershon, Talia S., Haight, Richard A., Hopstaken, Marinus, and Lee, Yun Seog. Tue .  
        "Achieving band gap grading of CZTS and CZTSe materials".  United States.  https://www.osti.gov/servlets/purl/1494133.

Copy to clipboard


                    
@article{osti_1494133,

  title        = {Achieving band gap grading of CZTS and CZTSe materials},

  author       = {Gershon, Talia S. and Haight, Richard A. and Hopstaken, Marinus and Lee, Yun Seog},

  abstractNote = {Techniques for achieving band gap grading in CZTS/Se absorber materials are provided. In one aspect, a method for creating band gap grading in a CZTS/Se absorber layer includes the steps of: providing a reservoir material containing Si or Ge; forming the CZTS/Se absorber layer on the reservoir material; and annealing the reservoir material and the CZTS/Se absorber layer under conditions sufficient to diffuse Si or Ge atoms from the reservoir material into the CZTS/Se absorber layer with a concentration gradient to create band gap grading in the CZTS/Se absorber layer. A photovoltaic device and method of forming the photovoltaic device are also provided.},

  doi          = {},

  journal      = {},
number       = ,

  volume       = ,

  place        = {United States},

  year         = {2018},

  month        = {11}

}

Copy to clipboard

Patent:

Save / Share:

Export Metadata

Save to My Library

Works referenced in this record:

GeSn alloys and ordered phases with direct tunable bandgaps grown directly on silicon
patent, September 2009

Kouvetakis, John; Bauer, Matthew; Menendez, Jose
US Patent Document 7,589,003
URL: https://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/7589003

Cu $_{2}$ Zn(Sn,Ge)Se $_{4}$ and Cu $_{2}$ Zn(Sn,Si)Se $_{4}$ alloys as photovoltaic materials: Structural and electronic properties
journal, March 2013

Shu, Qiang; Yang, Ji-Hui; Chen, Shiyou
Physical Review B, Vol. 87, Issue 11, Article No. 115208
https://doi.org/10.1103/PhysRevB.87.115208

Epitaxial growth of kesterite Cu2ZnSnS4 on a Si(001) substrate by thermal co-evaporation
journal, April 2014

Shin, Byungha; Zhu, Yu; Gershon, Talia
Thin Solid Films, Vol. 556
https://doi.org/10.1016/j.tsf.2013.12.046

A new approach to high-efficiency solar cells by band gap grading in Cu(In,Ga)Se2 chalcopyrite semiconductors
journal, March 2001

Dullweber, T.; anna, G. H.; Rau, U.
Solar Energy Materials and Solar Cells, Vol. 67, Issue 1-4
https://doi.org/10.1016/S0927-0248(00)00274-9

Enhancing the performance of CZTSSe solar cells with Ge alloying
journal, October 2012

Guo, Qijie; Ford, Grayson M.; Yang, Wei-Chang
Solar Energy Materials and Solar Cells, Vol. 105
https://doi.org/10.1016/j.solmat.2012.05.039

Hydrazine-Processed Ge-Substituted CZTSe Solar Cells
journal, November 2012

Bag, Santanu; Gunawan, Oki; Gokmen, Tayfun
Chemistry of Materials, Vol. 24, Issue 23
https://doi.org/10.1021/cm302881g

Crystal chemistry and optical investigations of the Cu₂Zn(Sn,Si)S₄ series for photovoltaic applications
journal, December 2014

Hamdi, Mohamed; Lafond, Alain; Guillot-Deudon, Catherine
Journal of Solid State Chemistry, Vol. 220, p. 232-237
https://doi.org/10.1016/j.jssc.2014.08.030

Compositional dependence of structural and electronic properties of Cu $_{2}$ ZnSn(S,Se) $_{4}$ alloys for thin film solar cells
journal, March 2011

Chen, Shiyou; Walsh, Aron; Yang, Ji-Hui
Physical Review B, Vol. 83, Issue 12
https://doi.org/10.1103/PhysRevB.83.125201

The effect of Na in polycrystalline and epitaxial single-crystal CuIn_1−xGa_xSe₂
journal, June 2005

Rockett, A.
Thin Solid Films, Vol. 480-481, p. 2-7
https://doi.org/10.1016/j.tsf.2004.11.038

Similar Records in DOE Patents and OSTI.GOV collections:

Fabrication of photonic band gap materials using microtransfer molded templates

Patent Leung, Wai; Constant, Kristen; Ho, Kai-Ming; ...

A method of manufacturing photonic band gap structures operable in the optical spectrum has been presented. The method comprises the steps of creating a patterned template for an elastomeric mold, fabricating an elastomeric mold from poly-dimethylsiloxane (PDMS) or other suitable polymer, filling the elastomeric mold with a second polymer such as epoxy or other suitable polymer, stamping the second polymer by making contact with a substrate or multilayer structure, removing the elastomeric mold, infiltrating the multilayer structure with ceramic or metal, and heating the multilayer structure to remove the second polymer to form a photonic band gap structure.
Full Text Available
Method for implantation of high dopant concentrations in wide band gap materials

Patent Usov, Igor [Los Alamos, NM]; Arendt, Paul N [Los Alamos, NM]

A method that combines alternate low/medium ion dose implantation with rapid thermal annealing at relatively low temperatures. At least one dopant is implanted in one of a single crystal and an epitaxial film of the wide band gap compound by a plurality of implantation cycles. The number of implantation cycles is sufficient to implant a predetermined concentration of the dopant in one of the single crystal and the epitaxial film. Each of the implantation cycles includes the steps of: implanting a portion of the predetermined concentration of the one dopant in one of the single crystal and the epitaxial film;more » « less
Full Text Available
Multi-junction, monolithic solar cell using low-band-gap materials lattice matched to GaAs or Ge

Patent Olson, Jerry M [Lakewood, CO]; Kurtz, Sarah R [Golden, CO]; Friedman, Daniel J [Lakewood, CO]

A multi-junction, monolithic, photovoltaic solar cell device is provided for converting solar radiation to photocurrent and photovoltage with improved efficiency. The solar cell device comprises a plurality of semiconductor cells, i.e., active p/n junctions, connected in tandem and deposited on a substrate fabricated from GaAs or Ge. To increase efficiency, each semiconductor cell is fabricated from a crystalline material with a lattice constant substantially equivalent to the lattice constant of the substrate material. Additionally, the semiconductor cells are selected with appropriate band gaps to efficiently create photovoltage from a larger portion of the solar spectrum. In this regard, one semiconductormore » « less
Full Text Available
Fabrication of photonic band gap materials

Patent Constant, Kristen [Ames, IA]; Subramania, Ganapathi S [Ames, IA]; Biswas, Rana [Ames, IA]; ...

A method for forming a periodic dielectric structure exhibiting photonic band gap effects includes forming a slurry of a nano-crystalline ceramic dielectric or semiconductor material and monodisperse polymer microspheres, depositing a film of the slurry on a substrate, drying the film, and calcining the film to remove the polymer microspheres therefrom. The film may be cold-pressed after drying and prior to calcining. The ceramic dielectric or semiconductor material may be titania, and the polymer microspheres may be polystyrene microspheres.
Full Text Available
Method of fabricating n-type and p-type microcrystalline semiconductor alloy material including band gap widening elements

Patent Guha, Subhendu [Troy, MI]; Ovshinsky, Stanford R [Bloomfield Hills, MI]

A method of fabricating doped microcrystalline semiconductor alloy material which includes a band gap widening element through a glow discharge deposition process by subjecting a precursor mixture which includes a diluent gas to an a.c. glow discharge in the absence of a magnetic field of sufficient strength to induce electron cyclotron resonance.
Full Text Available

Similar Records

Title: Achieving band gap grading of CZTS and CZTSe materials

Abstract

Citation Formats

GeSn alloys and ordered phases with direct tunable bandgaps grown directly on silicon patent, September 2009

Cu 2 Zn(Sn,Ge)Se 4 and Cu 2 Zn(Sn,Si)Se 4 alloys as photovoltaic materials: Structural and electronic properties journal, March 2013

Epitaxial growth of kesterite Cu2ZnSnS4 on a Si(001) substrate by thermal co-evaporation journal, April 2014

A new approach to high-efficiency solar cells by band gap grading in Cu(In,Ga)Se2 chalcopyrite semiconductors journal, March 2001

Enhancing the performance of CZTSSe solar cells with Ge alloying journal, October 2012

Hydrazine-Processed Ge-Substituted CZTSe Solar Cells journal, November 2012

Crystal chemistry and optical investigations of the Cu2Zn(Sn,Si)S4 series for photovoltaic applications journal, December 2014

Compositional dependence of structural and electronic properties of Cu 2 ZnSn(S,Se) 4 alloys for thin film solar cells journal, March 2011

The effect of Na in polycrystalline and epitaxial single-crystal CuIn1−xGaxSe2 journal, June 2005

GeSn alloys and ordered phases with direct tunable bandgaps grown directly on silicon
patent, September 2009

Cu $_{2}$ Zn(Sn,Ge)Se $_{4}$ and Cu $_{2}$ Zn(Sn,Si)Se $_{4}$ alloys as photovoltaic materials: Structural and electronic properties
journal, March 2013

Epitaxial growth of kesterite Cu2ZnSnS4 on a Si(001) substrate by thermal co-evaporation
journal, April 2014

A new approach to high-efficiency solar cells by band gap grading in Cu(In,Ga)Se2 chalcopyrite semiconductors
journal, March 2001

Enhancing the performance of CZTSSe solar cells with Ge alloying
journal, October 2012

Hydrazine-Processed Ge-Substituted CZTSe Solar Cells
journal, November 2012

Crystal chemistry and optical investigations of the Cu₂Zn(Sn,Si)S₄ series for photovoltaic applications
journal, December 2014

Compositional dependence of structural and electronic properties of Cu $_{2}$ ZnSn(S,Se) $_{4}$ alloys for thin film solar cells
journal, March 2011

The effect of Na in polycrystalline and epitaxial single-crystal CuIn_1−xGa_xSe₂
journal, June 2005