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Title: Metamorphic solar cell having improved current generation

Abstract

A semiconductor device structure having increased photogenerated current density, and increased current output is disclosed. The device includes low bandgap absorber regions that increase the range of wavelengths at which photogeneration of charge carriers takes place, and for which useful current can be collected. The low bandgap absorber regions may be strain balanced by strain-compensation regions, and the low bandgap absorber regions and strain-compensation regions may be formed from the same ternary semiconductor family. The device may be a solar cell, subcell, or other optoelectronic device with a metamorphic or lattice-mismatched base layer, for which the low bandgap absorber region improves the effective bandgap combination of subcells and current balance within the multijunction cell, for higher efficiency conversion of the solar spectrum.

Inventors:
; ; ;
Issue Date:
Research Org.:
National Renewable Energy Lab. (NREL), Golden, CO (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1493299
Patent Number(s):
10,170,652
Application Number:
13/069,274
Assignee:
THE BOEING COMPANY (Chicago, IL)
Resource Type:
Patent
Resource Relation:
Patent File Date: 2019 Jan 01
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY

Citation Formats

King, Richard R., Fetzer, Christopher M., Krut, Dimitri D., and Karam, Nasser H. Metamorphic solar cell having improved current generation. United States: N. p., 2019. Web.
King, Richard R., Fetzer, Christopher M., Krut, Dimitri D., & Karam, Nasser H. Metamorphic solar cell having improved current generation. United States.
King, Richard R., Fetzer, Christopher M., Krut, Dimitri D., and Karam, Nasser H. Tue . "Metamorphic solar cell having improved current generation". United States. https://www.osti.gov/servlets/purl/1493299.
@article{osti_1493299,
title = {Metamorphic solar cell having improved current generation},
author = {King, Richard R. and Fetzer, Christopher M. and Krut, Dimitri D. and Karam, Nasser H.},
abstractNote = {A semiconductor device structure having increased photogenerated current density, and increased current output is disclosed. The device includes low bandgap absorber regions that increase the range of wavelengths at which photogeneration of charge carriers takes place, and for which useful current can be collected. The low bandgap absorber regions may be strain balanced by strain-compensation regions, and the low bandgap absorber regions and strain-compensation regions may be formed from the same ternary semiconductor family. The device may be a solar cell, subcell, or other optoelectronic device with a metamorphic or lattice-mismatched base layer, for which the low bandgap absorber region improves the effective bandgap combination of subcells and current balance within the multijunction cell, for higher efficiency conversion of the solar spectrum.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2019},
month = {1}
}

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Works referenced in this record:

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