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Title: Phosphorus incorporation for n-type doping of diamond with (100) and related surface orientation

Abstract

Apparatuses and methods are provided for manufacturing diamond electronic devices. The method includes at least one of the following acts: positioning a substrate in a plasma enhanced chemical vapor deposition (PECVD) reactor; controlling temperature of the substrate by manipulating microwave power, chamber pressure, and gas flow rates of the PECVD reactor; and growing phosphorus doped diamond layer on the substrate using a pulsed deposition comprising a growth cycle and a cooling cycle.

Inventors:
; ;
Issue Date:
Research Org.:
ARIZONA BOARD OF REGENTS ON BEHALF OF ARIZONA STATE UNIVERSITY, Scottsdale, AZ (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1492817
Patent Number(s):
10121657
Application Number:
15/151,295
Assignee:
ARIZONA BOARD OF REGENTS ON BEHALF OF ARIZONA STATE UNIVERSITY (Scottsdale, AZ)
Patent Classifications (CPCs):
C - CHEMISTRY C23 - COATING METALLIC MATERIAL C23C - COATING METALLIC MATERIAL
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
DOE Contract Number:  
AR0000453
Resource Type:
Patent
Resource Relation:
Patent File Date: 2016 May 10
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Koeck, Franz A., Chowdhury, Srabanti, and Nemanich, Robert J.. Phosphorus incorporation for n-type doping of diamond with (100) and related surface orientation. United States: N. p., 2018. Web.
Koeck, Franz A., Chowdhury, Srabanti, & Nemanich, Robert J.. Phosphorus incorporation for n-type doping of diamond with (100) and related surface orientation. United States.
Koeck, Franz A., Chowdhury, Srabanti, and Nemanich, Robert J.. Tue . "Phosphorus incorporation for n-type doping of diamond with (100) and related surface orientation". United States. https://www.osti.gov/servlets/purl/1492817.
@article{osti_1492817,
title = {Phosphorus incorporation for n-type doping of diamond with (100) and related surface orientation},
author = {Koeck, Franz A. and Chowdhury, Srabanti and Nemanich, Robert J.},
abstractNote = {Apparatuses and methods are provided for manufacturing diamond electronic devices. The method includes at least one of the following acts: positioning a substrate in a plasma enhanced chemical vapor deposition (PECVD) reactor; controlling temperature of the substrate by manipulating microwave power, chamber pressure, and gas flow rates of the PECVD reactor; and growing phosphorus doped diamond layer on the substrate using a pulsed deposition comprising a growth cycle and a cooling cycle.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2018},
month = {11}
}

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Works referenced in this record:

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