Nitride based devices including a symmetrical quantum well active layer having a central low bandgap delta-layer
Abstract
A symmetrical quantum well active layer provides enhanced internal quantum efficiency. The quantum well active layer includes an inner (central) layer and a pair of outer layers sandwiching the inner layer. The inner and outer layers have different thicknesses and bandgap characteristics. The outer layers are relatively thick and include a relatively low bandgap material, such as InGaN. The inner layer has a relatively lower bandgap material and is sufficiently thin to act as a quantum well delta layer, e.g., comprising approximately 6 .ANG. or less of InN. Such a quantum well structure advantageously extends the emission wavelength into the yellow/red spectral regime, and enhances spontaneous emission. The multi-layer quantum well active layer is sandwiched by barrier layers of high bandgap materials, such as GaN.
- Inventors:
- Issue Date:
- Research Org.:
- Lehigh Univ., Bethlehem, PA (United States); National Energy Technology Laboratory (NETL), Pittsburgh, PA, Morgantown, WV, and Albany, OR (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1492025
- Patent Number(s):
- 10115859
- Application Number:
- 12/968,960
- Assignee:
- Lehigh University (Bethleham, PA)
- Patent Classifications (CPCs):
-
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
- DOE Contract Number:
- FC26-08NT01581
- Resource Type:
- Patent
- Resource Relation:
- Patent File Date: 2010 Dec 15
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 47 OTHER INSTRUMENTATION
Citation Formats
Tansu, Nelson, Zhao, Hongping, Liu, Guangyu, and Huang, Gensheng. Nitride based devices including a symmetrical quantum well active layer having a central low bandgap delta-layer. United States: N. p., 2018.
Web.
Tansu, Nelson, Zhao, Hongping, Liu, Guangyu, & Huang, Gensheng. Nitride based devices including a symmetrical quantum well active layer having a central low bandgap delta-layer. United States.
Tansu, Nelson, Zhao, Hongping, Liu, Guangyu, and Huang, Gensheng. Tue .
"Nitride based devices including a symmetrical quantum well active layer having a central low bandgap delta-layer". United States. https://www.osti.gov/servlets/purl/1492025.
@article{osti_1492025,
title = {Nitride based devices including a symmetrical quantum well active layer having a central low bandgap delta-layer},
author = {Tansu, Nelson and Zhao, Hongping and Liu, Guangyu and Huang, Gensheng},
abstractNote = {A symmetrical quantum well active layer provides enhanced internal quantum efficiency. The quantum well active layer includes an inner (central) layer and a pair of outer layers sandwiching the inner layer. The inner and outer layers have different thicknesses and bandgap characteristics. The outer layers are relatively thick and include a relatively low bandgap material, such as InGaN. The inner layer has a relatively lower bandgap material and is sufficiently thin to act as a quantum well delta layer, e.g., comprising approximately 6 .ANG. or less of InN. Such a quantum well structure advantageously extends the emission wavelength into the yellow/red spectral regime, and enhances spontaneous emission. The multi-layer quantum well active layer is sandwiched by barrier layers of high bandgap materials, such as GaN.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2018},
month = {10}
}
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