Nitride based devices including a symmetrical quantum well active layer having a central low bandgap delta-layer
Abstract
A symmetrical quantum well active layer provides enhanced internal quantum efficiency. The quantum well active layer includes an inner (central) layer and a pair of outer layers sandwiching the inner layer. The inner and outer layers have different thicknesses and bandgap characteristics. The outer layers are relatively thick and include a relatively low bandgap material, such as InGaN. The inner layer has a relatively lower bandgap material and is sufficiently thin to act as a quantum well delta layer, e.g., comprising approximately 6 .ANG. or less of InN. Such a quantum well structure advantageously extends the emission wavelength into the yellow/red spectral regime, and enhances spontaneous emission. The multi-layer quantum well active layer is sandwiched by barrier layers of high bandgap materials, such as GaN.
- Inventors:
- Issue Date:
- Research Org.:
- Lehigh Univ., Bethlehem, PA (United States); National Energy Technology Laboratory (NETL), Pittsburgh, PA, Morgantown, WV, and Albany, OR (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1492025
- Patent Number(s):
- 10115859
- Application Number:
- 12/968,960
- Assignee:
- Lehigh University (Bethleham, PA)
- Patent Classifications (CPCs):
-
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
- DOE Contract Number:
- FC26-08NT01581
- Resource Type:
- Patent
- Resource Relation:
- Patent File Date: 2010 Dec 15
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 47 OTHER INSTRUMENTATION
Citation Formats
Tansu, Nelson, Zhao, Hongping, Liu, Guangyu, and Huang, Gensheng. Nitride based devices including a symmetrical quantum well active layer having a central low bandgap delta-layer. United States: N. p., 2018.
Web.
Tansu, Nelson, Zhao, Hongping, Liu, Guangyu, & Huang, Gensheng. Nitride based devices including a symmetrical quantum well active layer having a central low bandgap delta-layer. United States.
Tansu, Nelson, Zhao, Hongping, Liu, Guangyu, and Huang, Gensheng. Tue .
"Nitride based devices including a symmetrical quantum well active layer having a central low bandgap delta-layer". United States. https://www.osti.gov/servlets/purl/1492025.
@article{osti_1492025,
title = {Nitride based devices including a symmetrical quantum well active layer having a central low bandgap delta-layer},
author = {Tansu, Nelson and Zhao, Hongping and Liu, Guangyu and Huang, Gensheng},
abstractNote = {A symmetrical quantum well active layer provides enhanced internal quantum efficiency. The quantum well active layer includes an inner (central) layer and a pair of outer layers sandwiching the inner layer. The inner and outer layers have different thicknesses and bandgap characteristics. The outer layers are relatively thick and include a relatively low bandgap material, such as InGaN. The inner layer has a relatively lower bandgap material and is sufficiently thin to act as a quantum well delta layer, e.g., comprising approximately 6 .ANG. or less of InN. Such a quantum well structure advantageously extends the emission wavelength into the yellow/red spectral regime, and enhances spontaneous emission. The multi-layer quantum well active layer is sandwiched by barrier layers of high bandgap materials, such as GaN.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2018},
month = {10}
}
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Works referenced in this record:
Photoluminescence property of InGaN single quantum well with embedded AlGaN δ layer
journal, May 2006
- Park, Jongwoon; Kawakami, Yoichi
- Applied Physics Letters, Vol. 88, Issue 20, Article No. 202107
Analysis of InGaN-delta-InN quantum wells for light-emitting diodes
journal, September 2010
- Zhao, Hongping; Liu, Guangyu; Tansu, Nelson
- Applied Physics Letters, Vol. 97, Issue 13
Growths of staggered InGaN quantum wells light-emitting diodes emitting at 520–525 nm employing graded growth-temperature profile
journal, August 2009
- Zhao, Hongping; Liu, Guangyu; Li, Xiao-Hang
- Applied Physics Letters, Vol. 95, Issue 6
1-2 ML thick InN-based quantum wells with InGaN barriers for blue-green light emitters
journal, January 2009
- Yuki, Akihiko; Watanabe, Hiroshi; Che, Song-Bek
- physica status solidi (c), Vol. 6, Issue S2
Optical gain characteristics of staggered InGaN quantum wells lasers
journal, June 2010
- Zhao, Hongping; Tansu, Nelson
- Journal of Applied Physics, Vol. 107, Issue 11, Article No. 113110
Polarization engineering via staggered InGaN quantum wells for radiative efficiency enhancement of light emitting diodes
journal, August 2007
- Arif, Ronald A.; Ee, Yik-Khoon; Tansu, Nelson
- Applied Physics Letters, Vol. 91, Issue 9
Spontaneous Emission and Characteristics of Staggered InGaN Quantum-Well Light-Emitting Diodes
journal, June 2008
- Arif, Ronald A.; Zhao, Hongping; Ee, Yik-Khoon
- IEEE Journal of Quantum Electronics, Vol. 44, Issue 6, p. 573-580
Optical gain in InGaN∕GaN quantum well structures with embedded AlGaN δ layer
journal, January 2007
- Park, Seoung-Hwan; Park, Jongwoon; Yoon, Euijoon
- Applied Physics Letters, Vol. 90, Issue 2, Article No. 023508
Design and characteristics of staggered InGaN quantum-well light-emitting diodes in the green spectral regime
journal, December 2009
- Zhao, H. P.; Dierolf, V.; Liu, G. Y.
- IET Optoelectronics, Vol. 3, Issue 6
Design Analysis of Staggered InGaN Quantum Wells Light-Emitting Diodes at 500–540 nm
journal, July 2009
- Zhao, H.; Arif, R. A.; Tansu, N.
- IEEE Journal of Selected Topics in Quantum Electronics, Vol. 15, Issue 4, p. 1104-1114