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  • Nitride based devices including a symmetrical quantum well active layer having a central low bandgap delta-layer

Title: Nitride based devices including a symmetrical quantum well active layer having a central low bandgap delta-layer

A symmetrical quantum well active layer provides enhanced internal quantum efficiency. The quantum well active layer includes an inner (central) layer and a pair of outer layers sandwiching the inner layer. The inner and outer layers have different thicknesses and bandgap characteristics. The outer layers are relatively thick and include a relatively low bandgap material, such as InGaN. The inner layer has a relatively lower bandgap material and is sufficiently thin to act as a quantum well delta layer, e.g., comprising approximately 6 .ANG. or less of InN. Such a quantum well structure advantageously extends the emission wavelength into the yellow/red spectral regime, and enhances spontaneous emission. The multi-layer quantum well active layer is sandwiched by barrier layers of high bandgap materials, such as GaN.
Inventors:
; ; ;
Issue Date:
OSTI Identifier:
1492025
Assignee:
Lehigh University (Bethleham, PA) NETL
Patent Number(s):
10,115,859
Application Number:
12/968,960
Contract Number:
FC26-08NT01581
Resource Relation:
Patent File Date: 2010 Dec 15
Research Org:
Lehigh University, Bethleham, PA (United States)
Sponsoring Org:
USDOE
Country of Publication:
United States
Language:
English
Subject:
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Works referenced in this record:

Photoluminescence property of InGaN single quantum well with embedded AlGaN δ layer
journal, May 2006
  • Park, Jongwoon; Kawakami, Yoichi
  • Applied Physics Letters, Vol. 88, Issue 20, Article No. 202107
  • DOI: 10.1063/1.2205731

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