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Title: Nitride based devices including a symmetrical quantum well active layer having a central low bandgap delta-layer

Abstract

A symmetrical quantum well active layer provides enhanced internal quantum efficiency. The quantum well active layer includes an inner (central) layer and a pair of outer layers sandwiching the inner layer. The inner and outer layers have different thicknesses and bandgap characteristics. The outer layers are relatively thick and include a relatively low bandgap material, such as InGaN. The inner layer has a relatively lower bandgap material and is sufficiently thin to act as a quantum well delta layer, e.g., comprising approximately 6 .ANG. or less of InN. Such a quantum well structure advantageously extends the emission wavelength into the yellow/red spectral regime, and enhances spontaneous emission. The multi-layer quantum well active layer is sandwiched by barrier layers of high bandgap materials, such as GaN.

Inventors:
; ; ;
Issue Date:
Research Org.:
Lehigh Univ., Bethlehem, PA (United States); National Energy Technology Laboratory (NETL), Pittsburgh, PA, Morgantown, WV, and Albany, OR (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1492025
Patent Number(s):
10115859
Application Number:
12/968,960
Assignee:
Lehigh University (Bethleham, PA)
Patent Classifications (CPCs):
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
DOE Contract Number:  
FC26-08NT01581
Resource Type:
Patent
Resource Relation:
Patent File Date: 2010 Dec 15
Country of Publication:
United States
Language:
English
Subject:
47 OTHER INSTRUMENTATION

Citation Formats

Tansu, Nelson, Zhao, Hongping, Liu, Guangyu, and Huang, Gensheng. Nitride based devices including a symmetrical quantum well active layer having a central low bandgap delta-layer. United States: N. p., 2018. Web.
Tansu, Nelson, Zhao, Hongping, Liu, Guangyu, & Huang, Gensheng. Nitride based devices including a symmetrical quantum well active layer having a central low bandgap delta-layer. United States.
Tansu, Nelson, Zhao, Hongping, Liu, Guangyu, and Huang, Gensheng. Tue . "Nitride based devices including a symmetrical quantum well active layer having a central low bandgap delta-layer". United States. https://www.osti.gov/servlets/purl/1492025.
@article{osti_1492025,
title = {Nitride based devices including a symmetrical quantum well active layer having a central low bandgap delta-layer},
author = {Tansu, Nelson and Zhao, Hongping and Liu, Guangyu and Huang, Gensheng},
abstractNote = {A symmetrical quantum well active layer provides enhanced internal quantum efficiency. The quantum well active layer includes an inner (central) layer and a pair of outer layers sandwiching the inner layer. The inner and outer layers have different thicknesses and bandgap characteristics. The outer layers are relatively thick and include a relatively low bandgap material, such as InGaN. The inner layer has a relatively lower bandgap material and is sufficiently thin to act as a quantum well delta layer, e.g., comprising approximately 6 .ANG. or less of InN. Such a quantum well structure advantageously extends the emission wavelength into the yellow/red spectral regime, and enhances spontaneous emission. The multi-layer quantum well active layer is sandwiched by barrier layers of high bandgap materials, such as GaN.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2018},
month = {10}
}

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Works referenced in this record:

Photoluminescence property of InGaN single quantum well with embedded AlGaN δ layer
journal, May 2006


Analysis of InGaN-delta-InN quantum wells for light-emitting diodes
journal, September 2010


Growths of staggered InGaN quantum wells light-emitting diodes emitting at 520–525 nm employing graded growth-temperature profile
journal, August 2009


1-2 ML thick InN-based quantum wells with InGaN barriers for blue-green light emitters
journal, January 2009


Optical gain characteristics of staggered InGaN quantum wells lasers
journal, June 2010


Polarization engineering via staggered InGaN quantum wells for radiative efficiency enhancement of light emitting diodes
journal, August 2007


Spontaneous Emission and Characteristics of Staggered InGaN Quantum-Well Light-Emitting Diodes
journal, June 2008


Optical gain in InGaN∕GaN quantum well structures with embedded AlGaN δ layer
journal, January 2007


Design and characteristics of staggered InGaN quantum-well light-emitting diodes in the green spectral regime
journal, December 2009


Design Analysis of Staggered InGaN Quantum Wells Light-Emitting Diodes at 500–540 nm
journal, July 2009