Nitride based devices including a symmetrical quantum well active layer having a central low bandgap delta-layer

Tansu, Nelson; Zhao, Hongping; Liu, Guangyu; Huang, Gensheng

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Title: Nitride based devices including a symmetrical quantum well active layer having a central low bandgap delta-layer

Abstract

A symmetrical quantum well active layer provides enhanced internal quantum efficiency. The quantum well active layer includes an inner (central) layer and a pair of outer layers sandwiching the inner layer. The inner and outer layers have different thicknesses and bandgap characteristics. The outer layers are relatively thick and include a relatively low bandgap material, such as InGaN. The inner layer has a relatively lower bandgap material and is sufficiently thin to act as a quantum well delta layer, e.g., comprising approximately 6 .ANG. or less of InN. Such a quantum well structure advantageously extends the emission wavelength into the yellow/red spectral regime, and enhances spontaneous emission. The multi-layer quantum well active layer is sandwiched by barrier layers of high bandgap materials, such as GaN.

Inventors:: Tansu, Nelson; Zhao, Hongping; Liu, Guangyu; Huang, Gensheng

Issue Date:: 2018-10-30

Research Org.:: Lehigh Univ., Bethlehem, PA (United States); National Energy Technology Laboratory (NETL), Pittsburgh, PA, Morgantown, WV, and Albany, OR (United States)

Sponsoring Org.:: USDOE

OSTI Identifier:: 1492025

Patent Number(s):: 10115859

Application Number:: 12/968,960

Assignee:: Lehigh University (Bethleham, PA)

Patent Classifications (CPCs):: H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

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H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
H01L33/06 - within the light emitting region, e.g. quantum confinement structure or tunnel barrier
H01L33/32 - containing nitrogen

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DOE Contract Number:: FC26-08NT01581

Resource Type:: Patent

Resource Relation:: Patent File Date: 2010 Dec 15

Country of Publication:: United States

Language:: English

Subject:: 47 OTHER INSTRUMENTATION

Citation Formats


                    Tansu, Nelson, Zhao, Hongping, Liu, Guangyu, and Huang, Gensheng. Nitride based devices including a symmetrical quantum well active layer having a central low bandgap delta-layer.  United States: N. p., 2018. 
        Web.

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                    Tansu, Nelson, Zhao, Hongping, Liu, Guangyu, & Huang, Gensheng. Nitride based devices including a symmetrical quantum well active layer having a central low bandgap delta-layer.  United States.

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                    Tansu, Nelson, Zhao, Hongping, Liu, Guangyu, and Huang, Gensheng. Tue .  
        "Nitride based devices including a symmetrical quantum well active layer having a central low bandgap delta-layer".  United States.  https://www.osti.gov/servlets/purl/1492025.

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@article{osti_1492025,

  title        = {Nitride based devices including a symmetrical quantum well active layer having a central low bandgap delta-layer},

  author       = {Tansu, Nelson and Zhao, Hongping and Liu, Guangyu and Huang, Gensheng},

  abstractNote = {A symmetrical quantum well active layer provides enhanced internal quantum efficiency. The quantum well active layer includes an inner (central) layer and a pair of outer layers sandwiching the inner layer. The inner and outer layers have different thicknesses and bandgap characteristics. The outer layers are relatively thick and include a relatively low bandgap material, such as InGaN. The inner layer has a relatively lower bandgap material and is sufficiently thin to act as a quantum well delta layer, e.g., comprising approximately 6 .ANG. or less of InN. Such a quantum well structure advantageously extends the emission wavelength into the yellow/red spectral regime, and enhances spontaneous emission. The multi-layer quantum well active layer is sandwiched by barrier layers of high bandgap materials, such as GaN.},

  doi          = {},

  journal      = {},
number       = ,

  volume       = ,

  place        = {United States},

  year         = {2018},

  month        = {10}

}

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Similar Records

Title: Nitride based devices including a symmetrical quantum well active layer having a central low bandgap delta-layer

Abstract

Citation Formats

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Chirped multi-well active region LED
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1-2 ML thick InN-based quantum wells with InGaN barriers for blue-green light emitters
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Methods of fabricating light emitting devices using mesa regions and passivation layers
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Group III nitride LED with silicon carbide substrate
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