Nitride based devices including a symmetrical quantum well active layer having a central low bandgap delta-layer

Title: Nitride based devices including a symmetrical quantum well active layer having a central low bandgap delta-layer

Abstract

A symmetrical quantum well active layer provides enhanced internal quantum efficiency. The quantum well active layer includes an inner (central) layer and a pair of outer layers sandwiching the inner layer. The inner and outer layers have different thicknesses and bandgap characteristics. The outer layers are relatively thick and include a relatively low bandgap material, such as InGaN. The inner layer has a relatively lower bandgap material and is sufficiently thin to act as a quantum well delta layer, e.g., comprising approximately 6 .ANG. or less of InN. Such a quantum well structure advantageously extends the emission wavelength into the yellow/red spectral regime, and enhances spontaneous emission. The multi-layer quantum well active layer is sandwiched by barrier layers of high bandgap materials, such as GaN.

Inventors:: Tansu, Nelson; Zhao, Hongping; Liu, Guangyu; Huang, Gensheng

Issue Date:: 2018-10-30

Research Org.:: Lehigh Univ., Bethlehem, PA (United States); National Energy Technology Laboratory (NETL), Pittsburgh, PA, Morgantown, WV, and Albany, OR (United States)

Sponsoring Org.:: USDOE

OSTI Identifier:: 1492025

Patent Number(s):: 10115859

Application Number:: 12/968,960

Assignee:: Lehigh University (Bethleham, PA)

Patent Classifications (CPCs):: H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

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H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
H01L33/06 - within the light emitting region, e.g. quantum confinement structure or tunnel barrier
H01L33/32 - containing nitrogen

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DOE Contract Number:: FC26-08NT01581

Resource Type:: Patent

Resource Relation:: Patent File Date: 2010 Dec 15

Country of Publication:: United States

Language:: English

Subject:: 47 OTHER INSTRUMENTATION

Citation Formats


                    Tansu, Nelson, Zhao, Hongping, Liu, Guangyu, and Huang, Gensheng. Nitride based devices including a symmetrical quantum well active layer having a central low bandgap delta-layer.  United States: N. p., 2018. 
        Web.

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                    Tansu, Nelson, Zhao, Hongping, Liu, Guangyu, & Huang, Gensheng. Nitride based devices including a symmetrical quantum well active layer having a central low bandgap delta-layer.  United States.

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                    Tansu, Nelson, Zhao, Hongping, Liu, Guangyu, and Huang, Gensheng. Tue .  
        "Nitride based devices including a symmetrical quantum well active layer having a central low bandgap delta-layer".  United States.  https://www.osti.gov/servlets/purl/1492025.

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@article{osti_1492025,

  title        = {Nitride based devices including a symmetrical quantum well active layer having a central low bandgap delta-layer},

  author       = {Tansu, Nelson and Zhao, Hongping and Liu, Guangyu and Huang, Gensheng},

  abstractNote = {A symmetrical quantum well active layer provides enhanced internal quantum efficiency. The quantum well active layer includes an inner (central) layer and a pair of outer layers sandwiching the inner layer. The inner and outer layers have different thicknesses and bandgap characteristics. The outer layers are relatively thick and include a relatively low bandgap material, such as InGaN. The inner layer has a relatively lower bandgap material and is sufficiently thin to act as a quantum well delta layer, e.g., comprising approximately 6 .ANG. or less of InN. Such a quantum well structure advantageously extends the emission wavelength into the yellow/red spectral regime, and enhances spontaneous emission. The multi-layer quantum well active layer is sandwiched by barrier layers of high bandgap materials, such as GaN.},

  doi          = {},

  journal      = {},
number       = ,

  volume       = ,

  place        = {United States},

  year         = {2018},

  month        = {10}

}

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Title: Nitride based devices including a symmetrical quantum well active layer having a central low bandgap delta-layer

Abstract

Citation Formats

Unipolar light emitting devices based on III-nitride semiconductor superlattices patent, September 2002

Nitride based semiconductor light-emitting device patent, December 2005

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Semiconductor device having a nitride-based hetero-structure and method of manufacturing the same patent, February 2005

Analysis of InGaN-delta-InN quantum wells for light-emitting diodes journal, September 2010

Growths of staggered InGaN quantum wells light-emitting diodes emitting at 520–525 nm employing graded growth-temperature profile journal, August 2009

Chirped multi-well active region LED patent, January 2003

Efficient light emitting diodes and lasers patent, April 2005

1-2 ML thick InN-based quantum wells with InGaN barriers for blue-green light emitters journal, January 2009

Optical gain characteristics of staggered InGaN quantum wells lasers journal, June 2010

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Group III nitride LED with silicon carbide substrate patent, July 2006

Nitride semiconductor with active layer of quantum well structure with indium-containing nitride semiconductor patent-application, November 2007

Polarization engineering via staggered InGaN quantum wells for radiative efficiency enhancement of light emitting diodes journal, August 2007

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Optical gain in InGaN∕GaN quantum well structures with embedded AlGaN δ layer journal, January 2007

Bonding pad for gallium nitride-based light-emitting device patent, February 2006

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Polarization engineering via staggered InGaN quantum wells for radiative efficiency enhancement of light emitting diodes
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