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Title: Eliminating emissive sub-bandgap states in nanocrystals

Abstract

The size-dependent band-gap tunability and solution processability of nanocrystals (NCs) make them attractive candidates for optoelectronic applications. One factor that presently limits the device performance of NC thin films is sub-bandgap states, also referred to as trap states. Trap states can be controlled by surface treatment of the nanocrystals.

Inventors:
; ; ; ; ; ;
Issue Date:
Research Org.:
Massachusetts Institute of Technology, Cambridge, MA (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1490031
Patent Number(s):
10,109,760
Application Number:
15/095,001
Assignee:
Massachusetts Institute of Technology (Cambridge, MA)
DOE Contract Number:  
SC0001088
Resource Type:
Patent
Resource Relation:
Patent File Date: 2016 Apr 08
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Hwang, Gyuweon, Kim, Donghun, Cordero, Jose M., Wilson, Mark W. B., Chuang, Chia-Hao M., Grossman, Jeffrey C., and Bawendi, Moungi G. Eliminating emissive sub-bandgap states in nanocrystals. United States: N. p., 2018. Web.
Hwang, Gyuweon, Kim, Donghun, Cordero, Jose M., Wilson, Mark W. B., Chuang, Chia-Hao M., Grossman, Jeffrey C., & Bawendi, Moungi G. Eliminating emissive sub-bandgap states in nanocrystals. United States.
Hwang, Gyuweon, Kim, Donghun, Cordero, Jose M., Wilson, Mark W. B., Chuang, Chia-Hao M., Grossman, Jeffrey C., and Bawendi, Moungi G. Tue . "Eliminating emissive sub-bandgap states in nanocrystals". United States. https://www.osti.gov/servlets/purl/1490031.
@article{osti_1490031,
title = {Eliminating emissive sub-bandgap states in nanocrystals},
author = {Hwang, Gyuweon and Kim, Donghun and Cordero, Jose M. and Wilson, Mark W. B. and Chuang, Chia-Hao M. and Grossman, Jeffrey C. and Bawendi, Moungi G.},
abstractNote = {The size-dependent band-gap tunability and solution processability of nanocrystals (NCs) make them attractive candidates for optoelectronic applications. One factor that presently limits the device performance of NC thin films is sub-bandgap states, also referred to as trap states. Trap states can be controlled by surface treatment of the nanocrystals.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2018},
month = {10}
}

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Works referenced in this record:

Highly Effective Surface Passivation of PbSe Quantum Dots through Reaction with Molecular Chlorine
journal, November 2012

  • Bae, Wan Ki; Joo, Jin; Padilha, Lazaro A.
  • Journal of the American Chemical Society, Vol. 134, Issue 49
  • DOI: 10.1021/ja309783v