Eliminating emissive sub-bandgap states in nanocrystals

Title: Eliminating emissive sub-bandgap states in nanocrystals

Abstract

The size-dependent band-gap tunability and solution processability of nanocrystals (NCs) make them attractive candidates for optoelectronic applications. One factor that presently limits the device performance of NC thin films is sub-bandgap states, also referred to as trap states. Trap states can be controlled by surface treatment of the nanocrystals.

Inventors:: Hwang, Gyuweon; Kim, Donghun; Cordero, Jose M.; Wilson, Mark W. B.; Chuang, Chia-Hao M.; Grossman, Jeffrey C.; Bawendi, Moungi G.

Issue Date:: 2018-10-23

Research Org.:: Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States)

Sponsoring Org.:: USDOE

OSTI Identifier:: 1490031

Patent Number(s):: 10109760

Application Number:: 15/095,001

Assignee:: Massachusetts Institute of Technology (Cambridge, MA)

Patent Classifications (CPCs):: Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

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Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
Y02E10/50 - Photovoltaic [PV] energy

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
H01L51/502 - {comprising active inorganic nanostructures, e.g. luminescent quantum dots}
H01L31/0324 - {comprising only AIVBVI or AIIBIVCVI chalcogenide compounds, e.g. Pb Sn Te}
H01L51/42 - specially adapted for sensing infra-red radiation, light, electro-magnetic radiation of shorter wavelength or corpuscular radiation and adapted for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation {using organic materials as the active part, or using a combination of organic materials with other material as the active part
H01L31/036 - characterised by their crystalline structure or particular orientation of the crystalline planes
H01L31/18 - Processes or apparatus peculiar to the manufacture or treatment of these devices or of parts thereof
H01L31/0445 - including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
H01L31/035218 - {the quantum structure being quantum dots}

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DOE Contract Number:: SC0001088

Resource Type:: Patent

Resource Relation:: Patent File Date: 2016 Apr 08

Country of Publication:: United States

Language:: English

Subject:: 36 MATERIALS SCIENCE

Citation Formats


                    Hwang, Gyuweon, Kim, Donghun, Cordero, Jose M., Wilson, Mark W. B., Chuang, Chia-Hao M., Grossman, Jeffrey C., and Bawendi, Moungi G. Eliminating emissive sub-bandgap states in nanocrystals.  United States: N. p., 2018. 
        Web.

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                    Hwang, Gyuweon, Kim, Donghun, Cordero, Jose M., Wilson, Mark W. B., Chuang, Chia-Hao M., Grossman, Jeffrey C., & Bawendi, Moungi G. Eliminating emissive sub-bandgap states in nanocrystals.  United States.

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                    Hwang, Gyuweon, Kim, Donghun, Cordero, Jose M., Wilson, Mark W. B., Chuang, Chia-Hao M., Grossman, Jeffrey C., and Bawendi, Moungi G. Tue .  
        "Eliminating emissive sub-bandgap states in nanocrystals".  United States.  https://www.osti.gov/servlets/purl/1490031.

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@article{osti_1490031,

  title        = {Eliminating emissive sub-bandgap states in nanocrystals},

  author       = {Hwang, Gyuweon and Kim, Donghun and Cordero, Jose M. and Wilson, Mark W. B. and Chuang, Chia-Hao M. and Grossman, Jeffrey C. and Bawendi, Moungi G.},

  abstractNote = {The size-dependent band-gap tunability and solution processability of nanocrystals (NCs) make them attractive candidates for optoelectronic applications. One factor that presently limits the device performance of NC thin films is sub-bandgap states, also referred to as trap states. Trap states can be controlled by surface treatment of the nanocrystals.},

  doi          = {},

  journal      = {},
number       = ,

  volume       = ,

  place        = {United States},

  year         = {2018},

  month        = {10}

}

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Works referenced in this record:

Octapod Shaped Nanocrystals and Use Thereof
patent-application, February 2013

Manna, Liberato; Dorfs, Dirk; Miszta, Karol
US Patent Application 13/196123; 20130032767
URL: http://appft.uspto.gov/netacgi/nph-Parser?Sect1=PTO1&Sect2=HITOFF&d=PG01&p=1&u=%2Fnetahtml%2FPTO%2Fsrchnum.html&r=1&f=G&l=50&s1=%2220130032767%22.PGNR.&OS=DN/20130032767&RS=DN/20130032767

Highly Effective Surface Passivation of PbSe Quantum Dots through Reaction with Molecular Chlorine
journal, November 2012

Bae, Wan Ki; Joo, Jin; Padilha, Lazaro A.
Journal of the American Chemical Society, Vol. 134, Issue 49
https://doi.org/10.1021/ja309783v

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Title: Eliminating emissive sub-bandgap states in nanocrystals

Abstract

Citation Formats

Octapod Shaped Nanocrystals and Use Thereof patent-application, February 2013

Highly Effective Surface Passivation of PbSe Quantum Dots through Reaction with Molecular Chlorine journal, November 2012

Octapod Shaped Nanocrystals and Use Thereof
patent-application, February 2013

Highly Effective Surface Passivation of PbSe Quantum Dots through Reaction with Molecular Chlorine
journal, November 2012