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Title: Eliminating emissive sub-bandgap states in nanocrystals

The size-dependent band-gap tunability and solution processability of nanocrystals (NCs) make them attractive candidates for optoelectronic applications. One factor that presently limits the device performance of NC thin films is sub-bandgap states, also referred to as trap states. Trap states can be controlled by surface treatment of the nanocrystals.
Inventors:
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Issue Date:
OSTI Identifier:
1490031
Assignee:
Massachusetts Institute of Technology (Cambridge, MA) CHO
Patent Number(s):
10,109,760
Application Number:
15/095,001
Contract Number:
SC0001088
Resource Relation:
Patent File Date: 2016 Apr 08
Research Org:
Massachusetts Institute of Technology, Cambridge, MA (United States)
Sponsoring Org:
USDOE
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE