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Title: Solution growth of single-crystal perovskite structures

A method for growing single-crystal perovskite structures comprises immersing a film of a metal precursor compound on a surface of a substrate, the metal precursor compound comprising a metal ion B, in a solution comprising a cation precursor compound, the cation precursor compound comprising a cation ion A and an anion X, at a concentration of the cation precursor compound, a growth time, and a growth temperature sufficient to dissolve the film to release the metal ion B to form a complex with the anion X and sufficient to induce recrystallization of the complex with the cation ion A to form a plurality of single-crystal perovskite structures composed of A, B and X. The single-crystal perovskite structures, devices incorporating the same, and methods of using the devices are also provided.
Inventors:
;
Issue Date:
OSTI Identifier:
1483380
Assignee:
Wisconsin Alumni Research Foundation (Madison, WI) CHO
Patent Number(s):
10,077,507
Application Number:
14/954,442
Contract Number:
SC0002162
Resource Relation:
Patent File Date: 2015 Nov 30
Research Org:
Wisconsin Alumni Research Foundation, Madison, WI (United States)
Sponsoring Org:
USDOE
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Works referenced in this record:

Synthesis and Characterization of Organic?Inorganic Perovskite Thin Films Prepared Using a Versatile Two-Step Dipping Technique
journal, January 1998
  • Liang, Kangning; Mitzi, David B.; Prikas, Michael T.
  • Chemistry of Materials, Vol. 10, Issue 1, p. 403-411
  • DOI: 10.1021/cm970568f